Amplifiers can be used for a variety of electronic-based applications. Therefore, amplifier performance is of importance. A low noise amplifier can be interfaced after an antenna or a band-select filter as a first active stage, in a receiver since its bandwidth characteristics can be closely related to a system data rate. A bandwidth enhancement technique can be leverage for low noise amplifiers by embedding a transformer between a gate and a drain terminal of a common gate transistor in a cascode topology. The embedded transformer can introduce an additional high-frequency conjugate zero pair, which can push the gain rolling-off start-up point to a higher frequency, peak the higher frequency gain, and broaden the low noise amplifier gain bandwidth.

A die is described comprising at least one 3-way Doherty amplifier comprising a main stage, a first peak stage and a second peak stage. An input is connected to an input network which is connected to the main stage, first peak stage and second peak stage. The input network includes a first impedance connected to an input of the first peak stage and providing a −90° phase shift and a second impedance connected to an input of the second peak stage and providing a 90° phase shift. An output is connected to an output network which is connected to the main stage, first peak stage and second peak stage. The output network includes a third impedance connected to the output of the first peak stage and providing a 180° phase shift and a fourth impedance connected to the output of the main stage and providing a 90° phase shift.

A power amplifier includes: a transistor having a gate electrode, a source electrode and a drain electrode; a passive component part connected to the gate electrode through a gate wiring; and a harmonic circuit connected between the source electrode and the gate wiring and disposed in a region between the gate electrode and the passive component part and between the source electrode and the gate wiring.

Apparatus (1) comprises envelope signal amplification circuitry (11) configured to receive an input envelope signal (ENV_in) indicative of an envelope of an input radio frequency signal (RF_in) and to output an amplified envelope signal (ENV_amp); and a radio frequency power amplifier (12) configured to receive a radio frequency control signal which is dependent on the input radio frequency signal(RF_in) and the input envelope signal (ENV_in), using the amplified envelope signal (ENV_amp) as its supply voltage, to output an amplified radio frequency signal (RF_amp). A method for amplification the radio frequency signal is also provided.

A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.

A radio frequency circuit includes a first acoustic wave filter that is connected to a common terminal and includes a first acoustic wave resonator, a first LC filter that is connected to the common terminal via the first acoustic wave filter and includes at least one of an inductor or a capacitor, a second acoustic wave filter that is connected to the common terminal and includes a second acoustic wave resonator, and a second LC filter that is connected to the common terminal via the second acoustic wave filter and includes at least one of an inductor or a capacitor.

Front-end for processing 2G signal using 3G/4G paths. In some embodiments, a front-end architecture can include a first amplification path and a second amplification path, with each being configured to amplify a 3G/4G signal, and the first amplification path including a phase shifting circuit. The front-end architecture can further include a splitter configured to receive a 2G signal and split the 2G signal into the first and second amplification paths, and a combiner configured to combine amplified 2G signals from the first and second amplification paths into a common output path. The front-end architecture can further include an impedance transformer implemented along the common output path to provide a desired impedance for the combined 2G signal.

A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

Processes and systems for producing glass fibers having regions devoid of glass using submerged combustion melters, including feeding a vitrifiable feed material into a feed inlet of a melting zone of a melter vessel, and heating the vitrifiable material with at least one burner directing combustion products of an oxidant and a first fuel into the melting zone under a level of the molten material in the zone. One or more of the burners is configured to impart heat and turbulence to the molten material, producing a turbulent molten material comprising a plurality of bubbles suspended in the molten material, the bubbles comprising at least some of the combustion products, and optionally other gas species introduced by the burners. The molten material and bubbles are drawn through a bushing fluidly connected to a forehearth to produce a glass fiber comprising a plurality of interior regions substantially devoid of glass.