H03F2200/27

Sequenced transmit muting for wideband power amplifiers

A sequenced transmit muting wideband power amplifier is provided that includes at least one pre-driver stage having at least a first pre-driver and a second pre-driver. A mute switch selectively establishes a communication path between the first and second pre-drivers or couples the second pre-driver to a termination resistor. A pre-driver switch selectively activates/deactivates the first and second pre-drivers. A driver stage is in communication with the pre-driver stage and includes a first driver. A final amplifier stage is in communication with the driver stage and includes at least one second driver. At least one S-NBS switch is configured to selectively activate/deactivate the first driver and second driver. A controller is configured to activate the at least one pre-driver switch, the mute switch, the at least one S-NBS switch to selectively place the amplifier in one of a transmit mode and a mute mode.

Enhanced Reverse Isolation and Gain Using Feedback

An apparatus is disclosed for enhanced reverse isolation and gain using feedback. The apparatus includes an input node, an amplification node, a feedback node, an output circuit, at least one amplifier circuit, and a feedback circuit. The output circuit is connected between the amplification node and the feedback node. The at least one amplifier circuit is connected between the input node and the amplification node. The at least one amplifier circuit includes an input transistor and a cascode stage. The input transistor has a gate node and a drain node, and the gate node is connected to the input node. The cascode stage is connected between the drain node and the amplification node. The feedback circuit includes at least one feedback capacitor that is connected between the feedback node and the input node.

VOLTAGE DETECTION DEVICE
20190146011 · 2019-05-16 ·

A voltage detection device comprises a voltage detection circuit, which is a fully-differential type and a control circuit for controlling an operation of the voltage detection circuit. The voltage detection circuit includes a switched capacitor circuit, a differential amplifier, a common mode feedback circuit for controlling a common mode level of an output voltage of the differential amplifier and a bias circuit for supplying biases to the differential amplifier and the common mode feedback circuit. The control circuit controls the voltage detection circuit to execute intermittently a detection operation for detecting the voltage. The control circuit controls the voltage detection circuit to execute a pseudo operation of an execution period, which is shorter than that of the detection operation, during a transition period from a stop state, in which no detection operation is executed, to the operation state, in which the detection operation is executed.

System and method for biasing an RF circuit

In accordance with an embodiment, a circuit includes: a replica input transistor, a first replica cascode transistor, an active current source, and an active cascode biasing circuit. The active current source is configured to set a current flowing through the first replica cascode transistor and the replica input transistor to a predetermined value by adjusting a voltage of a control node of the replica input transistor; and an active cascode biasing circuit including a first output coupled to the control node of the first replica cascode transistor, and the active cascode biasing circuit configured to set a drain voltage of the replica input transistor to a predetermined voltage by adjusting a voltage of the control node of the first replica cascode transistor.

LNA with programmable linearity
10284151 · 2019-05-07 · ·

A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a common source input stage and a common gate output stage can be turned on or off using the gate of the output stage. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input stage of each cascode. Further switches used for switching degeneration inductors, gate/sources caps and gate to ground caps for each legs can be used to further improve the matching performance of the invention.

Bias circuitry for depletion mode amplifiers

A circuit having an amplifier, comprising: a depletion mode transistor having a source electrode coupled to a reference potential; a drain electrode coupled to a potential more positive than the reference potential; and a gate electrode for coupling to an input signal. The circuit includes a bias circuit, comprising: a current source; and biasing circuitry coupled to the current source and between the potential more positive than the reference potential and a potential more negative than the reference potential. A control circuit is connected to the current source for controlling the amount of current produced by the current source to the biasing circuitry.

CIRCUITRY AND METHOD FOR GaN DEVICE
20190123695 · 2019-04-25 · ·

Embodiments of the present disclosure provide circuitry and a method for a gallium nitride (GaN) device. The circuitry includes a negative bias circuit configured to provide a negative bias voltage for a gate of the GaN device; a drain switch circuit configured to turn on or off a positive voltage for a drain of the GaN device; and a control circuit configured to control the drain switch circuit based on provision of the negative bias voltage, such that the positive voltage for the drain is turned on after a voltage of the gate reaches the negative bias voltage and turned off before the negative bias voltage completely disappears.

System and Method for Biasing an RF Circuit

In accordance with an embodiment, a circuit includes: a replica input transistor, a first replica cascode transistor, an active current source, and an active cascode biasing circuit. The active current source is configured to set a current flowing through the first replica cascode transistor and the replica input transistor to a predetermined value by adjusting a voltage of a control node of the replica input transistor; and an active cascode biasing circuit including a first output coupled to the control node of the first replica cascode transistor, and the active cascode biasing circuit configured to set a drain voltage of the replica input transistor to a predetermined voltage by adjusting a voltage of the control node of the first replica cascode transistor.

Optical modulator driver circuit and optical transmitter

An optical modulator driver circuit (1) includes an amplifier (50, Q10, Q11, R10-R13), and a current amount adjustment circuit (51) capable of adjusting a current amount of the amplifier (50) in accordance with a desired operation mode. The current amount adjustment circuit (51) includes at least two current sources (IS10) that are individually ON/OFF-controllable in accordance with a binary control signal representing the desired operation mode.

HARD-WIRED ADDRESS FOR PHASED ARRAY ANTENNA PANELS
20190089067 · 2019-03-21 ·

An apparatus includes a phased array antenna panel and a plurality of beam former circuits. The phased array antenna panel generally comprises a plurality of antenna elements. The plurality of beam former circuits are each mounted on the phased array antenna panel adjacent to a number of the antenna elements. Each beam former circuit has one or more ports directly coupled to each of the adjacent antenna elements. Each beam former circuit may be configured to generate a plurality of radio-frequency output signals at the ports while in a transmit mode and receive a plurality of radio-frequency input signals at the ports while in a receive mode. Each beam former circuit generally implements a hard-wired address.