We disclose multiband receivers for millimeter-wave devices, which may have reduced size and/or reduced power consumption. One multiband receiver comprises a first band path comprising a first passive mixer configured to receive a first input RF signal having a first frequency and to be driven by a first local oscillator signal having a frequency about ⅔ the first frequency; a second band path comprising a second passive mixer configured to receive a second input RF signal having a second frequency and to be driven by a second local oscillator signal having a frequency about ⅔ the second frequency; and a base band path comprising a third passive mixer configured to receive intermediate RF signals during a duty cycle and to be driven by a third local oscillator signal having a frequency about ⅓ the first frequency or about ⅓ the second frequency during the duty cycle.

A device is provided including a power transistor at an output node, which is coupled to a load terminal of the power transistor. A DC feed path is also provided. One or more discrete capacitors are coupled between the DC feed path and a reference potential. A first capacitor of the one or more discrete capacitors which is closest to the output node is a trench capacitor device.

Embodiments of an apparatus that includes a substrate and an inductor residing in the substrate are disclosed. In one embodiment, the inductor is formed as a conductive path that extends from a first terminal to a second terminal. The conductive path has a shape corresponding to a two-dimensional (2D) lobe laid over a three-dimensional (3D) volume. Since the shape of the conductive path corresponds to the 2D lobe laid over a 3D volume, the magnetic field generated by the inductor has magnetic field lines that are predominately destructive outside the inductor and magnetic field lines that are predominately constructive inside the inductor. In this manner, the inductor can maintain a high quality (Q) factor while being placed close to other components.

An amplifier device includes an alternate current (AC) coupling circuit, an amplifier circuit, and a first bias circuit. The amplifier circuit is configured to amplify an input signal to generate an output signal, in which the amplifier circuit includes a first input terminal, and the first input terminal receives the input signal via the AC coupling circuit. The first bias circuit is configured to apply a first bias voltage to the first input terminal according to one of the output signal and a first voltage, such that the amplifier circuit amplifies the input signal to output the output signal.

The present disclosure relates to Class D amplifier circuitry comprising a mode controller configured to dynamically adjust an operational switching mode of the Class D amplifier over a range between a Class AD mode and a Class BD mode.

We disclose multiband receivers for millimeter-wave devices, which may have reduced size and/or reduced power consumption. One multiband receiver comprises a first band path comprising a first passive mixer configured to receive a first input RF signal having a first frequency and to be driven by a first local oscillator signal having a frequency about ⅔ the first frequency; a second band path comprising a second passive mixer configured to receive a second input RF signal having a second frequency and to be driven by a second local oscillator signal having a frequency about ⅔ the second frequency; and a base band path comprising a third passive mixer configured to receive intermediate RF signals during a duty cycle and to be driven by a third local oscillator signal having a frequency about ⅓ the first frequency or about ⅓ the second frequency during the duty cycle.

A class-D amplifier with multiple “nested” levels of feedback. The class-D amplifier surrounds an inner feedback loop, which takes the output of a switching amplifier and corrects for errors generated across the switching amplifier, with additional feedback loops that also take the output of the switching amplifier.

A receiver includes an amplifier that receives a transmission signal and amplifies a first voltage difference between the transmission signal and a reference signal to generate a first output signal and a second output signal at a first node and a second node. An equalizer is provided, which is connected to the first node and the second node and receives the transmission signal. The equalizer compensates a common-mode offset between the first output signal and the second output signal based on a second voltage difference between an average voltage level of the transmission signal and the reference signal.

A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

Disclosed is an amplifier having a carrier amplifier configured as a common-emitter carrier power stage and a peaking amplifier configured as a common-emitter peaking power stage. Further included is power adaptive biasing circuitry coupled between the carrier amplifier and the peaking amplifier, wherein the power adaptive biasing circuitry is configured to sense direct current base voltages of the common-emitter carrier power stage and to generate control currents that debias the common-emitter carrier power stage in response to the current base voltages of the common-emitter carrier power stage.