Microelectronic assemblies that include a lithographically-defined substrate integrated waveguide (SIW) component, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate portion having a first face and an opposing second face; and an SIW component that may include a first conductive layer on the first face of the package substrate portion, a dielectric layer on the first conductive layer, a second conductive layer on the dielectric layer, and a first conductive sidewall and an opposing second conductive sidewall in the dielectric layer, wherein the first and second conductive sidewalls are continuous structures.

A power combiner/divider includes a main conductor; a ground conductor radially exterior of the main conductor; an input connector having a center conductor electrically coupled to the main conductor and having a second conductor electrically coupled to the ground conductor; a conductive cylinder including an inner cylindrical surface radially exterior of and spaced apart from the main conductor, including an outer cylindrical surface; a second ground conductor radially exterior of the outer cylindrical surface of the conductive cylinder, a gap being defined between the second ground conductor and the outer surface of the conductive cylinder; a plurality of output connectors, the output connectors having center conductors electrically coupled to the conductive cylinder and having respective second conductors electrically coupled to the second ground conductor; and means for receiving and retaining a gas inside the divider/combiner. Methods of manufacturing are also disclosed.

A cavity device is disclosed comprising a plurality of flat boards stacked one on lop of the other to form a multilayered structure. At least some of the flat boards comprise at least one opening or perforations having one or more layers of electrically conducting materials configured to establish electrical conduction with one or more layers of electrically conducting materials of another one of the flat boards, to thereby form electrically conducting patterns in the multilayered structure for interacting with electromagnetic radiation introduced into the cavity device.

A microwave/millimeter device having a narrow gap between two parallel surfaces of conducting material by using a texture or multilayer structure on one of the surfaces is disclosed. The fields are mainly present inside the gap, and not in the texture or layer structure itself, so the losses are small. The microwave/millimeter wave device further includes one or more conducting elements, such as a metallized ridge or a groove in one of the two surfaces, or a metal strip located in a multilayer structure between the two surfaces. The waves propagate along the conducting elements. At least one of the surfaces is provided with means to prohibit the waves from propagating in other directions between them than along the ridge, groove or strip. At very high frequency, the gap waveguides and gap lines may be realized inside an IC package or inside the chip itself.

Filter devices are provided herein. A filter device includes a plurality of low-band resonators and a plurality of high-band resonators. In some embodiments, adjacent ones of the plurality of high-band resonators are spaced farther apart from each other than adjacent ones of the plurality of low-band resonators are spaced apart from each other.

The disclosure relates to a harmonic oscillator and a preparation method thereof, a filtering device and an electromagnetic wave device. The harmonic oscillator includes at least one dielectric slab and response units attached on one surface of the at least one dielectric slab, where the response units are structures manufactured by conductive material and provided with geometric patterns. According to the technical solution of the disclosure, the filtering device and the electromagnetic wave device with the harmonic oscillator are good in structure stability. Swinging of a harmonic oscillator sheet layer is low in loss. The Q value of the harmonic oscillator prepared by the disclosure is high; and loss of a resonant cavity, the filtering device and a microwave device with the harmonic oscillator is obviously reduced.

Plasma jet assemblies utilizing evanescent mode cavity resonators, and methods of making the same and using the same, are described.

A power combiner/divider includes a main conductor; a ground conductor radially exterior of the main conductor; an input connector having a center conductor electrically coupled to the main conductor and having a second conductor electrically coupled to the ground conductor; a conductive cylinder including an inner cylindrical surface radially exterior of and spaced apart from the main conductor, including an outer cylindrical surface; a second ground conductor radially exterior of the outer cylindrical surface of the conductive cylinder, a gap being defined between the second ground conductor and the outer surface of the conductive cylinder; a plurality of output connectors, the output connectors having center conductors electrically coupled to the conductive cylinder and having respective second conductors electrically coupled to the second ground conductor; and means for receiving and retaining a gas inside the divider/combiner. Methods of manufacturing are also disclosed.

The invention provides a bandpass filter, comprising: a substrate with a plurality of dielectric layers; a plurality of resonators; and a plurality of ground layers each having one slot arranged on; wherein the plurality of resonators are arrayed vertically each on respective one of the plurality of dielectric layers alternately without any of offsets, and each of the plurality of ground layers is between adjacent dielectric layers. Adjacent slots are arranged in opposite sides of the ground layers. The invention also provides a method of fabricating the bandpass filter.

A terminal connection comprises an HF conductor and a terminal apparatus. The terminal apparatus comprises an HF conductor receiving element comprising an HF conductor receiving hole. At least one solder deposit is arranged between the HF conductor and the HF conductor receiving element of the terminal apparatus to establish an electrically conductive connection. There is also an insertion sleeve comprising a receiving opening into which the HF conductor is inserted. The insertion sleeve is inserted into the HF conductor receiving hole in the HF conductor receiving element via an insertion opening on the plug-in side. The insertion sleeve is undeformable and/or is formed from a dielectric. It may also be adapted, in terms of the circumferential lateral face thereof, to an inner face of the HF conductor receiving hole. It may also comprise a receiving channel, which is used for receiving the at least one solder deposit.