The light emitting apparatus includes a light emitting device including a first base at which a laminate is provided and a second base at which the light emitting device is provided. The laminate includes a first semiconductor layer, a second semiconductor layer of a conductivity type different from the conductivity type of the first semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of emitting light when current is injected into the light emitting layer. The laminate includes a plurality of columnar sections. Connecting member is so provided between the adjacent columnar sections as to be connected to the adjacent columnar sections. The laminate is connected to the second base on the side opposite the first base.

A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

A method for manufacturing an electronic device includes providing a substrate, forming a plurality of connecting pads and a plurality of conductive portions partially overlapped by the plurality of connecting pads on a surface of the substrate; forming a plurality of conductive lines on the substrate, wherein the plurality of conductive lines are electrically connected to the plurality of conductive portions; and bonding a plurality of light emitting units to the plurality of connecting pads. The method may further includes identifying a defective light emitting unit from the plurality of light emitting units; removing the defective light emitting unit from a corresponding position on the substrate; and bonding-another light emitting unit to the corresponding position.

The present application relates to the field of semiconductor, especially the Light-Emitting Diode (LED) and a manufacturing method thereof. In some examples, by etching the channel between adjacent light-emitting units, making the high reflection layer at the bottom of the channel, and producing interference fringes through the high reflection layer, and the side of the LED is exposed by using the interference fringes, thereby forming the structure of the groove and the protrusion on the side of the LED. Further, the width of the bottom of the groove can be larger than the width of the opening, and a silicon dioxide layer can be provided on the surfaces of the protrusion structures, which can further improve the luminous efficiency of the LED.

A support structure for a light-emitting diode utilizes the configuration of a sacrifice structure to achieve safe separation of a light-emitting diode from a carrier substrate. Specifically, when an external force is applied on the light-emitting diode or the carrier substrate, a breaking layer of the sacrifice structure is the first layer to be broken, so that the light-emitting diode and carrier substrate will become separated from each other.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The electron blocking layer is located between the active region and the p-type contact layer. In an embodiment, the electron blocking layer can include a plurality of sublayers that vary in composition.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

The present invention relates to a micro LED transfer head and a system using the same for transferring a micro LED, the micro LED transfer head and the system being capable of increasing the efficiency of transferring micro LEDs with vacuum-suction by the micro LED transfer head, removing a factor that interferes with a grip force of the micro LED transfer head gripping the micro LEDs to improve the transfer efficiency of the micro LED transfer head, and preventing foreign substances from entering into a space where the micro LED transfer head is cleaned while cleaning a grip surface of the micro LED transfer head to improve the efficiency of cleaning the grip surface of the micro LED transfer head.

A method for manufacturing an electronic device comprises providing a substrate, applying a first bonding material on the substrate, bonding a plurality of light emitting units to the substrate through the first bonding material, identifying a defective light emitting unit from the plurality of light emitting units, removing the defective light emitting unit from a corresponding position on the substrate, applying a second bonding material, and bonding a repairing light emitting unit to the corresponding position through the second bonding material.