Patent classifications
H03F2200/108
BROADBAND POWER AMPLIFIER SYSTEMS AND METHODS
Disclosed are systems, devices, and methodologies to reduce harmonics in a radio frequency output signal. A power amplifier system comprises a power amplifier and a tunable output matching network electrically connected between the output of the power amplifier and an output of the tunable output matching network. The tunable output matching network reduces second-order harmonics in an amplified radio frequency signal when the power amplifier operates in a low frequency mode. The tunable output matching network includes traps such as a series inductor and a first capacitor in series with a first switch, a second capacitor in series with a second switch, and a third capacitor in series with a third switch, where the traps are tuned to selected harmonic frequencies when the power amplifier operates in the low frequency band of the operating band of frequencies.
Off-chip distributed drain biasing of high power distributed amplifier monolithic microwave integrated circuit (MMIC) chips
Off-chip distributed drain biasing increases output power and efficiency for high power distributed amplifier MMICs. An off-chip bias circuit has a common input for receiving DC bias current and a plurality of parallel-connected bias chokes among which the DC bias current is divided. The chokes are connected to a like plurality of drain terminals at different FET amplifier stages to supply DC bias current at different locations along the output transmission line. Off-chip distributed drain biasing increases the level of DC bias current that can be made available to the amplifier and add inductances to selected FET amplifier stages, typically the earlier stages, to modify the load impedance seen at the drain terminal to better match the amplifier stages to improve power and efficiency.
Body tie optimization for stacked transistor amplifier
A transistor stack can include a combination of floating and body tied devices. Improved performance of the RF amplifier can be obtained by using a single body tied device as the input transistor of the stack, or as the output transistor of the stack, while other transistors of the stack are floating transistors. Transient response of the RF amplifier can be improved by using all body tied devices in the stack.
Amplifiers operating in envelope tracking mode or non-envelope tracking mode
Various envelope tracking amplifiers are presented that can be switched between an ET (envelope tracking) mode and a non-ET mode. Switches and/or tunable components are utilized in constructing the envelope tracking amplifiers that can be switched between the ET mode and the non-ET mode.
AMPLIFIER SYSTEM, CONTROLLER OF MAIN AMPLIFIER AND ASSOCIATED CONTROL METHOD
The present invention provides a control circuit to stabilize an output power of a power amplifier. The control circuit comprises a voltage clamping loop, a current clamping loop and a loop for reducing power variation under VSWR, where the voltage clamping loop is used to clamp an output voltage of the power amplifier within a defined voltage range, the current clamping loop is used to clamp a current of the power amplifier within a defined current range, and the loop for reducing power variation under VSWR is implemented by an impedance detector to compensate the output power under VSWR variation.
Bias Control for Stacked Transistor Configuration
Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage that varies according to a control voltage. The control voltage can be related to a desired output power of the amplifier and/or to an envelope signal of an input signal to the amplifier. Particular biasing for selectively controlling the stacked transistors to operate in either a saturation region or a triode region is also presented. Benefits of such controlling, including increased linear response of an output power of the amplifier, are also discussed.
Method and Apparatus of an Input Resistance of a Passive Mixer to Broaden the Input Matching Bandwidth of a Common Source/Gate LNA
A receiver comprises a Low Noise Amplifier (LNA) configured to amplify an input signal and a resonant circuit coupled to the LNA. A first switch couples current from the resonant circuit to a first capacitor integrating a first voltage, wherein the first switch is enabled with a clock signal. A second switch couples current from the resonant circuit to a second capacitor integrating a second voltage, wherein the second switch is enabled with an inverse clock signal. A differential amplifier comprises a positive input for receiving the first voltage and a negative input for receiving the second voltage in order to produce a sum and a difference frequency spectrum between a signal spectrum carried within the current and a frequency of the clock signal.
Transimpedance amplifier, and related integrated circuit and optical receiver
A transimpedance amplifier includes a first and a second power supply terminal for receiving a positive constant supply voltage, wherein the second power supply terminal represents a ground, and an input terminal adapted to be connected to a current source. The transimpedance amplifier further comprises a transistor comprising a control terminal and two further terminals, wherein the input terminal is connected to the control terminal of the first transistor. An inductor is connected between the first of the two further terminals of the transistor and the first power supply terminal, and a bias network is connected between the second of the two further terminals of the transistor and ground. Specifically, the transimpedance amplifier is configured such that the resistance between said first of said two further terminals of said first transistor and said first power supply terminal is small enough, such that said transimpedance amplifier operates as a differentiator.
RF POWER TRANSISTORS WITH VIDEO BANDWIDTH CIRCUITS, AND METHODS OF MANUFACTURE THEREOF
Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor, an impedance matching circuit, and a video bandwidth circuit. The impedance matching circuit is coupled between the transistor and an RF I/O (e.g., an input or output lead). The video bandwidth circuit is coupled between a connection node of the impedance matching circuit and a ground reference node. The video bandwidth circuit includes a plurality of components, which includes an envelope inductor and an envelope capacitor coupled in series between the connection node and the ground reference node. The video bandwidth circuit further includes a first bypass capacitor coupled in parallel across one or more of the plurality of components of the video bandwidth circuit.
Single-end amplifier and noise cancelling method thereof
A single-end amplifier includes: a noise cancelling circuit, coupled to a power supply, configured to receive a power signal and to cancel a part of ripples and noises in the power signal to generate an initial signal; an amplifying circuit, configure to receive the initial signal at a first end of the amplifying signal, and to amplify the initial signal to generate a first signal at a second end; and a first transmitting circuit, configured to receive the power signal and to generate a second signal at the second end of the amplifying circuit. The first signal and the second signal are superimposed and outputted to cancel most part of the ripples and noises in the power signal. The noise cancelling circuit includes a first capacitor and a first choke coil.