A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.

An outphasing amplifier includes a first class-E power amplifier having an output coupled to a first conductor and an input receiving a first RF drive signal. A first reactive element is coupled between the first conductor and a second conductor. A second reactive element is coupled between the second conductor and a third conductor. A second class-E power amplifier includes an output coupled to a fourth conductor and an input coupled to a second RF drive signal, a third reactive element coupled between the second and fourth conductors. Outputs of the first and second power amplifiers are combined by the first, second and third reactive elements to produce an output current in a load. An efficiency enhancement circuit is coupled between the first and fourth conductors to improve power efficiency at back-off power levels. Power enhancement circuits are coupled to the first and fourth conductors, respectively.

Systems and method for improving operation of a radio frequency system are provided. One embodiment includes a switching power amplifier that outputs an amplified analog electrical signal based on an input electrical signal and voltage of an envelope voltage supply rail. The switching power amplifier includes a first transistor with a gate that receives the input electrical signal, a source electrically coupled to the envelope voltage supply rail, and a drain electrically coupled to an output of the switching power amplifier; a second transistor with a gate that receives the input electrical signal, a source electrically coupled to ground, and a drain electrically coupled to the output; and a third transistor with a gate that receives the input electrical signal, a drain electrically coupled to the envelope voltage supply rail, and a source electrically coupled to an output of another switching power amplifier.

A method of designing a microwave filter using a computerized filter optimizer, comprises generating a filter circuit design in process (DIP) comprising a plurality of circuit elements having a plurality of resonant elements and one or more non-resonant elements, optimizing the DIP by inputting the DIP into the computerized filter optimizer, determining that one of the plurality of circuit elements in the DIP is insignificant, removing the one insignificant circuit element from the DIP, deriving a final filter circuit design from the DIP, and manufacturing the microwave filter based on the final filter circuit design.

Broadly speaking, embodiments of the present techniques provide an amplification circuit comprising a sense amplifier and at least one Correlated Electron Switch (CES) configured to provide a signal to the sense amplifier. The sense amplifier outputs an amplified version of the input signal depending on the signal provided by the CES element. The signal provided by the CES element depends on the state of the CES material. The CES element provides a stable impedance to the sense amplifier, which may improve the reliability of reading data from the bit line, and reduce the number of errors introduced during the reading.

An integrated circuit includes a first amplifier and a second amplifier. A first impedance matching circuit is coupled to the first amplifier, a first charge pump, and a single MEMS transducer. A second impedance matching circuit is coupled to the second amplifier, a second charge pump, and to the single MEMS transducer. A first capacitive load as measured at an input of first amplifier, and a second capacitive load as measured at an input of the second amplifier exist. The first capacitive load and the second capacitive load are balanced with respect to each other. A single pressure change causes the single MEMS transducer to create a first electrical signal and a second electrical signal. Both the first electrical signal and the second electrical signal are matched or approximately matched in magnitude, and 180 degrees or approximately 180 degrees out of phase with respect to each other.

A power semiconductor module includes at least one upper arm provided between a positive electrode line and a node and including a power semiconductor device and a freewheeling diode connected in parallel, at least one lower arm provided between a negative electrode line and the node and including a power semiconductor device and a freewheeling diode connected in parallel, and a snubber circuit provided between the positive electrode line and the negative electrode line. The snubber circuit includes a snubber capacitor and a snubber resistor connected in series. At least one control terminal outputs a voltage representing the temperature of the snubber resistor or a voltage related to the temperature of the snubber resistor to a driver that drives the power semiconductor device.

A class-D amplifier includes measurement of speaker current via the low-side drive transistors of the amplifier. In one embodiment, a class-D amplifier includes two high-side transistors, two low-side transistors, a first sense resistor, a second sense resistor, and a sigma delta analog to digital converter (σΔ ADC). The two high-side transistors and two low-side transistors are connected as a bridge to drive a bridge tied speaker. The first sense resistor is connected between a first of the low-side transistors and a low-side reference voltage. The second sense resistor is connected between a second of the low-side transistors and the low-side reference voltage. The ΣΔ ADC is coupled to the bridge to measure voltage across the first sense resistor and the second sense resistor.

An amplification interface includes first and second differential input terminals, first and second differential output terminals providing first and second output voltages defining a differential output signal, and first and second analog integrators coupled between the first and second differential input terminals and the first and second differential output terminals, the first and second analog integrators being resettable by a reset signal. A control circuit generates the reset signal such that the first and second analog integrators are periodically reset during a reset interval and activated during a measurement interval, receives a control signal indicative of offsets in the measurement sensor current and the reference sensor current, and generates a drive signal as a function of the control signal. First and second current generators coupled first and second compensation circuits to the first and second differential input terminals as a function of a drive signal.

Disclosed are a slew boost amplifier and a display driver having the same, which include a first current generation circuit configured to apply a first current to an upper current mirror circuit, a second current generation circuit configured to apply a second current to a lower current mirror circuit, and a comparison circuit configured to detect a difference between an input voltage and an output voltage and to apply the first current when the difference is greater than or equal to a first predetermined threshold and the second current generation circuit to apply the second current when the difference is less than a second predetermined threshold.