In an embodiment a semiconductor light source includes an optoelectronic semiconductor chip configured to emit radiation and a cover body arranged on the optoelectronic semiconductor chip, wherein the cover body comprises a light-transmissive base body, wherein the light-transmissive base body comprises a plurality of recesses with inclined side faces, the recesses start at an emission side of the light-transmissive base body remote from the optoelectronic semiconductor chip and narrow towards the optoelectronic semiconductor chip, wherein a mirror coating is provided at top regions of the recesses next to the emission side, and wherein bottom regions of the recesses closest to the optoelectronic semiconductor chip are free of the mirror coating.

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

According to the present invention, in a display device comprising a substrate and semiconductor light emitting devices mounted on the substrate, the semiconductor light emitting devices are characterized in that the semiconductor light emitting devices include a protective layer and a pattern layer having one surface in contact with the protective layer, another surface in contact with the substrate, and a concave-convex structure on another surface, through such a structure, it is possible to minimize the phenomenon that the semiconductor light emitting device is adsorbed to the surface of the substrate other than the cell.

A display apparatus includes a first conductive pattern layer, a first insulating pattern layer, a second conductive pattern layer, a second insulating pattern layer, pixel structures, and a light-absorbing pattern layer. The first insulating pattern layer is disposed on the first conductive pattern layer and has a first opening. The second conductive pattern layer is disposed on the first insulating pattern layer and has light-shielding conductive patterns arranged periodically. The second insulating pattern layer is disposed on the second conductive pattern layer and has a second opening overlapped with the first opening. The light-absorbing pattern layer covers at least a first sidewall defining the first opening and a second sidewall defining the second opening and separates the light-shielding conductive patterns of the second conductive pattern layer. The light-absorbing pattern layer has a light-transmitting opening overlapped with the first opening and the second opening.

The invention relates to a method for producing a light-emitting diode comprising a semiconductor stack formed of a first layer 11, of an active layer 13, and of an extraction layer 6. It comprises a step of determining a distance h.sub.1s between emitting dipoles μ.sub.1 that are located in the active layer 13 and the extraction layer 6, such that the emitting dipoles μ.sub.1 of vertical orientation have in particular a lifetime longer than that of the emitting dipoles of horizontal orientation.

Lumiphoric materials and corresponding light-emitting devices, and more particularly localized surface plasmon resonance for enhanced photoluminescence of lumiphoric materials are disclosed. Plasmonic materials are disclosed that are configured to induce localized surface plasmon resonance and excite a corresponding localized surface plasmon enhanced electric field in response to incident light. An increase in photoluminescence of lumiphoric materials may be realized when the lumiphoric materials are arranged within the localized surface plasmon enhanced electric field. Plasmonic materials are disclosed that include various arrangements of nanoparticles and/or patterned structures with corresponding dielectric materials that are collectively arranged in close proximity to lumiphoric materials.

A device that includes a metal(III)-polar III-nitride substrate having a first surface opposite a second surface, a tunnel junction formed on one of the first surface or a buffer layer disposed on the first surface, a p-type III-nitride layer formed directly on the tunnel junction, and a number of material layers; a first material layer formed on the p-type III-nitride layer, each subsequent layer disposed on a preceding layer, where one layer from the number of material layers is patterned into a structure, that one layer being a III-nitride layer. Methods for forming the device are also disclosed.

A structure and method of micro-LEDs are described. The micro-LEDs have a GaN semiconductor structure containing a multi-quantum well active region configured to emit light of a visible wavelength range and a structure to increase specular reflection of ambient light by proving scattering at one or more interfaces of the micro-LEDs. The interfaces include the air-encapsulant interface, semiconductor-encapsulant interface, or semiconductor-contact interface.

Disclosed herein are a light source for a display system and methods of fabricating the light source. The light source includes a backplane wafer including a first bonding layer that includes an array of pixel contact pads in a first dielectric layer; a second bonding layer including an array of small metal contact pads in a second dielectric layer; and an array of mesa structures on the second bonding layer and configured to emit light. The second dielectric layer is bonded to the first dielectric layer such that each pixel contact pad of the array of pixel contact pads is in contact with two or more small metal contact pads that are electrically coupled to a same mesa structure of the array of mesa structures.

A light emitting device includes a backplane, first, second and third light emitting diodes located on the backplane, a first patterned metamaterial lens containing first nanostructures located over the first light emitting diode, a second patterned metamaterial lens containing second nanostructures located over the second light emitting diode, and a third patterned metamaterial lens containing third nanostructures located over the light emitting diode. A configuration of the first nanostructures differs from a configuration of the second nanostructures, and a configuration of the third nanostructures differs from the configurations of the first and the second nanostructures.