Energy storage systems are disclosed. The systems may store energy as heat in a high temperature liquid, and the heat may be converted to electricity by absorbing radiation emitted from the high temperature liquid via one or more photovoltaic devices when the high temperature liquid is transported through an array of conduits. Some aspects described herein relate to reducing deposition of sublimated material from the conduits onto the photovoltaic devices.

Energy storage systems are disclosed. The systems may store energy as heat in a high temperature liquid, and the heat may be converted to electricity by absorbing radiation emitted from the high temperature liquid via one or more photovoltaic devices when the high temperature liquid is transported through an array of conduits. Some aspects described herein relate to reducing deposition of sublimated material from the conduits onto the photovoltaic devices.

[Objective] To provide a ceramic emitter that exhibits high radiation intensity and excellent wavelength selectivity.

[Solution] A ceramic emitter includes a polycrystalline body that has a garnet structure represented by a compositional formula R.sub.3Al.sub.5O.sub.12 (R: rare-earth element) or R.sub.3Ga.sub.5O.sub.12 (R: rare-earth element) and has pores with a porosity of 20-40%. The pores have a portion where the pores are connected to one another but not linearly continuous, inside the polycrystalline body.

[Objective] To provide a ceramic emitter that exhibits high radiation intensity and excellent wavelength selectivity.

[Solution] A ceramic emitter includes a polycrystalline body that has a garnet structure represented by a compositional formula R.sub.3Al.sub.5O.sub.12 (R: rare-earth element) or R.sub.3Ga.sub.5O.sub.12 (R: rare-earth element) and has pores with a porosity of 20-40%. The pores have a portion where the pores are connected to one another but not linearly continuous, inside the polycrystalline body.

The present invention relates to an optomechanical system (1) for converting light energy, comprising an optical arrangement (40) comprising one or more optical layers (41, 42), wherein at least one of the optical layers (41,42) comprises a plurality of primary optical elements (47) to concentrate incident light (80) into transmit ted light (90), wherein the primary optical elements (47) are arranged in a two-dimensional rectangular or hexagonal array; a support layer (50); a shifting mechanism (60) for moving at least one of the optical layers (41, 42) of the optical arrangement (40) relative to the support layer (50) or vice versa; and a frame element (10) to which either the optical arrangement (40) or the support layer (50) is attached, wherein the support layer (50) comprises a plurality of primary light energy conversion elements (51) arranged in a two-dimensional array corresponding to the arrangement of the primary optical elements (47) and a plurality of secondary light energy conversion elements (52), wherein the primary light energy conversion elements (51) and the secondary light energy conversion elements (52) are capable of converting the energy of transmitted light (90) into an output energy and wherein the primary light energy conversion elements (51) and the secondary light energy conversion elements (52), differ by type, and/or surface area, and/or light conversion efficiency, and/or light conversion spectrum and wherein the shifting mechanism (60) is arranged to move at least one of the layers of the optical arrangement (40) or the support layer (50) translationally relative to the frame element (10), through one or more translation element (65, 65) in such a way that the total output power of the primary light energy conversion elements (51) and of the secondary light energy conversion elements (52) is adjustable. The invention concerns also a method for converting light energy with an optomechanical system according to the present invention

The present invention relates to an optomechanical system (1) for converting light energy, comprising an optical arrangement (40) comprising one or more optical layers (41, 42), wherein at least one of the optical layers (41,42) comprises a plurality of primary optical elements (47) to concentrate incident light (80) into transmit ted light (90), wherein the primary optical elements (47) are arranged in a two-dimensional rectangular or hexagonal array; a support layer (50); a shifting mechanism (60) for moving at least one of the optical layers (41, 42) of the optical arrangement (40) relative to the support layer (50) or vice versa; and a frame element (10) to which either the optical arrangement (40) or the support layer (50) is attached, wherein the support layer (50) comprises a plurality of primary light energy conversion elements (51) arranged in a two-dimensional array corresponding to the arrangement of the primary optical elements (47) and a plurality of secondary light energy conversion elements (52), wherein the primary light energy conversion elements (51) and the secondary light energy conversion elements (52) are capable of converting the energy of transmitted light (90) into an output energy and wherein the primary light energy conversion elements (51) and the secondary light energy conversion elements (52), differ by type, and/or surface area, and/or light conversion efficiency, and/or light conversion spectrum and wherein the shifting mechanism (60) is arranged to move at least one of the layers of the optical arrangement (40) or the support layer (50) translationally relative to the frame element (10), through one or more translation element (65, 65) in such a way that the total output power of the primary light energy conversion elements (51) and of the secondary light energy conversion elements (52) is adjustable. The invention concerns also a method for converting light energy with an optomechanical system according to the present invention

An optical device includes a nanostructure body which induces surface plasmon resonance when irradiated with light, an oxide layer which is in contact with the nanostructure body, an alloy layer which is in contact with the oxide layer and which is made of an alloy containing a first metal and a second metal that are different in work function from each other, and an n-type semiconductor which is in Schottky contact with the alloy layer.

An optical device includes a nanostructure body which induces surface plasmon resonance when irradiated with light, an oxide layer which is in contact with the nanostructure body, an alloy layer which is in contact with the oxide layer and which is made of an alloy containing a first metal and a second metal that are different in work function from each other, and an n-type semiconductor which is in Schottky contact with the alloy layer.

A PV device comprises a first mirror comprising a reflectance of higher than 50%; a second mirror interface; and an optical cavity positioned between the first mirror and the second mirror interface and comprising at least one IC stage. Each of the at least one IC stage comprises a conduction band; a valence band; a hole barrier comprising a first band gap; an absorption region coupled to the hole barrier, comprising a second band gap that is less than the first band gap, and configured to absorb photons; and an electron barrier coupled to the absorption region so that the absorption region is positioned between the hole barrier and the electron barrier. The electron barrier comprises a third band gap that is greater than the second band gap. The PV device is configured to operate at a forward bias voltage with a net photon absorption for generating an electric output.

A PV device comprises a first mirror comprising a reflectance of higher than 50%; a second mirror interface; and an optical cavity positioned between the first mirror and the second mirror interface and comprising at least one IC stage. Each of the at least one IC stage comprises a conduction band; a valence band; a hole barrier comprising a first band gap; an absorption region coupled to the hole barrier, comprising a second band gap that is less than the first band gap, and configured to absorb photons; and an electron barrier coupled to the absorption region so that the absorption region is positioned between the hole barrier and the electron barrier. The electron barrier comprises a third band gap that is greater than the second band gap. The PV device is configured to operate at a forward bias voltage with a net photon absorption for generating an electric output.