An optoelectronic arrangement having a radiation conversion element and a method for producing a radiation conversion element are disclosed. In an embodiment, an optoelectronic arrangement includes a semiconductor chip having an active region configured to generate radiation, a radiation conversion element arranged downstream of the semiconductor chip in an emission direction and a reflective polarization element arranged downstream of the radiation conversion element in the emission direction. The radiation conversion element has a plurality of conversion elements, each of which has an axis of symmetry, the spatial orientation of the axes of symmetry has a preferred direction and a radiation emitted by the radiation conversion element has a preferred polarization. The reflective polarization element largely allows radiation with the preferred polarization to pass through and largely reflects radiation polarized perpendicularly to the preferred polarization.

A light-emitting device, including a mount substrate, at least one light emitting element, a first light transparent member, a second light transparent member and a covering member, is disclosed. The at least one light emitting element is disposed on the mount substrate in a flip-chip manner. The first light transparent member is configured to receive the incident light emitting from the light emitting element, wherein the first light transparent member is formed of an inorganic substance and an inorganic phosphor, and includes a top surface and a first side surface contiguous to the top surface. The second light transparent member is disposed on the top surface of the first light transparent member and is formed of the inorganic substance and contains no the inorganic phosphor, and includes an externally exposed light emission surface and a second side surface contiguous to the externally exposed light emission surface. The covering member comprises a light reflective material and covers at least the first side surface of the first light transparent member and at least the second side surface of the second light transparent member.

Solid-state lighting devices and more particularly light-emitting devices including light-emitting diodes (LEDs) with light-altering material arrangements are disclosed. LED devices may include light-altering materials that are provided around peripheral sidewalls of LED chips without the need for a supporting submount or lead frame. The light-altering materials may be provided with reduced thicknesses along peripheral sidewalls of LED chips. An exemplary LED device as disclosed herein may be configured with a footprint that is close to a footprint of the LED chip within the LED device while also providing an amount of light-altering material around peripheral edges of the LED chip to reduce cross-talk. Accordingly, such LED devices may be well suited for use in applications where LED devices form closely-spaced LED arrays. Fabrication techniques are disclosed that include laminating a preformed sheet of light-altering material on one or more surfaces of the LED chip.

The present invention relates to a quantum dot composite and a photoelectric device comprising the same, and more particularly, to a quantum dot composite having excellent optical characteristics, thereby improving the light efficiency of a photoelectric device, and a photoelectric device comprising the same. To this end, the present invention provides a quantum dot composite and a photoelectric device comprising the same, the quantum dot composite comprising: a matrix layer; a plurality of quantum dots dispersed inside the matrix layer; and a plurality of scattering particles dispersed inside the matrix layer in a manner of being disposed between the plurality of quantum dots, wherein the scattering particles have a hollow formed therein, thereby showing multiple refractive indices.

An LED light bulb comprising a lamp housing, a bulb base, connected to the lamp housing, a stem connected to the bulb base and located in the lamp housing; an LED filament, disposed in the lamp housing, where points of the LED filament in an xyz coordinates are defined as x, y, and z, an x-y plane of the xyz coordinates is perpendicular to the height direction of the LED light bulb, an z-axis of xyz coordinates is parallel with the stem, and the projection of the LED filament on the x-y plane, y-z plane and x-z plane respectively has a length L1, L2 and L3, and the length L1, the length L2, and the length L3 are substantially in a ratio of 1:(0.5 to 1):(0.6 to 0.9).

The invention relates to a method for manufacturing a transmitter device (10) comprising the steps of: providing of a substrate (70) made of a semiconductor material having a first face (85) defining the substrate (70) in a direction (N) normal to the first face (85), implanting, through the first face (85), atoms capable of forming a weakened portion in the substrate, the substrate (70) further comprising a surface portion (92) and an internal portion (95), the weakened portion (90) separating the surface portion (92) from the internal portion (95) in the normal direction (N), forming, on the first face (85), a light-emitting diode (20), bonding a face (150) of the diode (20) to a second face (155) of a support (15), and breaking the weakened portion (90) in order to separate the surface portion (92) from the internal portion (95).

A display device may include: a substrate; first and second electrode on the substrate; light emitting element between the first and second electrodes; a barrier structure on the substrate and including a first surface, a second surface, and a third surface; a light conversion layer on the barrier structure; and a passivation layer on the light conversion layer. A first space defined by the second and third surfaces may be between the substrate and the barrier structure. A second space defined by the first and second surfaces may be between the barrier structure and the passivation layer. The first and second spaces may be alternately located in the first direction. The light emitting element may be in the first space. The light conversion layer may be in the at least one second space.

A light emission device includes: a wiring board; a plurality of light-emitting elements being disposed on the wiring board and electrically connected to a wiring layer of the wiring board; a first light diffusing member being disposed on the wiring board, the first light diffusing member having a plurality of throughholes and containing a light-diffusive material, each of the plurality of light-emitting elements being disposed in a corresponding one of the plurality of throughholes; a plurality of second light diffusing members covering the plurality of light-emitting elements and being disposed in the plurality of throughholes, each second light diffusing member containing a light-diffusive material, such that a content ratio of the light-diffusive material in each second light diffusing member is higher than a content ratio of the light-diffusive material in the first light diffusing member; and a wavelength converting member.

A light-emitting device includes: a package defining a recess; a light-emitting element disposed on a bottom surface of the recess; and a sealing member disposed in the recess so as to cover the light-emitting element. The sealing member includes a filler-containing layer which contains a filler and covers the light-emitting element, and a light-transmissive layer disposed on the filler-containing layer. The recess is further defined by a lateral surface having a stepped portion between the bottom surface of the recess and an opening of the recess. The light-transmissive layer covers the stepped portion. An upper surface of the light-transmissive layer is downwardly recessed.

A radiation-emitting semiconductor component includes a semiconductor body having an active layer which emits electromagnetic radiation of a first wavelength λ.sub.1 in a main radiation direction, and having a luminescence conversion layer, which converts at least part of the emitted radiation into radiation of a second wavelength λ.sub.2, which is greater than the first wavelength λ.sub.1.