A semiconductor laser element includes: a substrate; and a laser array portion that includes a plurality of light emitting portions arranged side by side, and is stacked above the substrate, wherein a stacked body of the substrate and the laser array portion includes a pair of resonator end faces on opposite faces, and a groove portion that extends from the laser array portion into the substrate is provided on at least one of the pair of resonator end faces between two adjacent light emitting portions among the plurality of light emitting portions.

A method of manufacturing a light emitting module comprising at least one light emitting device in which a plurality of light emitting elements are mounted, includes: providing a plurality of light emitting devices including one or more first light emitting devices and one or more second light emitting devices, wherein a number of the light emitting elements mounted in the first light emitting device is different from a number of the light emitting elements mounted in the second light emitting device; providing a first mounting substrate having a mounting surface provided with a plurality of connection patterns having the same pattern, each of the connection patterns corresponding to a respective one of the light emitting devices; and mounting at least some of the plurality of light emitting devices, selected from the one or more first light emitting devices and one or more second light emitting devices, on the connection patterns.

A laser package includes: a substrate having an upper surface; a first laser element disposed on the substrate and configured to emit light in a first direction; a first optical member having a lower surface bonded to the upper surface of the substrate, a reflecting surface inclined relative to the lower surface and configured to reflect the light, and an upper surface connected to the reflecting surface, the upper surface of the first optical member being located farther in the first direction than the reflecting surface; and a bonding material disposed on the upper surface of the substrate. The first optical member is bonded to the substrate via the bonding material. In a top view, a portion of the bonding material protrudes from three sides of the upper surface of the first optical member.

Disclosed are an element comprising a substrate and at least two different optoelectronic devices, wherein the at least two different optoelectronic devices are monolithically fabricated on the substrate; and a method for producing the same. Also disclosed is an organic semiconductor laser diode comprising a substrate, an insulating grating, a first electrode, an organic layer and a second electrode in this order.

A semiconductor laser device includes: a support base having a plurality of mounting surfaces arranged in a first direction, wherein heights of the mounting surfaces from a reference plane that is parallel to the first direction decrease stepwise or gradually along the first direction; a first semiconductor laser element secured to a first mounting surface; a second semiconductor laser element secured to a second mounting surface; a first slow-axis collimator lens secured to the first mounting surface, the first slow-axis collimator lens being located at a position at which the first laser light is incident; a second slow-axis collimator lens directly or indirectly secured to the second mounting surface, the second slow-axis collimator lens being located at a position at which the second laser light is incident; and a first sealing cover that defines an inner space in which the first and second semiconductor laser elements are held.

A system includes multiple laser diode modules that are spatially separated and configured to generate multiple optical beams that propagate at angles relative to each other. The system also includes an optical element having at least one entrance surface and at least one exit surface. The optical element is configured to receive the optical beams at the at least one entrance surface and output each optical beam through the at least one exit surface such that the output optical beams are closely spaced, substantially the same size, and substantially parallel to each other at a common distance downstream from the optical element, and the optical beams all share a common downstream image plane.

A semiconductor-fiber-laser assembly is provided that includes a pumping module, an active optical fiber and an assembling board. The active optical fiber is provided on an upper surface of the assembling board, the pumping module is provided on a surface of the assembling board that is the same as or opposite to the upper surface; and input-side and output-side optical-fiber gratings are provided at two ends of the active optical fiber, to form a laser resonator between the input-side and output-side optical-fiber gratings. The pumping module includes a plurality of semiconductor-laser single emitters, a collimating-lens group and a mirror group that are sequentially arranged, and light beams from the semiconductor-laser single emitters pass through the mirror group to realize beam combination.

A system and method for combining multiple emitters into a multi-wavelength output beam having a certain band and combining a plurality of these bands into a single output using non-free space combining modules.

A multilayer interconnect is described which enables electrically connecting a complex distribution of VCSEL or other light emitter elements in a large high density addressable array. The arrays can include many groups of VCSEL elements interspersed among each other to form a structured array. Each group can be connected to a contact pad so that each group of light emitter elements can be activated separately.

A plurality of surface emitting lasers are formed on the single surface emitting laser element. The plurality of surface emitting lasers have respective emission wavelengths selected from wavelengths satisfying condition of:
0<λ.sub.1−λ.sub.s≤5.36×10.sup.−5λ.sub.c.sup.2−×5.83×10.sup.−2λ.sub.c+32.4 where a first emission wavelength is λ.sub.1 [nm], a second emission wavelength shorter than the first emission wavelength is λ.sub.s [nm], and a middle wavelength between the first emission wavelength and the second emission wavelength is λ.sub.c [nm]. At least one of the plurality of surface emitting lasers has an emission wavelength different from an emission wavelength of another surface emitting laser.