An analog front-end circuit capable of dynamically adjusting gain includes a programmable gain amplifier (PGA) circuit, a sensor, a calculation circuit, a gain coarse control circuit and a gain fine control circuit. The PGA circuit includes an amplifier, a gain coarse adjustment circuit and a gain fine adjustment circuit. The gain coarse adjustment circuit is controlled by a coarse control signal, and a gain is adjusted in a coarse step according to an initial gain. The gain fine adjustment circuit is controlled by a fine control signal in a data mode, and the gain is adjusted in a fine step. The calculation circuit calculates a primary gain adjustment and a secondary gain adjustment. The gain coarse control circuit generates the coarse control signal according to the primary gain adjustment, and the gain fine control circuit generates the fine control signal according to the secondary gain adjustment.

An analog front-end circuit capable of dynamically adjusting gain includes a programmable gain amplifier (PGA) circuit, a sensor, a calculation circuit, a gain coarse control circuit and a gain fine control circuit. The PGA circuit includes an amplifier, a gain coarse adjustment circuit and a gain fine adjustment circuit. The gain coarse adjustment circuit is controlled by a coarse control signal, and a gain is adjusted in a coarse step according to an initial gain. The gain fine adjustment circuit is controlled by a fine control signal in a data mode, and the gain is adjusted in a fine step. The calculation circuit calculates a primary gain adjustment and a secondary gain adjustment. The gain coarse control circuit generates the coarse control signal according to the primary gain adjustment, and the gain fine control circuit generates the fine control signal according to the secondary gain adjustment.

A power amplifier module includes a substrate including, in an upper surface of the substrate, an active region and an element isolation region. The power amplifier module further includes a collector layer, a base layer, and an emitter layer that are stacked on the active region; an interlayer insulating film that covers the collector layer, the base layer, and the emitter layer; a pad that is thermally coupled to the element isolation region; and an emitter bump that is disposed on the interlayer insulating film, electrically connected to the emitter layer through a via hole provided in the interlayer insulating film, and electrically connected to the pad. In plan view, the emitter bump partially overlaps an emitter region which is a region of the emitter layer and through which an emitter current flows.

A power amplifier device includes: a first power supply terminal for inputting a first power supply voltage; a first transistor for power amplification that (i) includes a first gate to which a bias voltage is applied, and (ii) is supplied with power from the first power supply terminal; a second power supply terminal for inputting a second power supply voltage lower than the first power supply voltage; a second transistor for monitoring that (i) includes a second gate to which the bias voltage is applied, (ii) is supplied with power from the first power supply terminal or the second power supply terminal, and (iii) imitates an operation of the first transistor; and a bias circuit that is supplied with power from the second power supply terminal and generates and adjusts the bias voltage according to a drain current or a source current of the second transistor.

This application provides a chip apparatus, including a die, a first bond pad, a second bond pad, and a first solder pad. The first bond pad and the second bond pad are disposed on an upper surface of the die. A first power module and a second power module are disposed in the die. The first power module is coupled to the first bond pad. The second power module is coupled to the second bond pad. The first solder pad is separately coupled to an external power supply of the chip apparatus, the first bond pad, and the second bond pad. According to the foregoing technical solution, isolation between different power modules is improved, and noise transmitted on a power supply path can be better filtered out. This improves power supply noise performance of the chip apparatus.

A circuit comprises an amplifier network including a first amplifier and a second amplifier and a first transistor having a first base. The first transistor is thermally isolated from the second amplifier. The circuit further comprises a second transistor having a second base. The second transistor is thermally linked to the second amplifier. The circuit further comprises coupling circuitry configured to couple the first base to the second base.

A circuit comprises an amplifier network including a first amplifier and a second amplifier and a first transistor having a first base. The first transistor is thermally isolated from the second amplifier. The circuit further comprises a second transistor having a second base. The second transistor is thermally linked to the second amplifier. The circuit further comprises coupling circuitry configured to couple the first base to the second base.

Apparatus and methods for power amplifiers with positive envelope feedback are provided herein. In certain implementations, a power amplifier system includes a power amplification stage that amplifies a radio frequency signal, at least one envelope detector that generates one or more detection signals indicating an output signal envelope of the power amplification stage, and a wideband feedback circuit that provides positive envelope feedback to a bias of the power amplification stage based on the one or more detection signals. The power amplifier system further includes a supply modulator that controls a voltage level of a supply voltage of the power amplification stage based on the one or more detection signals such that the supply voltage is modulated with the output signal envelope through positive envelope feedback.

An apparatus comprising: a cascode arrangement comprising two or more transistors, the cascode arrangement coupled between a supply voltage terminal for receiving a supply voltage from a battery and a ground terminal, and a bias voltage generator configured to provide a bias voltage to at least one of the two or more transistors of the cascode arrangement to bias the cascode arrangement, the bias voltage generator further configured to increase the bias voltage with increasing supply voltage at a first rate over a first supply voltage range and increase the bias voltage with increasing supply voltage at a second rate, greater than the first rate, over a second supply voltage range, wherein the second supply voltage range comprises a range of voltages greater than the first supply voltage range.

A power amplifier comprises a first transistor, a first transformer, a first variable resistor, a first bias circuit and coupling circuitry configured to couple the first transformer, a first end of the first variable resistor, and a collector of the first transistor at a first node, the first transformer and a second end of the first variable resistor at a second node, and the bias circuit and a base of the first transistor at a third node.