A semiconductor diode structure has one or more light-emitting active layers and a redirection layer on the back surface that includes one or more of an array of nano-antennae, a partial photonic bandgap structure, a photonic crystal, or an array of meta-atoms or meta-molecules, and exhibits non-specular internal reflective redirection of output light incident thereon within the diode structure. One or both of the front or back surfaces exhibit position-dependent redirection, reflection, or transmission of the output light, including one or both of (i) position-dependent internal reflective redirection of output light incident on the back-surface or (ii) position-dependent internal reflective redirection, or position-dependent transmissive redirection, of output light incident on a front-surface layer or coating. Position dependence of luminance of output light exiting the diode structure can differ from position dependence of emission from the active layer. With uniform emission across the active layer, output light can exhibit position-dependent luminance.

Micro light-emitting diode displays having colloidal or graded index quantum dot films and methods of fabricating micro light-emitting diode displays having colloidal or graded index quantum dot films are described. In an example, a micro light emitting diode pixel structure includes a plurality of micro light emitting diode devices in a dielectric layer. A transparent conducting oxide layer is above the dielectric layer. A material layer is on the transparent conducting oxide layer, the material layer having a portion with a hydrophilic surface and a portion with a hydrophobic surface, the hydrophilic surface over one of the plurality of micro light emitting diode devices. A color conversion film is on the hydrophilic surface of the material layer and over the one of the plurality of micro light emitting diode devices.

A light-emitting unit includes: a wiring board; light-emitting elements on the wiring board; a light reflecting member on the wiring board, the light reflecting member covering a lateral surface of each of the light-emitting elements; wavelength conversion layers each provided on or above an emission surface of a corresponding one of the plurality of light-emitting elements; light reflecting layers on the wavelength conversion layers, respectively; and a protecting layer configured to transmit light and provided on the light reflecting member. The light-transmitting protecting layer covers at least a lateral surface of the wavelength conversion layers and at least a lateral surfaces of the light reflecting layers. An upper surface of the protecting layer has a first recess in a region where the plurality of light reflecting layers are not present in a top view. The first recess includes at least one concave surface.

The invention provides a solution based process based on high molecular weight block copolymer (BCP) nanolithography for fabrication of periodic structures on large areas of optical surfaces. In one embodiment there is provided method of fabricating a nano-patterned surface for application in a photonic, optical or other related device, said method comprising the steps of: providing a substrate material; depositing a block copolymer (BCP) material on the substrate material; and phase separating the BCPs using at least one solvent selected to facilitate polymer chain mobilisation and lead to phase separation to fabricate said nano-patterned surface; wherein the nano-patterned surface comprises an ordered array of structures and having a domain or diameter of 100 nm or greater. A new photonic device and optical device is also described.

The light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and is same in conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part, an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, and a diametrical size in a bottom of the recessed part is smaller than a diametrical size in the opening of the recessed part.

Disclosed herein is a multiple light emitter device which inactivates microorganisms. The device includes at least two light emitters and at least one light-converting material arranged to convert at least a portion of light from the light emitters. Any unconverted light emitted from the light emitters and converted light emitted from the at least one light-converting material mixes to form a combined light, the combined light being white. In one aspect, the light emitters include at least one blue light emitter and at least one violet light emitter. In another aspect, the light emitters include one blue light emitter and one emitter within the range of approximately yellow to infrared light.

An optoelectronic device includes a glass carrier, at least one light-scattering layer applied to the glass carrier, and at least one surface-emitting component in a chip size package with an emission surface and a surface facing away from the emission surface having a first and a second contact pad. The emission surface is arranged on the at least one light-scattering layer by way of an adhesive. At least one contact line contacts the second contact pad of the at least one surface-emitting component and extends along a side surface of the at least one surface-emitting component adjacent to the second contact pad in a direction of the glass carrier. A light-shaping structure is arranged on a surface of the glass carrier facing away from the surface-emitting component.

A device configured for a treatment with a laser, including a support transparent for the laser and at least one optoelectronic circuit including at least one optoelectronic component having a three-dimensional semiconductor element covered with an active layer, the three-dimensional semiconductor element including a base bonded to the support, the device including a region absorbing for the laser resting on the support and surrounding the base.

A light-emitting device includes a substrate, a laminated structure provided at the substrate, and a conductive layer provided at the laminated structure and configured to apply an electric current to the laminated structure. The laminated structure is provided between the substrate and the conductive layer, and includes a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type different from the first conductive type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The conductive layer includes a plurality of wire portions extending in a direction orthogonal to a lamination direction of the laminated structure, and is configured to polarize light generated at the light-emitting layer, and an electric current is applied to the light-emitting layer via the plurality of wire portions.

A light-emitting device is provided, including a light-emitting unit and an optical layer. The light-emitting unit includes a light-emitting chip and an encapsulation disposed thereon. The optical layer is disposed on the light-emitting unit, the optical layer having a first region overlapping the light-emitting chip in a top view direction of the light-emitting device and a second region not overlapping the light-emitting chip in the top view direction of the light-emitting device, wherein the transmittance of the first region is less than the transmittance of the second region.