One example includes a device that is comprised of a pre-power amplifier, a power amplifier, a signal path, and a dynamic bias circuit. The pre-power amplifier amplifies an input signal and outputs a first amplified signal. The power amplifier receives the first amplified signal and amplifies the first amplified signal based on a dynamic bias signal to produce a second amplified signal at an output thereof. The signal path is coupled between an output of the pre-power amplifier and an input of the power amplifier. The dynamic bias circuit monitors the first amplified signal, generates the dynamic bias signal, and outputs the dynamic bias into the signal path.

An RF power detector adapted to detect an RF power of an RF signal, includes, in part, an antenna adapted to receive the RF signal, a narrow-band RF power converter adapted to convert the RF signal to a DC signal, an accelerometer, and a magnetometer. The accelerometer and magnetometer are adapted to determine the orientation and location of the power detector. The power detector optionally includes a gyroscope. The narrow-band RF power converter may be a rectifier tuned to the frequency of the RF signal. The power detector optionally includes an indicator adapted to provide information representative of the amount of the DC power of the DC signal, as well as position and orientation of the power detector. The power detector may be adapted to be inserted into a mobile device so as to provide the information about the amount of DC power, orientation and position to the mobile device.

Apparatus and methods for a low-load-modulation power amplifier are described. Low-load-modulation power amplifiers can include multiple amplifiers connected in parallel to amplify a signal that has been divided into parallel circuit branches. One of the amplifiers can operate as a main amplifier in a first amplification class and the remaining amplifiers can operate as peaking amplifiers in a second amplification class. The main amplifier can see low modulation of its load between the power amplifier's fully-on and fully backed-off states. Improvements in bandwidth and drain efficiency over conventional Doherty amplifiers are obtained.

Embodiments of RF amplifiers and packaged RF amplifier devices each include an amplification path with a transistor die, and an output-side impedance matching circuit having a T-match circuit topology. The output-side impedance matching circuit includes a first inductive element (e.g., first wirebonds) connected between the transistor output terminal and a quasi RF cold point node, a second inductive element (e.g., second wirebonds) connected between the quasi RF cold point node and an output of the amplification path, and a first capacitance connected between the quasi RF cold point node and a ground reference node. The RF amplifiers and devices also include a baseband termination circuit connected to the quasi RF cold point node, which includes an envelope resistor, an envelope inductor, and an envelope capacitor coupled in series between the quasi RF cold point node and the ground reference node.

A power amplifier module includes a first substrate and a second substrate, at least part of the second substrate being disposed in a region overlapping the first substrate. The second substrate includes a first amplifier circuit and a second amplifier circuit. The first substrate includes a first transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; a second transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; and multiple first conductors disposed in a row between the first transformer and the second transformer, each of the multiple first conductors extending from the wiring layer on a first main surface to the wiring layer on a second main surface of the substrate.

A multi-band power amplifier module includes at least one transmission input terminal, at least one power amplifier circuit that receives a first transmission signal and a second transmission signal through the at least one transmission input terminal, a first filter circuit that allows the first transmission signal to pass therethrough, a second filter circuit that allows the second transmission signal to pass therethrough, at least one transmission output terminal through which the first and second transmission signals output from the first and second filter circuits are output, a transmission output switch that outputs each of the first and second transmission signals output from the at least one power amplifier circuit to the first filter circuit or the second filter circuit, and a first tuning circuit that adjusts impedance matching between the at least one power amplifier circuit and the at least one transmission output terminal.

Aspects of the subject disclosure may include a power splitter. The power splitter can include a first splitter branch having a first amplifier with passive components, a second splitter branch having a second amplifier with passive components. The first splitter branch is substantially electrically isolated from the second splitter branch by configuring the first and second splitter branches to have similar phase delays. Outputs of the power splitter can be electrically coupled to the multi-stage amplifier. The power splitter can be manufactured on a single semiconductor die or integrally formed on the same semiconductor die with other circuits such as the multi-stage amplifier. Other embodiments are disclosed.

Envelope tracking power amplifiers with advanced gain shaping are provided. In certain implementations, a power amplifier system includes a power amplifier that amplifies a radio frequency (RF) signal and an envelope tracker that controls a voltage level of a supply voltage of the power amplifier based on an envelope of the RF signal. The power amplifier system further includes a gain shaping circuit that generates a gain shaping current that changes with the voltage level of the supply voltage from the envelope tracker. For example, the gain shaping circuit can include an analog look-up table (LUT) mapping a particular voltage level of the supply voltage to a particular current level of gain shaping current. Additionally, the gain shaping circuit biases the power amplifier based on the gain shaping current.

Provided is an analog front-end circuit for a bioelectric sensor, which includes two feedforward amplifiers and respective feedback networks, an output common-mode voltage detector, an error amplifier, a leakage current compensator and resistance voltage dividers. Common-mode components of various types of leakage currents can be effectively suppressed.

A system for adapting the voltage of a drain of a power stage includes at least two transmission paths T.sub.Xa, a transmission path comprising a resistive element (1.sub.n), a phase control module (2.sub.n), and a power stage (3.sub.n) at the output of which a radiating element (E.sub.n) is arranged, comprising at least: a device (5.sub.n) for determining the value of a reflected power P.sub.r, the value of an incident power P.sub.i in a power stage, and the ratio of the powers R, an analogue device (6.sub.n) configured so as to pulse width-modulate the difference signal, a switching cell (7.sub.n) receiving a low-power PWM signal and designed to generate a power signal PWM.sub.a that is transformed, by a low-pass filter (8.sub.n), into a bias signal for biasing the power stage in accordance with a predefined bias control law.