A temperature-controlled RF resonator. The resonator includes an insulating thermal enclosure within which are implemented: at least one resonant element configured to deliver an RF output signal when supplied with an RF input signal; at least one heating element configured to supply thermal energy within the thermal enclosure when the at least one heating element is powered by an LF electric power signal; and at least one temperature sensor configured to deliver an LF electric measurement signal as a function of the temperature inside the thermal enclosure. Such an RF resonator has at least one input/output port crossing the insulating thermal enclosure and propagating at least: one signal from among the RF signals; and another signal from among the LF electric signals.

A temperature-controlled RF resonator. The resonator includes an insulating thermal enclosure within which are implemented: at least one resonant element configured to deliver an RF output signal when supplied with an RF input signal; at least one heating element configured to supply thermal energy within the thermal enclosure when the at least one heating element is powered by an LF electric power signal; and at least one temperature sensor configured to deliver an LF electric measurement signal as a function of the temperature inside the thermal enclosure. Such an RF resonator has at least one input/output port crossing the insulating thermal enclosure and propagating at least: one signal from among the RF signals; and another signal from among the LF electric signals.

The present invention relates to a frequency generator arrangement having an oscillator for generating an oscillator signal having an oscillator frequency and an oscillator output for outputting the oscillator signal, the frequency generator arrangement further comprising a frequency multiplier coupled and/or connected to an oscillator output for generating an output signal of the frequency generator arrangement having a multiplier frequency corresponding to a multiple of the oscillator frequency, wherein the frequency multiplier comprises a frequency multiplier core directly causative of the frequency multiplication, the frequency multiplier core having a power supply, and the frequency generator arrangement having a control input for controlling the power supply to the frequency multiplier core, whereby an output power of the output signal is adjustable by controlling the power supply to the frequency multiplier core.

The present invention relates to a frequency generator arrangement having an oscillator for generating an oscillator signal having an oscillator frequency and an oscillator output for outputting the oscillator signal, the frequency generator arrangement further comprising a frequency multiplier coupled and/or connected to an oscillator output for generating an output signal of the frequency generator arrangement having a multiplier frequency corresponding to a multiple of the oscillator frequency, wherein the frequency multiplier comprises a frequency multiplier core directly causative of the frequency multiplication, the frequency multiplier core having a power supply, and the frequency generator arrangement having a control input for controlling the power supply to the frequency multiplier core, whereby an output power of the output signal is adjustable by controlling the power supply to the frequency multiplier core.

Embodiments may relate to a structure to be used in a neural network. A first column and a second column, both of which are to couple with a substrate. A capacitor structure may be electrically coupled with the first column. An insulator-metal transition (IMT) structure may be coupled with the first column such that the capacitor structure is electrically positioned between the IMT structure and the first column. A resistor structure may further be electrically coupled with the IMT structure and the second column such that the resistor structure is electrically positioned between the second column and the IMT structure. Other embodiments may be described or claimed.

Embodiments may relate to a structure to be used in a neural network. A first column and a second column, both of which are to couple with a substrate. A capacitor structure may be electrically coupled with the first column. An insulator-metal transition (IMT) structure may be coupled with the first column such that the capacitor structure is electrically positioned between the IMT structure and the first column. A resistor structure may further be electrically coupled with the IMT structure and the second column such that the resistor structure is electrically positioned between the second column and the IMT structure. Other embodiments may be described or claimed.

A semiconductor package structure includes an organic substrate having a first surface, a first recess depressed from the first surface, a first chip over the first surface and covering the first recess, thereby defining a first cavity enclosed by a back surface of the first chip and the first recess, and a second chip over the first chip. The first cavity is an air cavity or a vacuum cavity.

A semiconductor package structure includes an organic substrate having a first surface, a first recess depressed from the first surface, a first chip over the first surface and covering the first recess, thereby defining a first cavity enclosed by a back surface of the first chip and the first recess, and a second chip over the first chip. The first cavity is an air cavity or a vacuum cavity.

Accordingly the embodiments herein provide a method for fabricating a neuron oscillator (200a). The neuron oscillator (200a) includes a thermal insulating device connected with a resistor and a capacitor in series to produce self-sustained oscillations, where the resistor and the capacitor are arranged in parallel manner. The neuron oscillator (200a) eliminates a requirement of an additional compensation circuitry for a consistent performance over a time under heating issues. Additionally, an ON/OFF ratio of the neuron oscillator (200a) improves to a broader resistor range. Further, a presence of tunable synaptic memristor functionality of the neuron oscillator (200a) provides a reduced fabrication complexity to a large scale ONN. An input voltage required for the neuron oscillator (200a) is low (2-3 V) which makes it suitable to use with existing circuitries without using any additional converters. Additionally, an amplitude of the oscillations is a significant fraction of an applied bias which eliminates a need for an amplification.

Accordingly the embodiments herein provide a method for fabricating a neuron oscillator (200a). The neuron oscillator (200a) includes a thermal insulating device connected with a resistor and a capacitor in series to produce self-sustained oscillations, where the resistor and the capacitor are arranged in parallel manner. The neuron oscillator (200a) eliminates a requirement of an additional compensation circuitry for a consistent performance over a time under heating issues. Additionally, an ON/OFF ratio of the neuron oscillator (200a) improves to a broader resistor range. Further, a presence of tunable synaptic memristor functionality of the neuron oscillator (200a) provides a reduced fabrication complexity to a large scale ONN. An input voltage required for the neuron oscillator (200a) is low (2-3 V) which makes it suitable to use with existing circuitries without using any additional converters. Additionally, an amplitude of the oscillations is a significant fraction of an applied bias which eliminates a need for an amplification.