Patent classifications
H01S2301/20
Semiconductor light emitting array with phase modulation regions for generating beam projection patterns
The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.
Apparatus for generating a line-beam from a diode-laser array
Apparatus for generating a line-beam includes a diode-laser bar, a linear micro-lens array, and a plurality of lenses spaced apart and arranged along an optical axis. The linear micro-lens array and the lenses shape laser-radiation emitted by the diode-laser bar to form a uniform line-beam in an illumination plane. The lenses project a far-field image of the diode-laser bar onto an image plane proximate to the illumination plane. The diode-laser bar is rotated from parallel alignment with the linear micro-lens array for providing uniform line-beam illumination over a range of locations along the optical axis.
Laser system
A laser system including: A. a laser apparatus configured to output a pulse laser beam; B. an optical pulse stretcher including a delay optical path for expanding a pulse width of the pulse laser beam; and C. a phase optical element included in the delay optical path and having a function of spatially and randomly shifting a phase of the pulse laser beam. The phase optical element includes a plurality of types of cells providing different amounts of phase shift to the pulse laser beam and arranged irregularly in any direction.
LASER DEVICE WITH A BEAM CARRYING CONTROLLED ORBITAL ANGULAR MOMENTUM
A laser device is provided for generating a helical-shaped optical wave and includes: (i) a gain region located between one first end defined by a first mirror and a second end defined by an exit region, (ii) a second mirror arranged so as to form with the first mirror an optical cavity including the gain region and a gap between the exit region and the second mirror, (iii) apparatus for pumping the gain region so as to generate the optical wave, wherein the laser device further includes at least one apparatus for shaping the light intensity and/or phase profiles of the optical wave and arranged for selecting at least one rotary-symmetrical transverse mode of the optical wave, the rotary-symmetrical transverse mode being chosen between those with a radial index equal to zero and with an azimuthal index being an integer with a module higher or equal to 1.
Monolithic structured light projector
A structured light projector for generating a far-field image of light dots in a defined pattern is proposed, where the structured light projector includes a light source providing as an output a non-collimated light beam and a specialized diffractive optical element disposed to intercept the non-collimated light beam. The specialized diffractive optical element is formed to exhibit a non-uniform pattern of grating features configured to compensate for the non-planar wavefront and phase retardation of the non-collimated output beam, providing as an output of the projector an interference pattern of light dots exhibiting the desired configuration.
SEMICONDUCTOR LASER DEVICE
This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM optically coupled to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, a diffraction grating layer 6 optically coupled to the active layer 4, and a drive electrode E3 that is disposed between the cladding layer 2 and the spatial light modulator SLM and supplies an electric current to the active layer 4, and the drive electrode E3 is positioned within an XY plane and has a plurality of openings as viewed from a Z-axis direction and has a non-periodic structure.
Radial polarization thin-disk laser
A radial polarization disk laser, including a pumping source, a collimator lens, a focusing lens, a laser gain medium, a Brewster axial cone, and a output lens, which are sequentially arranged along a laser light path. An angle formed between the conical surface and the bottom surface of said Brewster axial cone is a Brewster's angle. Said laser gain medium is bonded with said bottom surface; said laser gain medium and said output lens form a laser harmonic oscillator cavity therebetween. The pumped laser light emitted by said pumping source passes through said collimator lens and said focusing lens, then is focused on the laser gain medium, and. the generated photons oscillate in said laser harmonic oscillator cavity, and then a radial polarized laser beam is finally output by said output lens.
LASER SYSTEM AND ELECTRONIC DEVICE MANUFACTURING METHOD
A laser system includes a beam shaping unit, a random phase plate, and a collimating optical system in an optical path between a solid-state laser device and an excimer amplifier. When a traveling direction of a laser beam entering the excimer amplifier is a Z direction, a discharge direction of a pair of discharge electrodes is a V direction, a direction orthogonal to the V and Z directions is an H direction, a shaping direction of the beam shaping unit corresponding to the V direction is a first direction, a shaping direction of the beam shaping unit corresponding to the H direction is a second direction, an expansion rate in the first direction is E1, and an expansion rate in the second direction is E2, the beam shaping unit expands a beam section of the laser beam such that an expansion ratio defined by E2/E1 is higher than 1.
METHOD FOR GENERATING FEMTOSECOND VORTEX BEAMS WITH HIGH SPATIAL INTENSITY CONTRAST
A method for generating femtosecond vortex beams with high spatial intensity contrast, where a noncollinearly pumped HG beam femtosecond laser generates femtosecond HG beam and a cylindrical lens mode converter converts the femtosecond HG beam to femtosecond LG vortex beam. The HG beam femtosecond laser comprises a pump source, a gain medium, a saturable absorption mirror as mode-locker, and an output coupler with a noncollinear angle between the laser beam and the pump beam in the gain medium, which enables the laser to generate pure, order-tunable femtosecond HG beams. Femtosecond vortex beams obtained after the cylindrical lens converter have high-intensity-contrast, and are topological charge-tunable.
OPTICAL FIBER STRUCTURES AND METHODS FOR VARYING LASER BEAM PROFILE
In various embodiments, the beam parameter product and/or numerical aperture of a laser beam is adjusted utilizing a step-clad optical fiber having a central core, a first cladding, an annular core, and a second cladding.