A power amplification module includes a first transistor which amplifies and outputs a radio frequency signal input to its base; a current source which outputs a control current; a second transistor connected to an output of the current source, a first current from the control current input to its collector, a control voltage generation circuit connected to the output and which generates a control voltage according to a second current from the control current; a first FET, the drain being supplied with a supply voltage, the source being connected to the base of the first transistor, and the gate being supplied with the control voltage; and a second FET, the drain being supplied with the supply voltage, the source being connected to the base of the second transistor, and the gate being supplied with the control voltage.

Certain aspects of the present disclosure provide methods and apparatus for amplifying signals with an amplification circuit. The amplification circuit generally includes a first transistor, an input path coupled between an input node of the amplification circuit and a control input of the first transistor, and a feedforward path coupled between the input node and a feedforward node. In certain aspects, the amplification circuit may also include a first resistive device coupled between the feedforward node and the control input of the first transistor, a biasing circuit coupled to the feedforward node, and a low-impedance path coupled to the feedforward node.

A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. The semiconductor substrate supports metallization levels of a back end of line structure. The metal lines of the inductive input element, inductive output element and inductive degeneration element are formed within one or more of the metallization levels. The inductive input element has a spiral shape and the an amplifier circuit, an inductive output element and an inductive degeneration element are located within the spiral shape.

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage that varies according to a control voltage. The control voltage can be related to a desired output power of the amplifier and/or to an envelope signal of an input signal to the amplifier. Particular biasing for selectively controlling the stacked transistors to operate in either a saturation region or a triode region is also presented. Benefits of such controlling, including increased linear response of an output power of the amplifier, are also discussed.

Circuits, devices and methods are disclosed, including radio-frequency circuitry comprising a polar modulator configured to invert a sampled transmitted signal into an inverted sampled transmitted signal, a signal combiner configured to combine the inverted sampled transmitted signal with a received signal and a control logic circuit coupled to the polar modulator, the control logic circuit configured to adjust one or more tuning parameters of the polar modulator for inverting the sampled transmitted signal.

A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.

A radio frequency circuit includes a switching circuit, an amplifying circuit, and a potential stabilizing circuit. The switching circuit includes a switch disposed on a path connecting a first terminal, to which a radio-frequency signal is input, to a second terminal, from which the radio-frequency signal is output, a first capacitor disposed between the first terminal and the switch, and a second capacitor disposed between the switch and the second terminal. The amplifying circuit includes an amplifier disposed between the switching circuit and the second terminal, a third capacitor disposed between the switching circuit and the amplifier, and a fourth capacitor disposed between the amplifier and the second terminal. The potential stabilizing circuit is connected to a first node which is located between the switching circuit and the amplifying circuit and which is located on a path connecting the second capacitor to the third capacitor.

A semiconductor substrate includes emitter electrodes for multiple high-frequency amplifying transistors. An insulating substrate includes multiple land electrodes, ground electrodes, and multiple inductor electrodes. The land electrodes are formed on the front surface or near the front surface of the insulating substrate, and are joined to the respective emitter electrodes. The ground electrodes are formed inside the insulating substrate. Each of the inductor electrodes couples a corresponding one of the land electrodes to any of the ground electrodes in such a manner that the lengths of the coupling to the ground electrodes are individually determined.

Devices and methods for generating a bias voltage for a transceiver operating in time division multiplexing operation, and corresponding transceivers are provided. In this case, the bias voltage is controlled in guard intervals between transmission and reception of signals by the transceiver.

A power amplification module includes a first transistor which amplifies and outputs a radio frequency signal input to its base; a current source which outputs a control current; a second transistor connected to an output of the current source, a first current from the control current input to its collector, a control voltage generation circuit connected to the output and which generates a control voltage according to a second current from the control current; a first FET, the drain being supplied with a supply voltage, the source being connected to the base of the first transistor, and the gate being supplied with the control voltage; and a second FET, the drain being supplied with the supply voltage, the source being connected to the base of the second transistor, and the gate being supplied with the control voltage.