A radio frequency module includes a module board including a first principal surface and a second principal surface on opposite sides of the module board, a transmission power amplifier connected to a transmission path, a first circuit component connected to a reception path, and a control circuit that controls the transmission power amplifier. The control circuit is disposed on the first principal surface, and the first circuit component is disposed on the second principal surface.

Describe is a buffer which comprises: a differential source follower coupled to a first input and a second input; first and second current steering devices coupled to the differential source follower; and a current source coupled to the first and second current steering devices. The buffer provides high supply noise rejection ratio (PSRR) together with high bandwidth.

A power amplifier circuit includes lower-stage and upper-stage differential amplifying pairs, a combiner, first and second inductors, and first and second capacitors. First and second signals are input into the lower-stage differential amplifying pair. The upper-stage differential amplifying pair outputs first and second amplified signals. The combiner combines the first and second amplified signals. The lower-stage differential amplifying pair includes first and second transistors. A supply voltage is supplied to the collectors of the first and second transistors. The first and second signals are supplied to the bases of the first and second transistors. The upper-stage differential amplifying pair includes third and fourth transistors. A supply voltage is supplied to the collectors of the third and fourth transistors. The emitters of the third and fourth transistors are grounded via the first and second inductors and are connected to the first and second transistors via the first and second capacitors.

A protection circuit comprises a first transistor, a comparator, a second transistor, and a third transistor. The first transistor has a gate connected to an input terminal and configured to pass a drain current based on a potential at the input terminal. The comparator has a non-inverting terminal to which a source of the first transistor is connected and an inverting terminal to which a reference voltage is applied. The second transistor has a gate to which an output of the comparator is applied, a source connected to a power supply voltage, and a drain connected to the input terminal. The third transistor has a gate to which a predetermined voltage is applied, a drain connected to the gate of the second transistor, and a source connected to the drain of the input transistor.

A vector distribution method for operation of a power amplifier of a wireless transmitter including receiving, by a first amplifier circuit, a first input vector and a second input vector. The first input vector includes data derived from an input signal of the wireless transmitter and the second input vector includes other data derived from the input signal of the wireless transmitter. The method includes, in response to receiving the input signal, instructing the first amplifier circuit to output an output signal at a high voltage.

A high frequency circuit includes a transmit terminal and a transmit and receive terminal, a power amplifier that amplifies a high frequency signal inputted from the transmit terminal and outputs the high frequency signal toward the transmit and receive terminal, and an output matching circuit that is positioned on a signal path connecting the power amplifier and the transmit and receive terminal and that optimizes the output load impedance of the power amplifier. The output matching circuit includes a matching circuit coupled to an output terminal of the power amplifier, another matching circuit, and a switch that changes a connection between the matching circuits. The power amplifier and the switch are formed at a single semiconductor IC. The matching circuits are formed outside the semiconductor IC.

A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

A trans-impedance amplifier (TIA) includes a first circuit, a second circuit, and a third circuit. Both the first circuit and the second circuit are coupled to a current source, an operational amplifier, and the third circuit. The first circuit is configured to receive a first current, provide a third voltage to the third circuit, perform shape filtering on the first current, and convert the shape filtered first current to a first voltage for output. The second circuit is configured to receive a second current, provide a fourth voltage to the third circuit, perform shape filtering on the second current, and convert the shape filtered second current to a second voltage for output. The third circuit is configured to cooperate with the first circuit and the second circuit in performing shape filtering. The operational amplifier is configured to provide a small-signal virtual ground point to the first circuit.

The present disclosure relates to a full-bridge class D amplifier comprising a first and second half-bridge circuit, wherein each half-bridge comprises a half-bridge output terminal between a high-side switch and a low-side switch. Wherein the first and second half-bridge circuits are controlled by a respective control signal to operate in differential mode with a predetermined switching frequency and wherein each half-bridge circuit further comprises an output terminal inductor connected between the half-bridge output terminal and ground. The amplifier further comprises a first and second coil coupled to form a common mode choke, wherein the first half-bridge output terminal is connected to an input terminal of the first coil, and wherein the second half-bridge output terminal is connected to an input terminal of the second coil .

An amplifier circuit includes a high-voltage output stage. The high-voltage output stage includes an output terminal, a high-side output circuit, a low-side output circuit, and a feedback circuit. The high-side output circuit sources current to the output terminal, and includes a high-side input transistor, a first high-side cascode transistor coupled to the high-side input transistor, and a second high-side cascode transistor coupled to the first high-side cascode transistor and the output terminal. The low-side output circuit sinks current from the output terminal, and includes a low-side input transistor, a first low-side cascode transistor coupled to the low-side input transistor, and a second low-side cascode transistor coupled to the first low-side cascode transistor and the output terminal. The feedback circuit is configured to bias the second high-side cascode transistor and the second low-side cascode transistor based on a sense voltage generated by the high-side output circuit or the low-side output circuit.