A transistor stack can include a combination of floating and body tied devices. Improved performance of the RF amplifier can be obtained by using a single body tied device as the input transistor of the stack, or as the output transistor of the stack, while other transistors of the stack are floating transistors. Transient response of the RF amplifier can be improved by using all body tied devices in the stack.

A power amplifier includes a two-dimensional matrix of NM active cells formed by stacking main terminals of multiple active cells in series. The stacks are coupled in parallel to form the two-dimensional matrix. The power amplifier includes a driver structure to coordinate the driving of the active cells so that the effective output power of the two-dimensional matrix is approximately NM the output power of each of the active cells.

Apparatus and methods for envelope tracking systems are provided. In certain configurations, an envelope tracking system includes a digital filter that generates a filtered envelope signal based on a digital envelope signal representing an envelope of a radio frequency signal, a buck converter controllable by the filtered envelope signal and including an output electrically connected to a power amplifier supply voltage, a digital-to-analog converter module including an output electrically connected to the output of the buck converter and that provides an output current, and a digital shaping and delay circuit configured to generate a shaped envelope signal based on shaping the filtered envelope signal. The shaped envelope signal controls a magnitude of the output current, and the digital shaping and delay circuit controls a delay of the shaped envelope signal to align the output of the digital-to-analog converter module and the output of the buck converter.

A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.

An electric power converter includes a first capacitor being located between an input terminal and an output terminal, and that connects a first terminal being located between the input terminal and a ground, a reactor that connects through electric contact between the first terminal and the output terminal, a switching element that connects through electric contact between the input terminal and the output terminal, and a control unit that executes a first PWM control process controlling a pulse width of the PWM waveform by on and off of the switching device according to the fluctuation of the output voltage, and that executes a second PWM control process widening a pulse width of the PWM and a duty cycle of a PWM than those of the previous cycle when a pulse width becomes a lower limit.

Embodiments of an RF amplifier include a transistor with a control terminal and first and second current carrying terminals, and a shunt circuit coupled between the first current carrying terminal and a ground reference node. The shunt circuit is an output pre-match impedance conditioning shunt circuit, which includes a first shunt inductance, a second shunt inductance, and a shunt capacitor coupled in series. The first shunt inductance comprises a plurality of bondwires coupled between the first current carrying terminal and the second shunt inductance, and the second shunt inductance comprises an integrated inductor coupled between the first shunt inductance and a first terminal of the shunt capacitor. The shunt capacitor is configured to provide capacitive harmonic control of an output of the transistor.

A device includes a substrate and a package input terminal. The device includes a driver amplifier mounted to the substrate and configured to receive a radio frequency input signal. A first amplifier is mounted to the substrate. The first amplifier includes a first amplifier input terminal. A second amplifier is mounted to the substrate. The second amplifier includes a second amplifier input terminal. An inter-stage network is connected between the driver amplifier and the first amplifier and between the driver amplifier and the second amplifier. The inter-stage network includes a first capacitor connected between the driver amplifier and the first amplifier input terminal, and an inductor having a first terminal and a second terminal. The first terminal of the inductor is connected to the first capacitor. The inter-stage network includes a second capacitor connected between the second terminal of the inductor and the second amplifier input terminal.

A power amplification circuit that includes: a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked, the capacitor element including a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof; and a transistor that amplifies a radio-frequency signal. The radio-frequency signal is supplied to the one electrode of the first capacitor. The other electrode of the first capacitor and the one electrode of the second capacitor are connected to a base of the transistor, and the other electrode of the second capacitor is connected to the emitter of the transistor.

Embodiments disclosed herein relate to a bias circuit that uses Schottky diodes. Typically, a bias circuit will include a number of transistors used to generate a bias voltage or a bias current for a power amplifier. Many wireless devices include power amplifiers to facilitate processing signals for transmission and/or received signals. By substituting the bias circuit design with a design that utilizes Schottky diodes, the required battery voltage of the bias circuit may be reduced enabling the use of lower voltage power supplies.

Certain aspects of the present disclosure provide methods and apparatus for amplifying signals with an amplification circuit. The amplification circuit generally includes a first transistor, an input path coupled between an input node of the amplification circuit and a control input of the first transistor, and a feedforward path coupled between the input node and a feedforward node. In certain aspects, the amplification circuit may also include a first resistive device coupled between the feedforward node and the control input of the first transistor, a biasing circuit coupled to the feedforward node, and a low-impedance path coupled to the feedforward node.