H03B5/18

SEMICONDUCTOR DEVICE, DIGITALLY CONTROLLED OSCILLATOR, AND CONTROL METHOD OF SEMICONDUCTOR DEVICE
20210391827 · 2021-12-16 ·

A semiconductor device according to the present embodiment includes a plurality of switching elements and a plurality of variable capacitance elements. The switching elements are switching elements connected in series between a first control terminal and a second control terminal and plural types of capacitance control signals can be supplied to the first control terminal and the second control terminal. The variable capacitance elements have capacitance control terminals connected to corresponding one ends of the switching elements, respectively.

APPARATUS AND METHODS FOR ROTARY TRAVELING WAVE OSCILLATORS

Apparatus and methods for rotary traveling wave oscillators (RTWOs) are disclosed. In certain embodiments, an RTWO system include an RTWO ring that carries a traveling wave, a plurality of selectable capacitors distributed around the RTWO ring and each operable in a selected state and an unselected state, and a decoder system that controls selection of the plurality of selectable capacitors based on a frequency tuning code. The frequency tuning code includes a fine tuning code and a coarse tuning code, and the decoder system is operable to maintain a constant number of capacitors that toggle state for each value of the fine tuning code.

Tunable oscillator device

The present disclosure relates to an oscillator device (15) comprising an amplifier unit (16) and a tunable waveguide resonator (1) which in turn comprises a rectangular waveguide part (2) having electrically conducting inner walls (3) and a first waveguide port (4). The amplifier unit (16) is arranged to be electrically connected to the waveguide resonator (1) via the first waveguide port (4) by means of a first connector (17). The waveguide resonator (1) comprises at least one tuning element (6) positioned within the waveguide part (2), wherein each tuning element (6) comprises an electrically conducting body (7) and a holding rod (8a, 8b). The holding rod (8a, 8b) is attached to the electrically conducting body (7) and is movable from the outside of the waveguide resonator (1) such that the electrically conducting body (7) can be moved between a plurality of positions within the waveguide part (2) by means of the holding rod (8a, 8b).

OSCILLATOR CIRCUIT

An oscillator circuit includes an oscillator transistor (Q1) having respective first, second, and control terminals, the oscillator transistor being arranged to generate a microwave oscillating signal at the first terminal. A surface integrated waveguide resonator (Y1) is connected to the second terminal of the oscillator transistor (Q1). An active bias circuit portion (202) including a negative feedback arrangement is between the first terminal of the oscillator transistor (Q1) and the control terminal of the oscillator transistor (Q1), the active bias circuit portion being arranged to supply a bias current to the control terminal of the oscillator transistor (Q1). The bias current is dependent on a voltage at the first terminal of the oscillator transistor (Q1) multiplied by a negative gain.

High frequency push-push oscillator

A high frequency push-push oscillator is disclosed. The high frequency push-push oscillator includes a resonant circuit, including tank transmission lines or an inductor capacitor (LC) tank circuit, for generating a differential signal having a resonant frequency, and a Gm-core circuit for converting the differential signal to an output signal having an output frequency that is higher than the resonant frequency. The Gm-core circuit includes cross-coupled first and second transistors having first and second gates, drains, and sources, respectively, and first and second gate transmission lines. The first and second drains are in electrical communication with the resonant circuit. The first gate transmission line is joined with the first gate and the resonant circuit and the second gate transmission line is joined with the second gate and the resonant circuit. The Gm-core circuit includes a differential transmission line positioned between the first and second gates of the first and second transistors.

Frequency tuning method in rotary-based oscillator

The present disclosure relates to an oscillator apparatus comprising a differential transmission line forming a closed loop, a plurality of active core components that are electrically connected to the differential transmission line and that are configured to compensate for loss in the differential transmission line, a plurality of tuning elements that are electrically coupled with the differential transmission line, and a processor configured to control each tuning element of the plurality of tuning elements to activate or deactivate such that an effective electrical length of the differential transmission line is changed.

Frequency tuning method in rotary-based oscillator

The present disclosure relates to an oscillator apparatus comprising a differential transmission line forming a closed loop, a plurality of active core components that are electrically connected to the differential transmission line and that are configured to compensate for loss in the differential transmission line, a plurality of tuning elements that are electrically coupled with the differential transmission line, and a processor configured to control each tuning element of the plurality of tuning elements to activate or deactivate such that an effective electrical length of the differential transmission line is changed.

LC resonance element and resonance element array
11328861 · 2022-05-10 · ·

An LC resonance element (10) includes a dielectric film (12), a common electrode (11) formed of a thin-film conductor on a lower surface (12D) of the dielectric film, a first capacitor (C1) and a second capacitor (C2) that are connected in series via the common electrode (11) and constitute a thin-film capacitor (TC), first and second external connection terminals (14A, 14B) formed on an upper surface (12U) of the dielectric film, a thin-film conductive wire (16) constituting a thin-film inductor (TL), a first upper electrode (13A) of the first capacitor formed on the upper surface (12U), and a second upper electrode (13B) of the second capacitor formed on the upper surface (12U). The thin-film conductive wire (16) is formed in a region (R2) located on the upper surface (12U) of the dielectric film and outside the common electrode (11) in plan view.

Techniques for manipulation of two-qubit quantum states and related systems and methods

According to some aspects, a method is provided of operating a system that includes a multi-level quantum system dispersively coupled to a first quantum mechanical oscillator and dispersively coupled to a second quantum mechanical oscillator, the method comprising applying a first drive waveform to the multi-level quantum system, applying one or more second drive waveforms to the first quantum mechanical oscillator, and applying one or more third drive waveforms to the second quantum mechanical oscillator.

DIGITAL RANGE GATED RADIO FREQUENCY SENSOR
20220000384 · 2022-01-06 · ·

A digitally implemented radio frequency sensor for physiology sensing may be configured to generate oscillation signals for emitting radio frequency pulses for range gated sensing. The sensor may include a radio frequency transmitter configured to emit the pulses and a receiver configured to receive reflected ones of the emitted radio frequency pulses under control of a microcontroller. The received pulses may be processed by the microcontroller to detect physiology characteristics such as motion, sleep, respiration and/or heartbeat. The microcontroller may be configured to generate timing pulses such as with a pulse generator for transmission of radio frequency sensing pulses. The microprocessor may sample received signals, such as in phase and quadrature phase analogue signals, to implement digital demodulation and baseband filtering of the received signals.