The present disclosure provides an amplifier circuit that includes one or more amplifier stages, each of the one or more amplifier stages including a complementary transistor configuration. The complementary transistor configuration includes an NMOS transistor and a PMOS transistor. The NMOS transistor is electrically coupled in parallel to the PMOS transistor. The amplifier circuit further includes an output amplifier stage electrically coupled to an output of the one or more amplifier stages, the output amplifier stage including a non-complementary transistor configuration including one or more NMOS transistors or PMOS transistors.

Radio-frequency amplifier circuit including: a first matching circuit; a driver stage circuit, in which the first matching circuit is coupled to the driver stage circuit, and in which the first matching circuit is configured to transform an input impedance of the driver stage circuit into a first impedance at an input to the first matching circuit; an inter-stage matching circuit coupled to the driver stage circuit; an output stage circuit coupled to the inter-stage matching circuit, in which the inter-stage matching circuit is configured to transform an input impedance of the output stage circuit into a second impedance at an output of the driver stage circuit; and and a second matching circuit coupled to the output stage circuit, in which the second matching circuit is configured to transform an impedance at an output of the second matching circuit into a third impedance at the output of the output stage circuit.

The invention discloses a dual-mode power amplifier with switchable working power and a mode switch method. The power amplifier adopts a multi-tap input transformer, and realizes the switching between preload line and output load line by controlling the on/off of the intermediate switch connected with taps, so as to achieve the best power conversion efficiency under different maximum output powers. By using the change-over switch to control the capacitance value of the matching capacitor, it is easier to adjust the load line, thus further ensuring the performance of the power amplifier provided by the invention. The intermediate switch and change-over switch are integrated on an independent chip by CMOS/phemt/bihemt/SeGe/SOI,etc, or on a power amplifier chip by CMOS/phemt/bihemt/SeGe/SOI, etc, which is easy to realize.

In certain aspects, a chip includes a pad, and a power amplifier having a first output and a second output. The chip also includes a transformer, wherein the transformer includes a first inductor coupled between a first terminal and a second terminal of the transformer, wherein the first terminal is coupled to the first output of the power amplifier, and the second terminal is coupled to the second output of the power amplifier. The transformer also includes a second inductor coupled between a third terminal and a fourth terminal of the transformer, wherein the third terminal is coupled to the pad. The chip also includes a first switch coupled to the fourth terminal, a shunt inductor coupled in parallel with the first switch, and a low-noise amplifier coupled to the third terminal.

The present disclosure relates to an RF amplifier device including an IC chip including at least one transistor formed on a substrate, at least one operational circuit formed on the substrate and electrically coupled to the transistor, and a port configured to electrically couple the at least one operational circuit with operational circuitry outside the IC chip to adjust operation of the operational circuitry.

A power amplifier module includes a first amplifier circuit that amplifies a radio frequency signal with a first gain corresponding to a first control signal to generate a first amplified signal; a second amplifier circuit that amplifies the first amplified signal with a second gain corresponding to a second control signal to generate a second amplified signal; and a control unit that generates the first control signal and the second control signal. The second control signal is a control signal for increasing a power-supply voltage for the second amplifier circuit as a peak-to-average power ratio of the radio frequency signal increases. The first control signal is a control signal for controlling the first gain of the first amplifier circuit so that a variation in the second gain involved in a variation in the power-supply voltage for the second amplifier circuit is compensated for.

A power amplifier includes initial-stage and output-stage amplifier circuits, and initial-stage and output-stage bias circuits. The initial-stage amplifier circuit includes a first high electron mobility transistor having a source electrically connected to a reference potential, and a gate to which a radio-frequency input signal is inputted, and a first heterojunction bipolar transistor having an emitter electrically connected to a drain of the first high electron mobility transistor, a base electrically connected to the reference potential in an alternate-current fashion, and a collector to which direct-current power is supplied and from which a radio-frequency signal is outputted. The output-stage amplifier circuit includes a second heterojunction bipolar transistor having an emitter electrically connected to the reference potential, a base to which the radio-frequency signal outputted from the first heterojunction bipolar transistor is inputted, and a collector to which direct-current power is supplied and from which a radio-frequency output signal is outputted.

In a power amplifier module for performing slope control of a transmitting signal, a gain variation due to a variation in battery voltage is suppressed while suppressing an increase in circuit size. The power amplifier module includes: a first regulator for outputting a first voltage corresponding to a control voltage for controlling a signal level; a second regulator for outputting a second voltage that rises as a battery voltage drops; a first amplifier supplied with the first voltage as a power-supply voltage to amplify an input signal and output an amplified signal; and a second amplifier for amplifying the amplified signal, wherein the second amplifier includes a first amplification unit supplied with the second voltage as the power-supply voltage to amplify the amplified signal, and a second amplification unit supplied with the battery voltage as the power-supply voltage to amplify the amplified signal.

A power amplification module includes a first input terminal arranged to receive a first transmission signal in a first frequency band, a second input terminal arranged to receive a second transmission signal in a second frequency band higher than the first frequency band, a first amplification circuit that amplifies the first transmission signal, a second amplification circuit that amplifies the second transmission signal, a first filter circuit located between the first input terminal and the first amplification circuit, and a second filter circuit located between the second input terminal and the second amplification circuit. The first filter circuit is a low-pass filter that allows the first frequency band to pass therethrough and that attenuates a harmonic of the first transmission signal and the second transmission signal. The second filter circuit is a high-pass filter that allows the second frequency band to pass therethrough and that attenuates the first transmission signal.

A power amplifier module includes a power amplifier circuit and a control IC. The power amplifier circuit includes a bipolar transistor that amplifies power of an RF signal and outputs an amplified signal. The control IC includes an FET, which serves as a bias circuit that supplies a bias signal to the bipolar transistor. The FET is operable at a threshold voltage lower than that of the bipolar transistor, thereby making it possible to decrease the operating voltage of the power amplifier module.