A lighting device comprises a light-emitting module with light-emitting elements, wherein the light-emitting elements are arranged adjacent to each other and are configured to emit light towards a light-emitting side. The light-emitting module is configured such that the light-emitting elements can be addressed partially independently of each other, such that some may be brought into a switched-on state while others are brought into a switched-off state. A top layer is disposed on the light-emitting module at the light-emitting side. Further comprising a switching material capable of a reversible change in transmittance for the light emitted by changing to a higher transmittance in regions where the top layer situated on light-emitting elements in the switched-on state or to a lower transmittance in regions of the top layer situated in the switched-off state. The invention further refers to methods for producing and operating a lighting device and using a lighting device.

A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.

Provided is a display apparatus including a first semiconductor layer having a first surface and a second surface opposite to each other, a plurality of partitions protruding from the first surface, and a plurality of opening areas between the plurality of partitions, a plurality of active layers provided opposite to the plurality of opening areas on the second surface of the first semiconductor layer, a plurality of second semiconductor layers respectively provided on the plurality of active layers opposite to the first semiconductor layer, a separation film provided between two adjacent active layers among the plurality of active layers and between two adjacent second semiconductor layers among the plurality of second semiconductor layers, and a plurality of color conversion layers provided in the plurality of opening areas on the first surface of the first semiconductor layer.

Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on Al.sub.xGa.sub.1-xN (0<x≤1, x>y); and a monocrystalline Group III nitride semiconductor layer based on Al.sub.yGa.sub.1-yN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.

A synthetic quartz glass cavity member (1) is bonded to a substrate (6) having an optical device (7) mounted thereon such that the device may be accommodated in the cavity member. The cavity member (1) has an inside surface consisting of a top surface (2a) opposed to the device (7) and a side surface (3a). The top surface (2a) is a mirror surface and the side surface (3a) is a rough surface.

The present invention concerns an auto-close door for closing an area (3) at least partially defined by a frame, said auto-close door comprising: A) A motorized driving mechanism (10) suitable for moving a leading edge (1L) of a shutter (1) in a first direction (a) to close said area defined within said frame and in a second direction (β) to open said area; B) Wave detection cells (5) suitable for detecting the presence of an obstacle within the area defined by the frame; and/or C) In addition or alternatively, an impact detector (6) suitable for detecting an impacting event with a leading edge of the shutter, D) A processing unit (CPU) programmed to carry out the following operations: a) Upon opening the area a first time by moving the leading edge of the shutter in said second direction (β), maintain the area open for an opening time (t1), after which b) close the shutter, c) Record whether an obstacle and/or an impacting event is detected by the wave detector or the impact detector, upon closing the shutter; d) Count the number (n), of obstacles and/or impacting events detected during a number (N), of repetitions of the cycle defined by steps (a) to (c), and if n/N>v.sub.ref,1, wherein, v.sub.ref,1, is a first control ratio, then the opening time (t1), is prolonged to a time, t2=t1+Δt2, wherein Δt2>0; (e) Repeat steps (a) to (d) with the values t1 or t2 determined in step (d).

A light emitting module includes at least one light source, a light guide member having a demarcating groove configured to demarcate at least one light emitting region, and at least one light source arrangement part located in each of the at least one light emitting region and accommodating a light source, a first light-reflecting member disposed in the demarcating groove, and a wavelength converting member covering an upper surface of the light guide member.

A display device includes a display panel and a backlight assembly. A light source unit of the backlight assembly includes a light source board including a conductive pattern, a light emitting chip on the light source board and electrically connected to the conductive pattern, a wavelength conversion member covering the light emitting chip and converting a wavelength of light emitted from the light emitting chip; and diffusion particles in the wavelength conversion member. The light emitting chip includes a rear surface facing the light source board, a top surface opposite to the rear surface and a side surface connecting the rear surface to the top surface. A density of the diffusion particles in the wavelength conversion member at the top surface of the light emitting chip is greater than a density of the diffusion particles in the wavelength conversion member at the side surface of the light emitting chip.

The present invention relates to a semiconductor light-emitting device having a two-stage photonic crystal pattern formed thereon, and to a method for manufacturing same. According to the present invention, a second photonic crystal pattern is formed inside a first photonic crystal pattern formed on a semiconductor layer or transparent electrode layer, in order to improve light extraction efficiency. Also, according to the present invention, in order to form a second fine nanoscale photonic crystal pattern in the first photonic crystal pattern, a nanosphere lithography process employing polymer beads is used, and a trapping layer made of a thermoplastic resin was used to conveniently form polymer beads in a single layer so as to eliminate the inconvenience of having to calculate and change process variables according to polymer bead sizes in traditional nanosphere lithography processes.

A lighting device disclosed in an embodiment of the invention includes a substrate; a plurality of light sources spaced apart from each other at predetermined intervals on the substrate; a resin layer disposed on the substrate; a phosphor layer disposed on the resin layer and having a pattern layer including a concave portion and a convex portion formed on a surface facing the resin layer; and a diffusion layer disposed between the resin layer and the phosphor layer, wherein a thickness of the diffusion layer may be 10% or more and less than 50% of the maximum thickness of the phosphor layer.