An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

The light emitting apparatus includes a light emitting device including a first base at which a laminate is provided and a second base at which the light emitting device is provided. The laminate includes a first semiconductor layer, a second semiconductor layer of a conductivity type different from the conductivity type of the first semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of emitting light when current is injected into the light emitting layer. The laminate includes a plurality of columnar sections. Connecting member is so provided between the adjacent columnar sections as to be connected to the adjacent columnar sections. The laminate is connected to the second base on the side opposite the first base.

A light emitting diode is provided. The light emitting diode includes a substrate; a light emitting structure, and a protective layer. The light emitting structure is disposed on the substrate, and includes a first semiconductor layer, an active layer, and a second semiconductor layer. The protective layer is formed on the light emitting structure, and has a Young's modulus smaller than that of the light emitting structure.

A method for manufacturing an electronic device comprises providing a substrate, applying a first bonding material on the substrate, bonding a plurality of light emitting units to the substrate through the first bonding material, identifying a defective light emitting unit from the plurality of light emitting units, removing the defective light emitting unit from a corresponding position on the substrate, applying a second bonding material, and bonding a repairing light emitting unit to the corresponding position through the second bonding material.

A fluidic assembly method is provided that uses a counterbore pocket structure. The method is based upon the use of a substrate with a plurality of counterbore pocket structures formed in the top surface, with each counterbore pocket structure having a through-hole to the substrate bottom surface. The method flows an ink with a plurality of objects over the substrate top surface. As noted above, the objects may be micro-objects in the shape of a disk. For example, the substrate may be a transparent substrate and the disks may be light emitting diode (LED) disks. Simultaneously, a suction pressure is created at the substrate bottom surface. In response to the suction pressure from the through-holes, the objects are drawn into the counterbore pocket structures. Also provided is a related fluidic substrate assembly.

A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

A support structure for a light-emitting diode utilizes the configuration of a sacrifice structure to achieve safe separation of a light-emitting diode from a carrier substrate. Specifically, when an external force is applied on the light-emitting diode or the carrier substrate, a breaking layer of the sacrifice structure is the first layer to be broken, so that the light-emitting diode and carrier substrate will become separated from each other.

A multi-wavelength light-emitting device configured to emit light of a first wavelength, light of a second wavelength, and a third wavelength, includes a substrate, a first type semiconductor layer provided on the substrate, an active layer provided on the first type semiconductor layer, a second type semiconductor layer provided on the active layer, and an electrode provided on the second type semiconductor layer. The active layer includes a first active area configured to emit the light of the first wavelength, a second active area configured to emit the light of the second wavelength, and a third active area configured to emit the light of the third wavelength.

An electronic device includes a substrate, a plurality of connecting pads, a plurality of conductive portions overlapped with the plurality of connecting pads, a plurality of conductive lines, an insulating layer, and an integrated chip. At least one of the conductive lines is overlapped with at least one of the conductive portions, and at least one of the connecting pads is electrically connected to the at least one of the conductive lines through the at least one of the conductive portions. The insulating layer is disposed between the at least one of the connecting pads and the at least one of the conductive portions, wherein the insulating layer directly contacts a top surface and a lateral surface of the at least one of the conductive portions. The integrated chip is electrically connected to the at least one of the conductive lines.

The present invention relates to a micro LED transfer head and a system using the same for transferring a micro LED, the micro LED transfer head and the system being capable of increasing the efficiency of transferring micro LEDs with vacuum-suction by the micro LED transfer head, removing a factor that interferes with a grip force of the micro LED transfer head gripping the micro LEDs to improve the transfer efficiency of the micro LED transfer head, and preventing foreign substances from entering into a space where the micro LED transfer head is cleaned while cleaning a grip surface of the micro LED transfer head to improve the efficiency of cleaning the grip surface of the micro LED transfer head.