A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

A power device for a rectifier includes a first terminal and a second terminal for connecting an external circuit, and a circuit system located between the first terminal and the second terminal. The circuit system is electrically connected to the first terminal and the second terminal. The circuit system includes a pre-molded chip and a control device. The pre-molded chip includes a transistor and a first encapsulant for encapsulating the transistor, wherein the transistor has a first electrode, a second electrode, and a third electrode. The first terminal, the second terminal and the control device are respectively electrically connected to the first electrode, the second electrode and the third electrode of the transistor.

The present application discloses a display apparatus having a driver integrated circuit (IC) bonding area for bonding a plurality of signal lines with a driver IC. The display apparatus includes a conductive line layer in a peripheral area of the display apparatus, configured to discharge electrostatic charge in the driver IC bonding area.

A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

A method includes providing a carrier, depositing a die attach material on the carrier, and arranging a semiconductor die on the die attach material, wherein a main surface of the semiconductor die facing the die attach material at least partly contacts the die attach material, wherein immediately after arranging the semiconductor die on the die attach material, a first maximum extension of the die attach material over edges of the main surface is less than about 100 micrometers.

A power semiconductor device includes a planar rectifying element, a base electrode, a first solder layer, a lead electrode, a second solder layer, and first and second sealing portions. The base electrode is electrically connected to the rectifying element via the first solder layer formed on a first surface of the rectifying element. The lead electrode is electrically connected to the rectifying element via the second solder layer formed on a second surface of the rectifying element. The first sealing portion is formed of a first resin and provided in a recess; the recess is formed by the first surface of the rectifying element and the first solder layer or by the second surface of the rectifying element and the second solder layer. The second sealing portion is formed of a second resin and separately from the first sealing portion to cover an outer surface of the first sealing portion.

A semiconductor device includes a carrier, a semiconductor die and a die attach material arranged between the carrier and the semiconductor die. A fillet height of the die attach material is less than about 95% of a height of the semiconductor die. A maximum extension of the die attach material over edges of a main surface of the semiconductor die facing the die attach material is less than about 200 micrometers.

The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.

Provided are a semiconductor device realized easily at low cost without requiring a complicated manufacturing process, and an alternator using the same. The semiconductor device includes a base having a base seat, a lead having a lead header, and an electronic circuit body, wherein the electronic circuit body is arranged between the base and the lead; the base seat is connected to a first surface of the electronic circuit body; the lead header is connected to a second surface of the electronic circuit body; the electronic circuit body is integrally covered by resin, including a transistor circuit chip having a switching element, a control circuit chip for controlling the switching element, a drain frame, and a source frame; either one of the drain frame and the source frame, and the base are connected; and the other one of the drain frame and the source frame, and the lead are connected.

A rectifying device includes a power transistor, a gate control circuit and a capacitor structure arranged on a single semiconductor die. The power transistor includes a source or emitter terminal connected to a first terminal of the rectifying device, a drain or collector terminal connected to a second terminal of the rectifying device, and a gate. The gate control circuit is operable to control a gate voltage at the gate of the power transistor based on at least one parameter relating to at least one of a voltage and a current between the first terminal and the second terminal.