Patent classifications
H01L2933/0091
DISPLAY DEVICE
A display device includes pixels; a first electrode and a second electrode disposed in each of the pixels, the first electrode and the second electrode being spaced apart from each other on a substrate; light-emitting elements disposed on the first electrode and the second electrode; a wavelength control layer disposed on the light-emitting elements; and a scattering layer disposed between the light-emitting elements and the wavelength control layer, the scattering layer comprising light-scattering particles, wherein the scattering layer is spaced apart from another scattering layer and is disposed in each of the pixels.
LIGHT-EMITTING MODULE, SURFACE LIGHT SOURCE, AND LIQUID-CRYSTAL DISPLAY DEVICE
Darkening of the periphery of a light-emitting module in which a plurality of light-emitting units are two-dimensionally arranged is reduced.
The present light-emitting module has a light-emitting region including a plurality of light-emitting units two-dimensionally arranged, the light-emitting units each including a light-guiding plate having a first main surface, a first recess opening toward the first main surface, a second main surface opposite to the first main surface, and a second recess opening toward the second main surface; a light source inside the first recess; and a light-reflective first member inside the second recess. In each of the light-emitting units, a center of the light-emitting unit and a center of the second recess coincide with an optical axis of the light source in a plan view. In at least one of the light-emitting units, a center of the first member is closer to a center of the light-emitting region than the optical axis of the light source is in a plan view.
Component with Buried Doped Areas and Procedures for the Production of A Component
In an embodiment, a component includes a carrier and a main body disposed on the carrier, wherein the main body includes a first semiconductor layer of a first charge carrier type, a second semiconductor layer of a second charge carrier type, and an optically active zone located therebetween, the optically active zone configured to emit radiation, wherein the first semiconductor layer includes a contiguous main layer and local regions at least locally buried in the main layer and laterally enclosed by the main layer, wherein the local regions are doped, and wherein the local regions has a smaller vertical layer thickness compared to the first semiconductor layer.
OPTOELECTRONIC COMPONENT
An optoelectronic component includes a housing having a cavity in which an optoelectronic semiconductor chip having an emission face that emits light rays and a transparent potting material are arranged, wherein the cavity includes at least one side wall at least partly reflecting light rays incident on the side wall and reflectivity of which decreases as an operating period of the component increases, conversion particles are embedded into the potting material, which conversion particles convert light rays having a first wavelength incident on the conversion particles into light rays having a second wavelength, and scattering particles are embedded into the potting material, which scattering particles scatter light rays incident on the scattering particles and the scattering capability of which scattering particles increases as the operating period increases.
LIGHT EMITTING DEVICE WITH ASYMMETRICAL RADIATION PATTERN AND MANUFACTURING METHOD OF THE SAME
A monochromatic chip-scale packaging (CSP) light emitting diode (LED) device with an asymmetrical radiation pattern, including a flip-chip LED semiconductor die, and a reflective structure, is disclosed. A white-light broad-spectrum CSP LED device with asymmetrical radiation pattern is also disclosed by further including a photoluminescent structure in the CSP LED device. The photoluminescent structure covers at least the upper surface of the LED semiconductor die. The reflective structure adjacent to the LED semiconductor die and the photoluminescent structure reflects at least partial light beam emitted from the edge surface of the LED semiconductor die or the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically. A method to fabricate the aforementioned CSP LED device is also disclosed. Without using additional optical lens, the CSP LED device is suitable for the applications requiring asymmetrical illuminations, while keeping the advantage of its compact form factor.
LIGHTING DEVICE
A lighting device is provided. The lighting device includes a lightguide panel having an end face and a light-emitting device configured to emit light toward the end face of the lightguide panel. The light-emitting device includes a light-emitting element and a first light-transmissive member provided between the end face of the lightguide panel and the light-emitting element. The first light-transmissive member has a plurality of protrusions on a surface thereof. At least one of the plurality of protrusions is in contact with the end face of the lightguide panel.
Light-emitting device and method of manufacturing the light-emitting device
A light-emitting device includes: a package defining a recess; a light-emitting element mounted on surface that defines a bottom of the recess; and a sealing member disposed in the recess so as to cover the light-emitting element and made of a light-transmissive resin that contains a filler with an average particle diameter of 200 nm or more and 500 nm or less. The sealing member comprises a filler-containing layer, which contains the filler, and a light-transmissive layer that are layered in an order from a bottom side of the recess. The filler-containing layer has a thickness of equal to or larger than a height of the light-emitting element.
LIGHT-ALTERING PARTICLE ARRANGEMENTS FOR LIGHT-EMITTING DEVICES
Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly LED devices with light-altering particle arrangements are disclosed. An LED device may include an LED chip with a light-altering material arranged to redirect light in a desired emission direction. The light-altering material may include light-altering particles with a median particle size that is determined based on a wavelength of light provided by the LED chip. Such light-altering particles may be arranged proximate sidewalls of the LED chip to redirect lateral emissions. LED devices may further include lumiphoric materials and other light-altering particles arranged proximate the lumiphoric materials with a median particle size that is determined based on a wavelength of light provided by the lumiphoric materials. By selectively arranging different light-altering particles in different areas of an LED device based on what wavelengths of light are most concentrated, the amount of overall light redirected may be increased, thereby improving efficiency.
Compositions and methods including depositing nanomaterial
An ink composition comprising a nanomaterial and a liquid vehicle, wherein the liquid vehicle includes a composition including one or more functional groups that are capable of being cross-linked is disclosed. An ink composition comprising a nanomaterial, a liquid vehicle, and scatterers is also disclosed. An ink composition including a nanomaterial and a liquid vehicle, wherein the liquid vehicle includes a perfluorocompound is further disclosed. A method for inkjet printing an ink including nanomaterial and a liquid vehicle with a surface tension that is not greater than about 25 dyne/cm is disclosed. In certain preferred embodiments, the nanomaterial includes semiconductor nanocrystals. Devices prepared from inks and methods of the invention are also described.
Phosphor Plate and Method for Manufacturing Same
The present invention relates to a phosphor plate comprising: a base plate; and phosphor included in the base plate, and provides a phosphor plate and a method for manufacturing the same, wherein one side of the phosphor plate comprises: a protrusion part formed by protrusion of the phosphor fixed to the base plate; and a recess part formed by separation of the phosphor from the base plate, the protrusion part being 20 to 70% with respect to the area of one side of the phosphor plate.