A laser emitter is provided, including a substrate and a dielectric mask layer located proximate to and above the substrate in a thickness direction. The dielectric mask layer may have a plurality of trenches formed therein. The plurality of trenches may have a plurality of different respective widths. The laser emitter may further include a respective nanowire located within each trench of the plurality of trenches. Each nanowire may include a first semiconductor layer located above the substrate in the thickness direction. Each nanowire may further include a quantum well layer located proximate to and above the first semiconductor layer in the thickness direction. Each nanowire may further include a second semiconductor layer located proximate to and above the quantum well layer in the thickness direction.

UV laser devices, systems, and methods are shown and/or described herein. Included are a method, device or system for VECSEL and MECSEL lasers including both barrier-pumped and in-well pumped lasers. Also disclosed is a method of manufacturing gain chips for use in the lasers, arrangements of lasers, and selection of proper non-linear crystal (NLC) for use in the device.

It is necessary to reduce the power consumption of a plurality of optical amplifiers when there is a difference in the required pumping power between the plurality of optical amplifiers; therefore, an optical amplifying apparatus according to an exemplary aspect of the invention includes a plurality of optical amplifying means for amplifying a plurality of optical signals, each of the plurality of optical amplifying means including a gain medium; a plurality of laser light generating means for generating a plurality of laser beams; at least one optical coupling means for coupling the plurality of laser beams variably in accordance with a coupling factor and outputting a plurality of excitation light beams, each of the plurality of excitation light beams exciting the gain medium; and controlling means for controlling the coupling factor and an output power of each of the plurality of laser light generating means.

A laser emitter is provided, including a substrate and a dielectric mask layer located proximate to and above the substrate in a thickness direction. The dielectric mask layer may have a plurality of trenches formed therein. The plurality of trenches may have a plurality of different respective widths. The laser emitter may further include a respective nanowire located within each trench of the plurality of trenches. Each nanowire may include a first semiconductor layer located above the substrate in the thickness direction. Each nanowire may further include a quantum well layer located proximate to and above the first semiconductor layer in the thickness direction. Each nanowire may further include a second semiconductor layer located proximate to and above the quantum well layer in the thickness direction.

A method for numerical control milling, forming and polishing of a large-diameter aspheric lens to solve long time-consuming and severe tool wear in the machining of a meter-scale large-diameter aspheric surface is disclosed. An aspheric surface is discretized into a series of rings with different radii, and the rings are sequentially machined through generating cutting by using an annular grinding wheel tool; the rings are equally spaced, there are a total of N rings, and the width of any ring is jointly determined by the N.sup.th ring, the (N-1)th ring, positioning accuracy, and a generatrix equation of the aspheric lens, and the n.sup.th ring has a curvature radius of Rn =sqrt(R0.sup.2-k*(n*dx).sup.2); and the aspheric surface is enveloped by a large number of rings. The tool used for machining has a diameter greater than the semi-diameter of the aspheric surface, and contact area between tool and workpiece surface is rings.

A laser with a hexagonal semiconductor microdisk to solve the problems of a low quality factor of a hexagonal whispering-gallery mode and light exiting difficulty of a triangular whispering-gallery mode is disclosed. Based on physical characteristics of stimulated radiation of gain materials with a high refractive index, the apparatus uses a distributed Bragg reflection layer to reduce an optical loss of a microcavity laser, and uses a hexagonal semiconductor microdisk as an optical resonator and laser gain material. As an optical pump source, the laser provides an optical gain, and when the gain exceeds a microcavity laser threshold, generates laser light for exiting. By controlling a laser spot of the pump source to be located at a corner of the hexagonal microdisk, the laser light in a double-triangular whispering-gallery optical resonance mode is generated after stimulated radiation for exiting.

A semiconductor membrane laser chip includes a planar-shaped lasing medium having an upper surface and a lower surface opposite the upper surface, the lasing medium configured to emit electromagnetic radiation at a laser wavelength λ.sub.1. A first heat spreader is bonded to one of the upper surface and the lower surface of the lasing medium. A first dielectric layer is arranged on the lower surface of the lasing medium or arranged on a lower surface of the first heat spreader when the first heat spreader is bonded to the lower surface of the lasing medium. The first dielectric layer is reflective for the laser wavelength λ.sub.1.

A laser structure including a Si or Ge substrate, a III-V buffer layer formed on the substrate, a light emitting diode (LED) formed on the buffer layer configured to produce visible light, a lens disposed on the LED to focus light from the LED, a photonic crystal layer formed on the LED to receive the light focused by the lens, and a monolayer semiconductor nanocavity laser formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED. The LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.

The laser device includes a first mirror and a second mirror forming a resonator, a gain medium disposed between the first mirror and the second mirror and having a light emitting surface, an antireflection film provided on the light emitting surface of the gain medium, at least one optical element disposed between the gain medium and the second mirror, and a diffraction grating disposed between the optical element and the second mirror. The gain medium is a semiconductor layered body including an active layer and having a varying gain distribution in at least a first direction within the light emitting surface, and includes no waveguide.

A dual output laser diode may include first and second end facets and an active section. The first and second end facets have low reflectivity. The active section is positioned between the first end facet and the second end facet. The active section is configured to generate light that propagates toward each of the first and second end facets. The first end facet is configured to transmit a majority of the light that reaches the first end facet through the first end facet. The second end facet is configured to transmit a majority of the light that reaches the second end facet through the second end facet.