In the present disclosure, in an EADFB laser in which an SOA has been integrated, a new configuration in which deterioration of optical waveform quality is solved or mitigated while keeping characteristics that a manufacturing process can be simplified by using the same layer structure is indicated. In the optical transmitter of the present disclosure, a waveguide structure having a tapered structure in at least a part of the SOA waveguide is adopted. A width of the waveguide is changed to be reduced in an SOA region, and an amount of carrier consumption is made uniform in an optical waveguide direction. A waveguide width is continuously reduced in an optical waveguide direction in the SOA so that the optical confinement coefficient is reduced, and light power distributed in an active layer region is made constant.

A laser apparatus includes: a laser unit including: a laser element unit including a phase adjusting portion configured to adjust an optical length of a laser resonator and enable frequency of laser light to be tuned; and a monitor unit configured to obtain a monitored value corresponding to the frequency of the laser light; a temperature controller configured to control temperature of the laser unit; and a control unit configured to execute: controlling the phase adjusting portion such that the monitored value is adjusted to a target monitored value corresponding to a target frequency set as the frequency of the laser light, while maintaining temperature set for the temperature controller constant; and controlling the temperature controller such that the frequency of the laser light is adjusted to the target frequency in a case where continuous fine adjustment control of the frequency of the laser light has been instructed.

A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

A semiconductor laser drive circuit includes: an anode electrode divided into at least one gain region and at least one light absorption region; a cathode electrode shared between the gain region and the light absorption region; and a resistance connected to the anode electrode of the light absorption region.

The invention provides a light generating device (1000) configured to generate device light (1001), wherein the light generating device (1000) comprises: a first light source (110) configured to generate one or more of UV and blue first light source light (111), wherein the first light source (110) is a first laser light source (10); a second light source (120) configured to generated green second light source light (121), wherein the second light source (120) is a second laser light source (20); a third light source (130) configured to generate red third light source light (131), wherein the third light source (130) is a third laser light source (30); a fourth light source (140) configured to generate blue fourth light source light (141), wherein the fourth light source (140) is a fourth laser light source (40); a first luminescent material (210) configured to convert at least part of the first light source light (111) into first luminescent material light (211) having an emission band having wavelengths in one or more of (a) the green spectral wavelength range and (b) the yellow spectral wavelength range, wherein the first luminescent material (210) comprises a luminescent material of the type A3B5O12:Ce, wherein A comprises one or more of Y, La, Gd, Tb and Lu, and wherein B comprises one or more of Al, Ga, In and Sc; an optical element (430) configured to combine (i) optionally unconverted first light source light (111), (ii) the second light source light (121), (iii) the third light source light (131), (iv) the fourth light source light (141), and (v) the first luminescent material light (211), to provide device light (1001), wherein the light generating device (1000) is configured to provide in an operational mode white device light (1001) comprising at least the luminescent material light (211) and the fourth light source light (141); and a control system (300) configured to control one or more of the light sources (110, 120, 130, 140).

A laser device includes a laser and a controller. The laser has an optical cavity that includes an active gain section and a phase shifter. The controller is configured to excite the active gain section to lase light out of the optical cavity. The controller is further configured to, while the light is being lased out of the optical cavity, modulate a refractive index of the phase shifter to shift an optical phase of lasing modes of the lased light to thereby reduce coherence of the lased light.

In some implementations, a thermally-controlled photonic structure may include a suspended region that is suspended over a substrate; a plurality of bridge elements connected to the suspended region and configured to suspend the suspended region over the substrate, where a plurality of openings are defined between the plurality of bridge elements; and at least one heater element having a modulated width disposed on the suspended region. The at least one heater element having the modulated width may include at least one section of a greater width and at least one section of a lesser width. The at least one section of the greater width may be in alignment with an opening of the plurality of openings and the at least one section of the lesser width may be in alignment with a bridge element of the plurality of bridge elements.

A semiconductor laser including: an optical resonator that has a first compound semiconductor layer containing an n-type impurity, a second compound semiconductor layer containing a p-type impurity, and a light-emitting layer provided between the first compound semiconductor layer and the second compound semiconductor layer; and a pulse injection means that injects excitation energy for a sub-nanosecond duration into the optical resonator, wherein the light-emitting layer has an at least five-period multiple quantum well structure, and the semiconductor laser generates optical pulses having a pulse width shorter than 2.5 times the photon lifetime in the optical resonator.

A semiconductor laser including: an optical resonator that has a first compound semiconductor layer containing an n-type impurity, a second compound semiconductor layer containing a p-type impurity, and a light-emitting layer provided between the first compound semiconductor layer and the second compound semiconductor layer; and a pulse injection means that injects excitation energy for a sub-nanosecond duration into the optical resonator, wherein the optical resonator has a multi-section structure separated into at least one gain region and at least one absorption region, and the semiconductor laser generates optical pulses having a pulse width shorter than 2.5 times the photon lifetime in the optical resonator.

A method and apparatus provide for determining a temperature at a junction of a laser diode when the laser diode is operated in a lasing state that facilitates heat-assisted magnetic recording, comparing the junction temperature and an injection current supplied during the lasing state to stored combinations of junction temperature and injection current, and determining a likelihood of mode hopping occurring for the laser diode during the lasing state based on the comparison to stored combinations of junction temperature and injection current.