A tunable vector recombination amplifier comprises an input, an output, first and second amplifier circuit paths each including a respective phase shifter to receive a respective input signal from the input and to apply a respective phase shift to produce a respective phase-shifted signal, a respective interstage impedance matching network, and a respective amplifier connected between the respective phase shifter and interstage impedance matching network to receive and amplify the respective phase-shifted signal to produce a respective amplified signal, first and second controllable DC voltage sources each coupled to a respective amplifier and configured to provide a respective supply voltage to the respective amplifier, values of the supply voltages being independently controllable, and an output amplifier stage to receive, amplify, and vectorially combine the amplified signals to produce a combined signal having a specified phase determined by the phase shifts and supply-voltage values and a specified amplitude at the output.

A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.

A system including a source follower circuit is disclosed. The source follower circuit configured as a voltage buffer that includes a first common-drain transistor that passes an input signal at the gate to an output loading capacitor at the source, and a second common-drain transistor that is used as a bias current source. The source follower circuit includes a first resistor at the drain of the first transistor generating a first voltage that is fed back through a first path through the gate of the second transistor so as to produce additional current to help the output signal catch up with the input voltage. The source follower circuit further includes an inductive element and bias circuit, which along with the first resistor, increases bandwidth and reduced settling time.

A transistor stack can include a combination of floating and body tied devices. Improved performance of the RF amplifier can be obtained by using a single body tied device as the input transistor of the stack, or as the output transistor of the stack, while other transistors of the stack are floating transistors. Transient response of the RF amplifier can be improved by using all body tied devices in the stack.

Methods and devices to minimize or reduce phase discontinuity between different gain modes (including bypass, active and passive modes) with reduced increase in circuit size (footprint or number of components) and complexity, without impacting other performance parameters, are disclosed. Phase shifter elements that can be disposed in both the active and passive bypass paths are also described. Moreover, devices using the same reconfigurable phase shifter elements in both active and bypass modes are described. Components of the phase shifters can also perform output matching when the phase shifters are implemented as part of an RF receiver front-end.

A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.

A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.

A power amplification module includes a first transistor which amplifies and outputs a radio frequency signal input to its base; a current source which outputs a control current; a second transistor connected to an output of the current source, a first current from the control current input to its collector, a control voltage generation circuit connected to the output and which generates a control voltage according to a second current from the control current; a first FET, the drain being supplied with a supply voltage, the source being connected to the base of the first transistor, and the gate being supplied with the control voltage; and a second FET, the drain being supplied with the supply voltage, the source being connected to the base of the second transistor, and the gate being supplied with the control voltage.

A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.

A transistor stack can include a combination of floating and body tied devices. Improved performance of the RF amplifier can be obtained by using a single body tied device as the input transistor of the stack, or as the output transistor of the stack, while other transistors of the stack are floating transistors. Transient response of the RF amplifier can be improved by using all body tied devices in the stack.