Patent classifications
H03F3/72
RECONFIGURABLE AMPLIFIER
A reconfigurable amplifier includes a first transistor having a gate coupled to an input of the reconfigurable amplifier, and a source coupled to a ground. The reconfigurable amplifier also includes a gate control circuit, and a second transistor having a gate coupled to the gate control circuit, a source coupled to a drain of the first transistor, and a drain coupled to an output of the reconfigurable amplifier, wherein the gate control circuit is configured to output a bias voltage to the gate of the second transistor in a cascode mode, and output a switch voltage to the gate of the second transistor in a non-cascode mode. The reconfigurable amplifier further includes a load coupled to the output of the reconfigurable amplifier.
Gain Stabilization
An apparatus is disclosed for gain stabilization. In an example aspect, the apparatus includes an amplifier and a gain-stabilization circuit. The amplifier has a gain that is based on a bias voltage and an amplification control signal. The gain- stabilization circuit is coupled to the amplifier and includes a replica amplifier. The replica amplifier has a replica gain that is based on the bias voltage and the amplification control signal. The gain-stabilization circuit is configured to adjust at least one of the bias voltage or the amplification control signal based on a gain error associated with the replica amplifier.
Acoustic wave device, radio-frequency front-end circuit, and communication apparatus
An acoustic wave device includes a laminated film on a support substrate and inside a portion of an outer edge of the support substrate in plan view and including a piezoelectric thin film, an IDT electrode on the laminated film, an insulating layer on the support substrate and the laminated film and extending from a region above the support substrate to a region above the laminated film, a connecting electrode on the insulating layer and electrically connected to the IDT electrode, and an external connection terminal electrically connected to the connecting electrode and disposed directly on or above the connecting electrode and outside a region where the laminated film is on the support substrate. A principal surface of the support substrate on the laminated film side includes a recess at an outer edge of the laminated film, and the recess is covered with the insulating layer.
Source switch split LNA design with thin cascodes and high supply voltage
A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs). Cascode circuits, each having a “common source” configured input FET and a “common gate” configured output FET, serve as the LNAs. An amplifier-branch control switch, configured to withstand relatively high voltage differentials by means of a relatively thick gate oxide layer and coupled between a terminal of the output FET and a power supply, controls the ON and OFF state of each LNA while enabling use of a relatively thin gate oxide layer for the output FETs, thus improving LNA performance. Some embodiments may include a split cascode amplifier and/or a power amplifier.
Amplifier
Provided is an amplifier that includes a first transistor including a gate terminal to which an applied input signal is input, where a current depending on the applied input signal flows through the first transistor. A gate terminal of a second transistor is connected to a load section, and a current depending on a change in a voltage of the drain terminal of the first transistor flows through the second transistor. A source terminal of the first transistor and a drain terminal of the second transistor are connected in common to a first resistance, and the current from the first transistor and the current from the second transistor flow through the first resistance. A third transistor supplies a current approximately equal to the current of the second transistor. The current supplied by the third transistor is output from an output end.
Variable gain amplifier
A variable gain amplifier includes a first transistor group which is connected to an input terminal and an output terminal, and which amplifies a signal from the input terminal to output the amplified signal to the output terminal; a second transistor group connected to the input terminal; a third transistor group connected to the output terminal; and a controller configured to control the first transistor group, the second transistor group, and the third transistor group so that a total number of the number of transistors to be turned on in the first transistor group and the second transistor group is kept at a constant value, and total numbers of transistors to be turned on in the first transistor group and in the third transistor group are the same.
Amplifier with adjustable high-frequency gain using varactor diodes
The detection matrix for an Orthogonal Differential Vector Signaling code is typically embodied as a transistor circuit with multiple active signal inputs. An alternative detection matrix approach uses passive resistor networks to sum at least some of the input terms before active detection.
Amplifier with adjustable high-frequency gain using varactor diodes
The detection matrix for an Orthogonal Differential Vector Signaling code is typically embodied as a transistor circuit with multiple active signal inputs. An alternative detection matrix approach uses passive resistor networks to sum at least some of the input terms before active detection.
Radio-frequency circuit and communication device
A radio-frequency circuit is capable of simultaneously transmitting a radio-frequency signal of a middle high band group (MHB) including B1 and B3, and a radio-frequency signal of a ultra-high band group (UHB) including n77, and includes: a first transfer circuit that transfers the MHB radio-frequency signal and a radio-frequency signal of a low band group (LB); and a second transfer circuit that transfers the UHB radio-frequency signal. The first transfer circuit includes: a power amplifier for B1 signals; a diplexer that demultiplexes and/or multiplexes the MHB radio-frequency signal and the LB radio-frequency signal; a transmission filter that is connected to the power amplifier and has, as a passband, a transmission band of B1; and a band-elimination filter that is disposed between the diplexer and the transmission filter, and has, as an attenuation band, a transmission band of n77. The second transfer circuit includes a power amplifier for n77 signals.
POWER AMPLIFIER MODULE
A power amplifier module includes an output-stage amplifier, a driver-stage amplifier, an input switch, an output switch, an input matching circuit, an inter-stage matching circuit, an output matching circuit, and a control circuit. The input switch selectively connects one of a plurality of input signal paths to an input terminal of the driver-stage amplifier. The output switch selectively connects one of a plurality of output signal paths to an output terminal of the output-stage amplifier. The control circuit controls operations of the driver-stage amplifier and the output-stage amplifier. The input switch, the output switch, and the control circuit are integrated into an IC chip. The control circuit is disposed between the input switch and the output switch.