A vertical memory device includes a plurality of stacked structures, at least one inter-structure layer, and a channel structure. The plurality of stacked structures comprises a plurality of gate electrodes and a plurality of insulation film patterns that are alternately and repeatedly stacked on a substrate. At least one inter-structure layer is positioned between the two stacked structures adjacent to each other from among the plurality of stacked structures. A channel structure penetrates the plurality of stacked structures and the at least one inter-structure layer, the channel structure extending in the first direction, the channel structure being connected to the substrate.

According to principles of the disclosure as explained herein, selected leads are electrically connected through metal strips to the lead frame until the end of the manufacturing process. The lead frame is grounded through the manufacturing process to prevent any ESD event from causing damage to the protected leads. In the final singulation step, the leads are electrically isolated from each other and from the lead frame, thus maintaining protection from a potential ESD event up until the final package singulation step.

The present disclosure relates to semiconductor structures and, more particularly, to an identification system, method of manufacture and method of use. The structure includes at least one waveguide structure and at least one damaged region positioned in a unique pattern on the at least one waveguide structure.

According to principles of the disclosure as explained herein, selected leads are electrically connected through metal strips to the lead frame until the end of the manufacturing process. The lead frame is grounded through the manufacturing process to prevent any ESD event from causing damage to the protected leads. In the final singulation step, the leads are electrically isolated from each other and from the lead frame, thus maintaining protection from a potential ESD event up until the final package singulation step.

A method includes forming a molding compound molding a lower portion of an electrical connector of a wafer therein. The molding compound is at a front surface of the wafer. The molding compound covers a center region of the wafer, and leaves an edge ring of the wafer not covered. An opening is formed to extend from the front surface of the wafer into the wafer, wherein the opening is in the edge ring of the wafer. A backside grinding is performed on the wafer until the opening is revealed through a back surface of the wafer. The method further includes determining a position of a scribe line of the wafer using the opening as an alignment mark, and sawing the wafer from a backside of the wafer by sawing through the scribe line.

A method includes forming a molding compound molding a lower portion of an electrical connector of a wafer therein. The molding compound is at a front surface of the wafer. The molding compound covers a center region of the wafer, and leaves an edge ring of the wafer not covered. An opening is formed to extend from the front surface of the wafer into the wafer, wherein the opening is in the edge ring of the wafer. A backside grinding is performed on the wafer until the opening is revealed through a back surface of the wafer. The method further includes determining a position of a scribe line of the wafer using the opening as an alignment mark, and sawing the wafer from a backside of the wafer by sawing through the scribe line.

Provided is a thermosetting sheet for sealing which is used to seal an electronic device. One surface of the sheet has a surface roughness (Ra) of 3 m or less before the sheet is cured.

Provided is a thermosetting sheet for sealing which is used to seal an electronic device. One surface of the sheet has a surface roughness (Ra) of 3 m or less before the sheet is cured.

A universal substrate for assembling ball grid array (BGA) type integrated circuit packages has a non-conducting matrix, an array of conducting vias extending between top and bottom surfaces of the matrix, and one or more instances of each of two or more different types of fiducial pairs on the top surface of the matrix. Each instance of each different fiducial pair indicates a location of a different via sub-array of the substrate for a different BGA package of a particular package size. The same substrate can be used to assemble BGA packages of different size, thereby avoiding having to design a different substrate for each different BGA package size.

A method is provided for extracting information of interest from a measurement signal having a periodic interference pattern, which includes steps (i) of generating a filtering function representing the frequency components of the interference pattern, by implementing an analysis of an amplitude spectrum of the measurement signal based on morphological criteria, (ii) of applying the filtering function to the measurement signal so as to generate an interference signal constituted essentially by the interference pattern, and (iii) of calculating a filtered signal by carrying out a difference between the measurement signal and the interference signal.

The invention also relates to a device implementing the method.