H01P7/06

Dielectric filter, transceiver device, and base station
11664564 · 2023-05-30 · ·

Example dielectric filters, transceiver devices, and base stations are described. One example dielectric filter includes a dielectric block whose surface is covered with a metal layer, where the dielectric block includes at least two resonant cavities. The dielectric block is provided with a via hole, the via hole is located between two adjacent resonant cavities, and an inner wall of the via hole is covered with a metal layer. A first partition ring is disposed on the surface of the dielectric block and is surrounding at least one opening of the via hole, and the dielectric block is exposed in an area enclosed by an inner edge of the first partition ring and an outer edge of the first partition ring.

Dielectric filter, transceiver device, and base station
11664564 · 2023-05-30 · ·

Example dielectric filters, transceiver devices, and base stations are described. One example dielectric filter includes a dielectric block whose surface is covered with a metal layer, where the dielectric block includes at least two resonant cavities. The dielectric block is provided with a via hole, the via hole is located between two adjacent resonant cavities, and an inner wall of the via hole is covered with a metal layer. A first partition ring is disposed on the surface of the dielectric block and is surrounding at least one opening of the via hole, and the dielectric block is exposed in an area enclosed by an inner edge of the first partition ring and an outer edge of the first partition ring.

METHODS AND SYSTEMS FOR TREATMENT OF SUPERCONDUCTING MATERIALS TO IMPROVE LOW FIELD PERFORMANCE
20230164904 · 2023-05-25 ·

A system and method for treating a cavity comprises preparing a superconducting radio frequency (SRF) cavity for removal of a dielectric layer from on an inner surface of the SRF cavity, subjecting the SRF cavity to a heat treatment in order to remove the dielectric layer from the inner surface of the SRF cavity, and preventing the development of a new dielectric layer on the inner surface of the SRF cavity by preventing an interaction between the inner surface of the SRF cavity and atmospheric gasses.

METHODS AND SYSTEMS FOR TREATMENT OF SUPERCONDUCTING MATERIALS TO IMPROVE LOW FIELD PERFORMANCE
20230164904 · 2023-05-25 ·

A system and method for treating a cavity comprises preparing a superconducting radio frequency (SRF) cavity for removal of a dielectric layer from on an inner surface of the SRF cavity, subjecting the SRF cavity to a heat treatment in order to remove the dielectric layer from the inner surface of the SRF cavity, and preventing the development of a new dielectric layer on the inner surface of the SRF cavity by preventing an interaction between the inner surface of the SRF cavity and atmospheric gasses.

A TUNABLE WAVEGUIDE RESONATOR

The present invention relates to a tunable waveguide resonator and a method of tuning a frequency of the tunable waveguide resonator. The waveguide resonator comprises a waveguide part having a plurality of walls where one of the plurality of walls at least partly comprises a tuning element. The tuning element has a first main surface facing toward a first main surface of an inner wall of one other wall of the plurality of walls. The tuning element is caused to, in response to a change in a temperature of the tuning element be reversibly displaced with respect to a reference plane of the first main surface of the tuning element along an extension perpendicular to the first main surface of the one other inner wall and whereby changing a dimension of a cavity of the tunable wave-guide resonator.

A TUNABLE WAVEGUIDE RESONATOR

The present invention relates to a tunable waveguide resonator and a method of tuning a frequency of the tunable waveguide resonator. The waveguide resonator comprises a waveguide part having a plurality of walls where one of the plurality of walls at least partly comprises a tuning element. The tuning element has a first main surface facing toward a first main surface of an inner wall of one other wall of the plurality of walls. The tuning element is caused to, in response to a change in a temperature of the tuning element be reversibly displaced with respect to a reference plane of the first main surface of the tuning element along an extension perpendicular to the first main surface of the one other inner wall and whereby changing a dimension of a cavity of the tunable wave-guide resonator.

CAVITY FILTERS AND FILTER MODULES THEREFOR
20230111963 · 2023-04-13 ·

The disclosure provides a filtering module for a cavity filter having a housing defining an enclosed cavity, wherein a surface of the cavity is electromagnetically conductive; and a plurality of planar resonators arranged within the cavity, one or more of the resonators being rotatable about an axis of rotation so as to vary an electric-field coupling between the resonator and other resonators of the plurality of resonators. The disclosure also provides a cavity filter having an input for receiving a signal to be filtered; a plurality of filtering modules, each filtering module comprising: a cavity, wherein a surface of the cavity is electromagnetically conductive; and a plurality of resonators arranged within the cavity, at least one of the resonators being movable so as to vary an electromagnetic coupling between the resonator and other resonators of the plurality of resonators; and an output for outputting a filtered signal.

Resonator with a dielectric element including first and second chambers therein connected by a channel, wherein a liquid crystal having an adjustable level fills the first and second chambers and the channel

A dielectric element for a resonator and a corresponding resonator are described. The dielectric element has a first chamber and a second chamber, which are fluidically connected to one another by a connecting channel. A liquid crystal is contained in the first chamber, a gas is contained in the second chamber. Changes in the volume of the liquid crystal can be compensated by a change in the volume of the gas, because the liquid crystal can move in the connecting channel. Consequently, such a resonator can be exposed to greatly fluctuating temperature ranges without requiring any further compensation for temperature-induced changes in the volume of the liquid crystal. The dielectric element can also be hermetically closed to complete the production process.

Resonator with a dielectric element including first and second chambers therein connected by a channel, wherein a liquid crystal having an adjustable level fills the first and second chambers and the channel

A dielectric element for a resonator and a corresponding resonator are described. The dielectric element has a first chamber and a second chamber, which are fluidically connected to one another by a connecting channel. A liquid crystal is contained in the first chamber, a gas is contained in the second chamber. Changes in the volume of the liquid crystal can be compensated by a change in the volume of the gas, because the liquid crystal can move in the connecting channel. Consequently, such a resonator can be exposed to greatly fluctuating temperature ranges without requiring any further compensation for temperature-induced changes in the volume of the liquid crystal. The dielectric element can also be hermetically closed to complete the production process.

Microelectronic assemblies with substrate integrated waveguide

Microelectronic assemblies that include a lithographically-defined substrate integrated waveguide (SIW) component, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate portion having a first face and an opposing second face; and an SIW component that may include a first conductive layer on the first face of the package substrate portion, a dielectric layer on the first conductive layer, a second conductive layer on the dielectric layer, and a first conductive sidewall and an opposing second conductive sidewall in the dielectric layer, wherein the first and second conductive sidewalls are continuous structures.