A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.

Darkening of the periphery of a light-emitting module in which a plurality of light-emitting units are two-dimensionally arranged is reduced. The present light-emitting module has a light-emitting region including a plurality of light-emitting units two-dimensionally arranged, the light-emitting units each including a light-guiding plate having a first main surface, a first recess opening toward the first main surface, a second main surface opposite to the first main surface, and a second recess opening toward the second main surface; a light source inside the first recess; and a light-reflective first member inside the second recess. In each of the light-emitting units, a center of the light-emitting unit and a center of the second recess coincide with an optical axis of the light source in a plan view. In at least one of the light-emitting units, a center of the first member is closer to a center of the light-emitting region than the optical axis of the light source is in a plan view.

Provided are a display substrate, a display device, and a manufacturing method for a display substrate. The display substrate includes: a base substrate; a dielectric layer, which is located on one side of the base substrate, the dielectric layer comprising a plurality of recessed portions; a plurality of first-type light-emitting diodes, one of the first-type light-emitting diodes being located in one of the recessed portions; and a photoluminescence structure, the photoluminescence structure being located in at least some of the recessed portions, and being located on the side of the first-type light-emitting diode that faces away from the base substrate.

A color film substrate, a fabrication method therefor, and a display device. The color film substrate comprises a base substrate (1); a black matrix (2) is located on one side of the base substrate (1), the black matrix (2) having a plurality of pixel openings (21); a quantum dot color film layer (31, 32, 33) is located in the pixel openings (21) and comprises an ultraviolet light-curable quantum dot material; and a light conversion structure (4), which is located between a side wall of the black matrix (2) and a side wall of the quantum dot color film layer (31, 32, 33). When a quantum dot solution is UV cured, the light conversion structure (4) may convert ultraviolet light of 395 nm into ultraviolet light that has a shorter wavelength and higher energy. Since the light conversion structure (4) is arranged between the side wall of the black matrix (2) and the side wall of the quantum dot color film layer (31, 32, 33), the ultraviolet light that has a shorter wavelength and higher energy may be emitted from a side edge and irradiated to the quantum dot color film layer (31, 32, 33), which solves the problem of uneven UV curing of the quantum dot color film layer (31, 32, 33), thereby improving the light-emitting performance of the display device.

The invention relates to a radiation-emitting semiconductor component comprising a semiconductor body which has an active zone for generating radiation and a radiation exit surface, a contact element which is arranged on the radiation exit surface at a first lateral distance from a first edge piece of the radiation exit surface and at a second lateral distance from a second edge piece of the radiation exit surface, and a decoupling structure for improving the decoupling of the radiation generated by the active zone, which decoupling structure is arranged on the radiation exit surface and has structural elements, wherein the structural elements vary in such a way that the radiation decoupling increases from the contact element to the first and/or second edge piece. Furthermore, a method is specified for producing a such a radiation-emitting semiconductor element.

A display panel and a manufacturing method thereof are disclosed. The display panel includes a first base plate. The first base plate includes a first substrate, a plurality of light-emitting components, and a reflective part. The light-emitting components are disposed on a side of the first substrate. The reflective part is disposed between two adjacent light-emitting components and includes a plurality of cholesteric liquid crystals.

A light emitting device includes: a substrate; a plurality of light emitting elements mounted on the substrate; a covering member disposed on the substrate between adjacent ones of the light emitting elements such that an upper surface of the covering member is substantially coplanar with upper surfaces of the light emitting elements, wherein the covering member is a molded body containing an inorganic material powder and a binder; and a light transmissive member disposed on or above the plurality of light emitting elements.

According to an aspect, a display device includes: a substrate; a plurality of pixels provided to the substrate; a plurality of light emitting elements provided to the pixels; and a first light diffusion layer including a plurality of light diffusion structures and having a first surface and a second surface opposite to the first surface, the second surface facing the substrate with the light emitting elements interposed between the second surface and the substrate. The light diffusion structures each include a plurality of high refractive index layers and a plurality of low refractive index layers. The high refractive index layers and the low refractive index layers are alternately layered in a thickness direction of the first light diffusion layer. The high refractive index layers and the low refractive index layers are each curved and recessed in a direction from the first surface toward the second surface.

A wavelength conversion member, is provided with a wavelength conversion layer that includes quantum dots and is interposed between two barrier layers. The wavelength conversion member includes a light scattering layer that is provided between the barrier layers and the wavelength conversion layer, in which one of the barrier layers closest to the light scattering layer is formed of an inorganic component, the light scattering layer includes a binder, which is formed of either a compound having a hydrogen bonding functional group and a polymerizable group in a molecule or an organic metal coupling agent, and scattering particles having a diameter R of 0.2 to 5 μm, a thickness d of the light scattering layer is 0.2 to 4 μm, a thickness D of the wavelength conversion layer is 10 to 100 μm, and a ratio of d to D is 0.2% to 10%.

A light-emitting diode and a light module are disclosed. In an embodiment the light-emitting diode includes at least one light-emitting diode chip and a first optical element, which is reflective for light generated by the at least one light-emitting diode chip during operation, wherein the first optical element completely covers at least one of the at least one light-emitting diode chip in a plan view