A system and method for reworking a flip chip includes use of a mill to remove an old flip chip, and a pick-and-place device for putting a new flip chip in place at the same location. The process may be automated, with the removal and the placement occurring sequentially without need for operator intervention. Other devices and processes may be part of the system/machine and process, for example cleaning following the milling, fluxing prior to the placement, and heating to cause solder reflow, to secure the new flip chip in place. Underfill may be employed to make for a more mechanically robust mounting of the new flip chip.

A semiconductor device manufacturing method includes a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with light and thereby separating the semiconductor member from the supporting member. The temporary fixation material layer has a light absorbing layer that generates heat upon absorbing light and a resin cured product layer including a cured product of a curable resin component. The curable resin component includes a hydrocarbon resin, and a storage modulus at 25° C. for the cured product of the curable resin component is 5 to 100 MPa.

Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 μm to about 100 μm, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

According to one embodiment, a manufacturing apparatus includes: a storage configured to store a work; a transfer arm configured to transfer the work; a hot bath configured to store a liquid; a mounting table configured to mount the work in the hot bath; and an upper arm configured to apply pressure to the work mounted on the mounting table.

A solder removal apparatus is provided. The solder removal apparatus comprises a plurality of solder-interfacing protrusions extending from a body by a length. Each of the plurality of solder-interfacing protrusions is configured to remove a corresponding one of a plurality of solder features from a semiconductor device, where each of the plurality of solder features has a height and an amount of solder material.

A method for manufacturing a semiconductor package includes: (a) providing a substrate structure, wherein the substrate structure includes a chip attach area, a bottom area opposite to the chip attach area, a lower side rail surrounding the bottom area, a first lower structure and a second lower structure, wherein the first lower structure is disposed in a first lower region of the lower side rail, and a second lower occupancy ratio is greater than a first lower occupancy ratio; (b) attaching at least one semiconductor chip to the chip attach area; and (c) forming an encapsulant to cover the at least one semiconductor chip.

Disclosed is a method for testing a semiconductor element. The method comprises forming at least one redistribution layer on a chip, utilizing the at least one redistribution layer to test an array of semiconductor elements on the chip, and removing the at least one redistribution layer from the chip, wherein the length of each semiconductor element is between 2-150 μm and the width of each semiconductor element is between 2-150 μm.

Provided are a micro light emitting diodes and a method of transferring the same. The method includes providing an array substrate with the micro light emitting diodes; adhering abnormal micro light emitting diodes of the array substrate on a first carrying plate; adhering the abnormal micro light emitting diodes on the first carrying plate to a laser deformation glue layer of a second carrying plate; irradiating the laser deformation glue layer by a laser to flip the abnormal micro light emitting diodes; transferring the abnormal micro light emitting diodes from the second carrying plate to a third carrying plate; and transferring again to the array substrate.

Provided are a micro light emitting diodes and a method of transferring the same. The method includes providing an array substrate with the micro light emitting diodes; adhering abnormal micro light emitting diodes of the array substrate on a first carrying plate; adhering the abnormal micro light emitting diodes on the first carrying plate to a laser deformation glue layer of a second carrying plate; irradiating the laser deformation glue layer by a laser to flip the abnormal micro light emitting diodes; transferring the abnormal micro light emitting diodes from the second carrying plate to a third carrying plate; and transferring again to the array substrate.

A method for manufacturing a semiconductor package includes: (a) providing a substrate structure, wherein the substrate structure includes a chip attach area, a bottom area opposite to the chip attach area, a lower side rail surrounding the bottom area, a first lower structure and a second lower structure, wherein the first lower structure is disposed in a first lower region of the lower side rail, and a second lower occupancy ratio is greater than a first lower occupancy ratio; (b) attaching at least one semiconductor chip to the chip attach area; and (c) forming an encapsulant to cover the at least one semiconductor chip.