A semiconductor device includes a source, a drain, and a channel electrically connected to the source and the drain. The channel has a channel length from the drain to the source which is less than or equal to an electron mean free path of the channel material. A first gate has two arms, each extending between the drain and the source (i.e., at least a portion of the distance between the source and the drain). Each arm of the first gate is disposed proximate to a corresponding first and second edge of the channel. Each arm of the first gate has a periodic profile along an inner boundary, wherein the periodic profiles of each arm are offset from each other such that a distance between the arms is constant. A Bloch voltage applied to the first gate will reduce the effective channel with such that Bloch resonance conditions are met.

A semiconductor device includes a source, a drain, and a channel electrically connected to the source and the drain. The channel has a channel length from the drain to the source which is less than or equal to an electron mean free path of the channel material. A first gate has two arms, each extending between the drain and the source (i.e., at least a portion of the distance between the source and the drain). Each arm of the first gate is disposed proximate to a corresponding first and second edge of the channel. Each arm of the first gate has a periodic profile along an inner boundary, wherein the periodic profiles of each arm are offset from each other such that a distance between the arms is constant. A Bloch voltage applied to the first gate will reduce the effective channel with such that Bloch resonance conditions are met.

Temperature compensated oscillators are provided. The oscillator comprises an oscillator circuit and a temperature compensation module. The temperature compensation module reduces temperature induced errors in the frequency of oscillation of the oscillator by providing a temperature compensation signal to the oscillator circuit based on a temperature sensor output. The temperature compensation module comprises a low pass filter configured to reduce noise in the temperature compensation signal. The low pass filter is such that, using Laplace representations of transfer functions, the transfer function H(s) of the filter is equivalent to the transfer function of a closed loop configuration in which a module having an open loop transfer function G(s) is configured to generate an output from the closed loop configuration by applying the open loop transfer function G(s) to an error between an input to the closed loop configuration and the output from the closed loop configuration.

A clock oscillator includes with a pullable BAW oscillator to generate an output signal with a target frequency. The BAW oscillator is based on a BAW resonator and voltage-controlled variable load capacitance, responsive to a capacitance control signal to provide a selectable load capacitance. An oscillator driver (such as a differential negative gm transconductance amplifier), is coupled to the BAW oscillator to provide an oscillation drive signal. The BAW oscillator is responsive to the oscillation drive signal to generate the output signal with a frequency based on the selectable load capacitance. The oscillator driver can include a bandpass filter network with a resonance frequency substantially at the target frequency.

A clock oscillator includes with a pullable BAW oscillator to generate an output signal with a target frequency. The BAW oscillator is based on a BAW resonator and voltage-controlled variable load capacitance, responsive to a capacitance control signal to provide a selectable load capacitance. An oscillator driver (such as a differential negative gm transconductance amplifier), is coupled to the BAW oscillator to provide an oscillation drive signal. The BAW oscillator is responsive to the oscillation drive signal to generate the output signal with a frequency based on the selectable load capacitance. The oscillator driver can include a bandpass filter network with a resonance frequency substantially at the target frequency.

A CMOS gain element is disclosed herein. Also disclosed herein are splitters, comprising the CMOS gain element, and local oscillator distribution circuitry comprising the splitters and the CMOS gain elements. Semiconductor devices comprising the local oscillator distribution circuitry may have smaller footprints and reduced power consumption relative to prior art devices.

A CMOS gain element is disclosed herein. Also disclosed herein are splitters, comprising the CMOS gain element, and local oscillator distribution circuitry comprising the splitters and the CMOS gain elements. Semiconductor devices comprising the local oscillator distribution circuitry may have smaller footprints and reduced power consumption relative to prior art devices.

A class-E power oscillator (PO) is disclosed. The class-E PO includes a first inductor, a switch, a first capacitor, a resonant circuit, and a feedback network. The first inductor is coupled in series to a first power supply. The switch is connected between the first inductor and a primary common node. The first capacitor is connected between the first inductor and the primary common node. The resonant circuit includes a second inductor, a second capacitor, and a resistor. The second inductor is connected between the first inductor and the primary common node. The second capacitor is connected between the first inductor and the primary common node, and is coupled in series to the second inductor. The resistor is connected between the first inductor and the primary common node, and is coupled in series to the second inductor. The feedback network is connected between the switch and a feedback node. The feedback node is located between the second inductor and the second capacitor. The feedback network is configured to periodically turn the switch on and off based on a resonance frequency of the resonant circuit.

A class-E power oscillator (PO) is disclosed. The class-E PO includes a first inductor, a switch, a first capacitor, a resonant circuit, and a feedback network. The first inductor is coupled in series to a first power supply. The switch is connected between the first inductor and a primary common node. The first capacitor is connected between the first inductor and the primary common node. The resonant circuit includes a second inductor, a second capacitor, and a resistor. The second inductor is connected between the first inductor and the primary common node. The second capacitor is connected between the first inductor and the primary common node, and is coupled in series to the second inductor. The resistor is connected between the first inductor and the primary common node, and is coupled in series to the second inductor. The feedback network is connected between the switch and a feedback node. The feedback node is located between the second inductor and the second capacitor. The feedback network is configured to periodically turn the switch on and off based on a resonance frequency of the resonant circuit.

A semiconductor package structure includes an organic substrate having a first surface, a first recess depressed from the first surface, a first chip over the first surface and covering the first recess, thereby defining a first cavity enclosed by a back surface of the first chip and the first recess, and a second chip over the first chip. The first cavity is an air cavity or a vacuum cavity.