A power amplifier module includes a power amplifier circuit and a control IC. The power amplifier circuit includes a bipolar transistor that amplifies power of an RF signal and outputs an amplified signal. The control IC includes an FET, which serves as a bias circuit that supplies a bias signal to the bipolar transistor. The FET is operable at a threshold voltage lower than that of the bipolar transistor, thereby making it possible to decrease the operating voltage of the power amplifier module.

Provided are an input matching circuit, at least one amplifying transistor that receives a signal from the input matching circuit, a first dummy transistor that receives a signal from the input matching circuit, a second dummy transistor that receives a signal from the input matching circuit, and an output matching circuit that outputs an output of the amplifying transistor, the amplifying transistor being arranged between the first dummy transistor and the second dummy transistor, the amplifying transistor, the first dummy transistor, and the second dummy transistor being provided in a row along the input matching circuit.

A multiple-path amplifier (e.g., a Doherty amplifier) includes a first transistor (e.g., a main amplifier FET), a second transistor (e.g., a peaking amplifier FET), a combining node, and a shunt-inductance circuit. The first and second amplifiers and the combining node structure are integrally-formed with a semiconductor die, and the shunt-inductance circuit is integrated with the die. Outputs of the first and second transistors are electrically coupled to the combining node structure. The shunt-inductance circuit is electrically coupled between the combining node structure and a ground reference node. The shunt-inductance circuit includes a shunt inductance (e.g., including wirebond(s) and/or spiral inductor(s)) that is integrated with the semiconductor die. The multiple-path amplifier also may include an integrated phase shifter/impedance inverter coupled between the outputs of the first and second transistors, and which is configured to impart a 90-degree phase delay between intrinsic drains of the first and second transistors.

A power combiner circuit comprises a network topology for broadband RF and microwave systems that includes coupling elements, internodal matching sections, and an output matching section. The network topology serves as a combining mechanism for power from multiple power amplifiers. The network topology is designed so that characteristic impedances of transmissions lines serving as the coupling elements, internodal matching sections, and an output matching section produce a load impedance at an output port that is matched to the impedances seen by each power amplifier providing power to the power combiner circuit. Such a network topology is scalable to an unlimited number of power amplifiers, and enables a desired broadband frequency response for power amplification, while realizing a very low level of power output loss between input and output ports.

A power amplifier circuit includes an input-stage power amplifier configured to receive a radio-frequency input signal, an output-stage power amplifier configured to output an amplified radio-frequency output signal, and an intermediate-stage power amplifier disposed between the input-stage power amplifier and the output-stage power amplifier. The intermediate-stage power amplifier includes a first transistor, a second transistor, and a capacitor having a first end connected to an emitter of the first transistor and a second end connected to a collector of the second transistor. The intermediate-stage power amplifier receives a signal at a base of the second transistor thereof and outputs an amplified signal from a collector of the first transistor thereof.

A front-end module of a wireless device can replace a passive duplexer with an active duplexer that uses metamaterial matching circuits. The active duplexer can be formed from a power amplifier circuit and a low noise amplifier circuit that each include a metamaterial matching circuit. The combination of a power amplifier circuit and a low noise amplifier circuit that each utilize metamaterials to form the associated matching circuit can provide the functionality of a duplexer without including the additional circuitry of a stand-alone or passive duplexer. Thus, in certain cases, the front-end module can provide duplexer functionality without including a separate duplexer. Advantageously, in certain cases, the size of the front-end module can be reduced by eliminating the passive duplexer. Further, the loss introduced into the signal path by the passive duplexer is eliminated improving the performance of the communication system that includes the active duplexer.

A power amplifier module can be formed that includes metamaterial matching circuits. This power amplifier module can be included as part of a front-end module of a wireless device. The front-end module can replace a passive duplexer with an active duplexer that uses the power amplifier module in combination with a low noise amplifier circuit that can include a metamaterial matching circuit. The combination of PA and LNA circuits that utilize metamaterials can provide the functionality of a duplexer without including a stand-alone or passive duplexer. Thus, in certain cases, the front-end module can provide duplexer functionality without including a separate duplexer. Advantageously, in certain cases, the size of the front-end module can be reduced by eliminating the passive duplexer. Further, the loss introduced into the signal path by the passive duplexer is eliminated improving the performance of the communication system that includes the active duplexer.

The present disclosure describes systems and devices for gain slope equalization in a radio frequency (RF) amplifier (200). The RF amplifier (200) may include an input stage (210) for receiving an RF signal. In conjunction with the input stage (210), the RF amplifier (200) may incorporate an amplification stage (215) to amplify the RF signal. Coupled with the amplification stage (215) may be a transformer (220) including a first winding to receive the amplified RF signal, a second winding providing an RF output signal, and a resonator including a third winding that is coupled to the first and second windings. The resonator may be coupled to a circuit network which may be tuned to affect the resonance frequency and the gain slope of the RF output signal.

The present invention includes a first semiconductor chip, a second semiconductor chip, a first inductor, a second inductor, a second capacitor, protective diodes, and a third inductor. A field effect transistor includes a gate terminal, a drain terminal, and a source terminal connected to a ground terminal. The second semiconductor chip includes an input terminal and an output terminal connected in a direct current manner, and includes a first capacitor connected to the input terminal and to the ground terminal. The first inductor is connected between the output terminal and the gate terminal. The second inductor includes a first terminal connected to the input terminal. The second capacitor is connected between a second terminal of the second inductor and the ground terminal. Protective diodes are connected in series in a forward direction, and each has a cathode, and an anode connected to the ground terminal. The third inductor is connected between the cathode and the second terminal.

A radio frequency power amplifier and a device are disclosed. A first microstrip line and a second microstrip line are coupled, one end of the second microstrip line is an open stub and another end of the second microstrip line is grounded; and the first microstrip line having a first width is connected to a first transmission line having a second width which is wider than the first width. Therefore, some harmonic bands suppression can be implemented independently. Furthermore, the harmonic termination is independent and may not impact one or more fundamental components during matching a network. In addition, it may not take up more space and is sufficiently compact. Furthermore, sufficient wide harmonic response bandwidth can be provided.