A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

The invention relates to a process for fabricating a semiconductor diode (1) via transfer of a semiconductor stack (20) then local etching to form a semiconductor pad (30), the production of the semiconductor pad (30) comprising a plurality of sequences comprising a dry etch that leaves a residual segment (23.1; 22.1), formation of a hard-mask spacer (42.1; 43.1), then a wet etch of the residual segment (23.1; 22.1).

A light emitting device includes a semiconductor light source device including a plurality of semiconductor light emitting elements, a wavelength conversion member that converts a wavelength of irradiation light from the semiconductor light source device, a concentrating lens that concentrates the irradiation light from the semiconductor light source device, and a cylindrical holder. The semiconductor light source device, the wavelength conversion member and the concentrating lens is supported by a support portion provided in an inner diameter portion of the cylindrical holder.

A light emitting device includes a semiconductor light source device including a plurality of semiconductor light emitting elements, a wavelength conversion member that converts a wavelength of irradiation light from the semiconductor light source device, a concentrating lens that concentrates the irradiation light from the semiconductor light source device, and a cylindrical holder. The semiconductor light source device, the wavelength conversion member and the concentrating lens is supported by a support portion provided in an inner diameter portion of the cylindrical holder.

Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.

An optoelectronic device includes a substrate and at least three emitters, which are disposed on the substrate and are configured to emit respective beams of light. A plurality of waveguides are disposed on the substrate and have respective input ends coupled to receive the beams of light from respective ones of the emitters, and curve adiabatically from the input ends to respective output ends of the waveguides, which are arranged on the substrate in an array having a predefined pitch. Control circuitry is configured to apply a temporal modulation independently to each of the beams of light.

The present disclosure falls into the field of optoelectronics, particularly, includes the design, epitaxial growth, fabrication, and characterization of Laser Diodes (LDs) operating in the ultraviolet (UV) to infrared (IR) spectral regime on patterned substrates (PSs) made with (formed on) low cost, large size Si, or GaN on sapphire, GaN, and other wafers. We disclose three types of PSs, which can be universal substrates, allowing any materials (III-Vs, II-VIs, etc.) grown on top of it with low defect and/or dislocation density.

A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.

Described herein are IC devices that include hybrid lasers formed with a bonding layer. Hybrid lasers include an active light-emitting region coupled to a waveguide. In a hybrid laser, the waveguide and the light-emitting regions are formed separately from different materials, e.g., the waveguide is a single-crystal silicon, and the light-emitting region includes III-V semiconductors. An amorphous group IV material, such as silicon or germanium, is advantageously used to bond the light-emitting region to the waveguide.