An RF receiver circuit configuration and design is limited by conditions and frequencies to simultaneously provide steady state low-noise signal amplification, frequency down-conversion, and image signal rejection. The RF receiver circuit may be implemented as one of a CMOS single chip device or as part of an integrated system of CMOS components.

A traveling wave parametric amplifier involving a series of Josephson junctions is disclosed. Devices and systems incorporating traveling wave parametric amplifiers, and methods of using and fabricating traveling wave parametric amplifiers are also disclosed.

A traveling wave parametric amplifier involving a series of Josephson junctions is disclosed. Devices and systems incorporating traveling wave parametric amplifiers, and methods of using and fabricating traveling wave parametric amplifiers are also disclosed.

According to an example aspect of the present invention, there is provided a travelling wave parametric amplifier comprising a waveguide transmission line comprising therein at least ten Josephson elements, wherein each of the at least ten Josephson element comprises a loop, with exactly one Josephson junction of first size on one half of the loop and at least two Josephson junctions of a second size on a second half of the loop, the second size being larger than the first size, a flux bias line configured to generate a magnetic flux threading each of the at least one loop, and a set of resistors coupled with the flux bias line.

The present disclosure relates to parametric amplifiers that can be used in the presence of a magnetic field. In particular the present disclosure relates to an integrated signal amplifier that comprises: a quantum dot; a first conductive electrode arranged in a manner such that tunnelling of electrons to the quantum dot is prevented; and a second conductive electrode arranged in a manner such tunnelling of electrons to the quantum dot is permitted. When an oscillating signal is applied across the first and second electrodes, the equivalent capacitance across the first and the second electrodes oscillates at the frequency of the oscillating signal.

The present disclosure relates to parametric amplifiers that can be used in the presence of a magnetic field. In particular the present disclosure relates to an integrated signal amplifier that comprises: a quantum dot; a first conductive electrode arranged in a manner such that tunnelling of electrons to the quantum dot is prevented; and a second conductive electrode arranged in a manner such tunnelling of electrons to the quantum dot is permitted. When an oscillating signal is applied across the first and second electrodes, the equivalent capacitance across the first and the second electrodes oscillates at the frequency of the oscillating signal.

An RF receiver circuit configuration and design is limited by conditions and frequencies to simultaneously provide steady state low-noise signal amplification, frequency down-conversion, and image signal rejection. The RF receiver circuit may be implemented as one of a CMOS single chip device or as part of an integrated system of CMOS components.

An RF receiver circuit configuration and design is limited by conditions and frequencies to simultaneously provide steady state low-noise signal amplification, frequency down-conversion, and image signal rejection. The RF receiver circuit may be implemented as one of a CMOS single chip device or as part of an integrated system of CMOS components.

A traveling wave parametric amplifier involving a series of Josephson junctions is disclosed. Devices and systems incorporating traveling wave parametric amplifiers, and methods of using and fabricating traveling wave parametric amplifiers are also disclosed.

A traveling wave parametric amplifier involving a series of Josephson junctions is disclosed. Devices and systems incorporating traveling wave parametric amplifiers, and methods of using and fabricating traveling wave parametric amplifiers are also disclosed.