A method of fabricating an RF filter on a semiconductor package comprises forming a first dielectric buildup film. A second dielectric buildup film is formed over the first dielectric buildup film, the second dielectric buildup film comprising a dielectric material that contains a metallization catalyst, wherein the dielectric material comprises one of an epoxy-polymer blend dielectric material, silicon dioxide and silicon nitride, and a low-k dielectric. A trench is formed in the second dielectric buildup film with laser ablation, wherein the laser ablation selectively activates sidewalls of the trench for electroless metal deposition. A metal selectively is plated to sidewalls of the trench based at least in part on the metallization catalyst and immersion in an electroless solution. A low-loss buildup film is formed over the metal that substantially fills the trench.

An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.

Microelectronic assemblies that include a lithographically-defined substrate integrated waveguide (SIW) component, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate portion having a first face and an opposing second face; and an SIW component that may include a first conductive layer on the first face of the package substrate portion, a dielectric layer on the first conductive layer, a second conductive layer on the dielectric layer, and a first conductive sidewall and an opposing second conductive sidewall in the dielectric layer, wherein the first and second conductive sidewalls are continuous structures.

An RF filter comprising a resonator element and a polymer composition is provided. The polymer composition contains an aromatic polymer and has a melting temperature of about 240° C. or more. The polymer composition exhibits a dielectric constant of about 5 or less and dissipation factor of about 0.05 or less at a frequency of 10 GHz.

The disclosed radio frequency (RF) bandpass filter may include an RF transmission medium that defines (1) a plurality of cavities aligned parallel to each other along a major axis, where (a) each cavity includes planar surfaces that define (i) a first dimension aligned with the major axis and (ii) second and third dimensions aligned perpendicular to the major axis and each other, where the first dimension is shorter than the second and third dimensions and (b) each adjacent pair of cavities is coupled by an inter-cavity slot, (2) an RF inlet that couples a received RF signal to a first cavity at a first end of the plurality of cavities, and (3) an RF outlet that couples a filtered RF signal from a second cavity at a second end of the plurality of cavities externally to the filter. Various other filters and manufacturing methods thereof are also disclosed.

An architecture for, and techniques for fabricating, a thermal decoupling device are provided. In some embodiments, thermal decoupling device can be included in a thermally decoupled cryogenic microwave filter. In some embodiments, the thermal decoupling device can comprise a dielectric material and a conductive line. The dielectric material can comprise a first channel that is separated from a second channel by a wall of the dielectric material. The conductive line can comprise a first segment and a second segment that are separated by the wall. The wall can facilitate propagation of a microwave signal between the first segment and the second segment and can reduce heat flow between the first segment and the second segment of the conductive line.

A filter is provided and includes potting material formed into a body defining a through-hole. The body includes first and second opposing faces and a sidewall extending between the first and second opposing faces. The sidewall is formed to define first and second openings at opposite ends of the through-hole, first angles at an interface between the sidewall and the first face and second angles, which complement the first angles, at an interface between the sidewall and the second face.

Methods and apparatus for a self-supported stripline structure including a center conductor having stubs. Opposing first and second ground planes form a cavity in which the center conductor is located. Opposing first and second lateral structures enclose the cavity sides. A first one of the stubs is connected to the first lateral structure to fix the center conductor in position within the cavity.

The present application describes an apparatus a non-transitory memory having instructions stored thereon and a processor operably coupled to the non-transitory memory configured to execute the instructions. The executed instructions include extracting eigenvalues for a coupling matrix of a target device. The executed instructions also include extracting a first set of eigenvalues for a coupling matrix of a device under tune (DUT). The eigenvalues of the target device may be different than the first set of eigenvalues of the DUT. The executed instructions further include causing a material removal source to be positioned at a first location of the DUT. The executed instructions even further include causing the material removal source to tune the DUT. The executed instructions yet further include measuring a second set of eigenvalues of the DUT. The executed instructions yet even further include observing an iterative convergence of the DUT and the target device.

Described is a method for forming a planar transmission line low-pass filter and a resulting filter. The method comprises several acts, including using lithographic processes and a castable polymer with absorptive matrix as a spin-on dielectric to form the planar transmission line low-pass filter.