A bias compensation circuit, coupled to an amplifying transistor, is disclosed. The bias compensation circuit comprises a voltage locking circuit, comprising a first terminal and a second terminal, wherein the first terminal is coupled to a third terminal the amplifying transistor, and the second terminal is coupled to a control terminal of the amplifying transistor; and a first resistor, coupled to the first terminal of the voltage locking circuit; wherein when the voltage locking circuit is conducted, a voltage difference between the first terminal and the second terminal is substantially constant.

Disclosed examples include differential amplifier circuits and variable neutralization circuits for providing an adjustable neutralization impedance between an amplifier input node and an amplifier output node, including neutralization impedance T circuits with first and second impedance elements in series between the amplifier input and output, and a third impedance element, including a first terminal connected to a node between the first and second impedance elements, and a second terminal connected to a transistor. The transistor operates according to a control signal to control the neutralization impedance between the amplifier input node and the amplifier output node.

A power supply circuitry includes a first circuitry, a second circuitry, a fourth circuitry, and a fifth circuitry. The first circuitry outputs a first current based on a drive signal. The second circuitry generates a second current according to the first current. The fourth circuitry generates the drive signal based on a first voltage according to the first current. The fifth circuitry outputs a second voltage based on the first current and on the second current.

Bias networks for amplifiers are disclosed. An example bias network includes an adaptive bias circuit, configured to generate a bias signal for an amplifier, and further includes a coupling circuit, configured to couple the adaptive bias circuit to the amplifier. The coupling circuit is made adaptive in that its' impedance depends on a power level of an input signal to be amplified by the amplifier. By configuring the coupling circuit to have a variable impedance that depends on the power level of the input signal, the coupling circuit may adapt to the input power level and, thereby, may modify the bias signal to reduce/optimize at least some of the nonlinearity that may be introduced to the bias signal by the adaptive bias circuit.

Disclosed examples include differential amplifier circuits and variable neutralization circuits for providing an adjustable neutralization impedance between an amplifier input node and an amplifier output node, including neutralization impedance T circuits with first and second impedance elements in series between the amplifier input and output, and a third impedance element, including a first terminal connected to a node between the first and second impedance elements, and a second terminal connected to a transistor. The transistor operates according to a control signal to control the neutralization impedance between the amplifier input node and the amplifier output node.

Disclosed are a radio frequency power amplifier for inhibiting a harmonic wave and stray, a chip and a communication terminal. The radio frequency power amplifier comprises a power source, an LDO circuit, a harmonic inhibition unit, a stray inhibition unit, an amplifying unit, and a low-pass matching network. On the one hand, by means of the power source being connected to the harmonic inhibition unit, harmonic waves and stray of the power source at a resonant frequency are inhibited. Additionally, by means of the stray inhibition unit reducing the gain of the amplifying unit at a resonant frequency, output of stray is reduced. On the other hand, by means of the low-pass matching network being embedded at an output end of the radio frequency power amplifier, harmonic waves and the stray of a radio frequency signal amplified by the amplifying unit at different frequencies is effectively inhibited.

Bias networks for amplifiers are disclosed. An example bias network includes an adaptive bias circuit, configured to generate a bias signal for an amplifier, and further includes a coupling circuit, configured to couple the adaptive bias circuit to the amplifier. The coupling circuit is made adaptive in that its' impedance depends on a power level of an input signal to be amplified by the amplifier. By configuring the coupling circuit to have a variable impedance that depends on the power level of the input signal, the coupling circuit may adapt to the input power level and, thereby, may modify the bias signal to reduce/optimize at least some of the nonlinearity that may be introduced to the bias signal by the adaptive bias circuit.

A transistor circuit includes a transistor having a gate terminal and first and second conduction terminals, a first circuit configured to convert an AC input signal of the transistor circuit to a gate bias voltage and to apply the gate bias voltage to the gate terminal of the transistor, a second circuit configured to convert the AC input signal of the transistor circuit to a control voltage, and a switching circuit configured to apply a first voltage to the first conduction terminal of the transistor in response to the control voltage.

A system includes an input port having an input voltage, an output port having an output voltage, and a power converter having a switch network with a plurality of power switches and a first resonant tank having a first resonant capacitor and a first resonant inductor, where at least one resonant component within the first resonant capacitor and the first resonant inductor is a switchable component configured to switch between different values. The system further includes a resonant mode selection block configured to adjust a value of the switchable component to maintain a performance of the system, and a controller configured to adjust a switching frequency or a duty cycle of the power converter.

Embodiments of the present disclosure provide circuitry and a method for a gallium nitride (GaN) device. The circuitry includes a negative bias circuit configured to provide a negative bias voltage for a gate of the GaN device; a drain switch circuit configured to turn on or off a positive voltage for a drain of the GaN device; and a control circuit configured to control the drain switch circuit based on provision of the negative bias voltage, such that the positive voltage for the drain is turned on after a voltage of the gate reaches the negative bias voltage and turned off before the negative bias voltage completely disappears.