An electronic module, and method for making same, includes free-formed, self-supported interconnect pillars that electrically connect cover electronic components disposed on a cover substrate with base electronic components disposed on a base substrate. The free-formed, self-supported interconnect pillars may extend vertically in a straight path between the cover electronic components and the base electronic components. The free-formed, self-supported interconnect pillars may be formed from an electrically conductive filament provided by an additive manufacturing process. By free-forming the self-supported interconnect pillars directly on the electronic components, the flexibility of electronic module design may be enhanced, while reducing the complexity and cost to manufacture such electronic modules.

Aspects of the present disclosure include integrated circuit (IC) structures with angled interconnect elements. An IC structure according to the present disclosure can include: an IC chip interconnect surface including a radially inner region positioned within a radially outer region; and a plurality of conductive pillars extending outward from the radially inner region of the IC chip interconnect surface, relative to a radial centerline axis of the radially inner region of the IC chip interconnect surface, wherein the radially inner region of the IC chip interconnect surface is free of conductive pillars thereon.

The present invention relates generally to compositions for use in biological and chemical separations, as well as other applications. More specifically, the present invention relates to hybrid felts fabricated from electrospun nanofibers with high permeance and high capacity. Such hybrid felts utilize derivatized cellulose, and at least one non-cellulose-based polymer that may be removed from the felt by subjecting it to moderately elevated temperatures and/or solvents capable of dissolving the non-cellulose-based polymer to leave behind a porous nanofiber felt having more uniform pore sizes and other enhanced properties when compared to single component nanofiber felts.

The present invention relates generally to compositions for use in biological and chemical separations, as well as other applications. More specifically, the present invention relates to hybrid felts fabricated from electrospun nanofibers with high permeance and high capacity. Such hybrid felts utilize derivatized cellulose, and at least one non-cellulose-based polymer that may be removed from the felt by subjecting it to moderately elevated temperatures and/or solvents capable of dissolving the non-cellulose-based polymer to leave behind a porous nanofiber felt having more uniform pore sizes and other enhanced properties when compared to single component nanofiber felts.

An electronic module, and method for making same, includes free-formed, self-supported interconnect pillars that electrically connect cover electronic components disposed on a cover substrate with base electronic components disposed on a base substrate. The free-formed, self-supported interconnect pillars may extend vertically in a straight path between the cover electronic components and the base electronic components. The free-formed, self-supported interconnect pillars may be formed from an electrically conductive filament provided by an additive manufacturing process. By free-forming the self-supported interconnect pillars directly on the electronic components, the flexibility of electronic module design may be enhanced, while reducing the complexity and cost to manufacture such electronic modules.

A power semiconductor device includes: a die carrier; a power semiconductor die arranged on the die carrier and having a first side and an opposite second side, the first side facing away from the die carrier and including a first power terminal having a Cu layer and the second side including a second power terminal electrically coupled to the die carrier; a contact clip electrically coupled to the Cu layer of the first power terminal by a solder joint; and a patterned cover layer deposited on the first side of the power semiconductor die. The cover layer surrounds the first power terminal on at least one lateral side. The cover layer is arranged over the Cu layer. The cover layer consists of Al.sub.2O.sub.3 or SiO.sub.2.

In a semiconductor device according to the present disclosure, one end and the other end of a plurality of insulation covering wires are joined to a connection region in an upper electrode of a DBC substrate over a semiconductor element while an insulation covering portion in a center region has contact with a surface of the semiconductor element. The plurality of insulation covering wires are provided along an X direction in the same manner as the plurality of metal wires. The plurality of insulation covering wires are provided with no loosening, thus have press force of pressing the semiconductor element in a direction of the solder joint portion.