Patent classifications
H03F2200/318
Quasi-switched, multi-band, high-power amplifier and method
A quasi-switched, multi-band, high-power amplifier includes an input matching network, a low band path, a high band path, and an output matching network. The input matching network includes a single input port that is configured to receive an input signal. The input signal includes at least one tone within a specified frequency band. The low band path is configured, when the specified frequency band is a low frequency band, to amplify the input signal to generate a low band amplified signal. The high band path is configured, when the specified frequency band is a high frequency band, to amplify the input signal to generate a high band amplified signal. The output matching network includes a single output port and is configured to filter at least one of the low band amplified signal and the high band amplified signal into a load through the single output port.
AMPLIFIER WITH BASE CURRENT REUSE
An RF amplifier module that has a plurality of amplifiers wherein at least one of the amplifiers is powered via an envelope tracking module. The biasing input of at least one of the amplifiers is provided to the first amplifier to power the first amplifier to reduce power consumption. The first amplifier may also be powered via fixed biasing to provide greater stability of the module.
POWER AMPLIFICATION MODULE
A power amplification module includes a first amplification transistor that receives a first signal outputs an amplified second signal from the collector thereof; and a bias circuit that supplies a bias current to the base of the first amplification transistor. The first bias circuit includes a first transistor that is diode connected and is supplied with a bias control current; a second transistor that is diode connected, the collector thereof being connected to the emitter of the first transistor; a third transistor, the base thereof being connected to the base of the first transistor, and the bias current being output from the emitter thereof; a fourth transistor, the collector thereof being connected to the emitter of the third transistor and the base thereof being connected to the base of the second transistor; and a first capacitor between the base and the emitter of the third transistor.
POWER AMPLIFICATION MODULE
A power amplification module includes a first input terminal arranged to receive a first transmission signal in a first frequency band, a second input terminal arranged to receive a second transmission signal in a second frequency band higher than the first frequency band, a first amplification circuit that amplifies the first transmission signal, a second amplification circuit that amplifies the second transmission signal, a first filter circuit located between the first input terminal and the first amplification circuit, and a second filter circuit located between the second input terminal and the second amplification circuit. The first filter circuit is a low-pass filter that allows the first frequency band to pass therethrough and that attenuates a harmonic of the first transmission signal and the second transmission signal. The second filter circuit is a high-pass filter that allows the second frequency band to pass therethrough and that attenuates the first transmission signal.
Amplifier control systems and methods
A system improve amplifier efficiency of operation relative to that of an amplifier with fixed biasing and fixed matching conditions receives a power level and an indicator of amplifier operation. The indicator is at least one of channel, channel bandwidth, out-of band spectral requirements, spectral mask requirements, error vector magnitude, modulation rate, and modulation type. A controller generates a control signal based at least in part on the power level and the indicator to control at least one of the bias current and the matching conditions of matching circuits. The matching conditions and bias current for channels at an edge of a channel band are different from the bias current and matching conditions for channels nearer a center of the channel band.
POWER AMPLIFICATION MODULE
Provided is a power amplification module that includes: a first amplification circuit that amplifies a first signal and outputs the amplified first signal as a second signal; a second amplification circuit that amplifies the second signal and outputs the amplified second signal as a third signal; and a feedback circuit that re-inputs/feeds back the second signal outputted from the first amplification circuit to the first amplification circuit as the first signal. The operation of the first amplification circuit is halted and the first signal passes through the feedback circuit and is outputted as the second signal at the time of a low power output mode.
Transformer based impedance matching network and related power amplifier, ADPLL and transmitter based thereon
A novel and useful transmitter (TX) architecture for ultra-low power (ULP) radios. An all-digital PLL employs a digitally controlled oscillator (DCO) having switching current sources to reduce supply voltage and power consumption without sacrificing phase noise and startup margins. It also reduces 1/f noise allowing the ADPLL after settling to reduce its sampling rate or shut it off entirely during direct DCO data modulation. A switching power amplifier integrates its matching network while operating in class-E/F.sub.2 to maximally enhance its efficiency. The transmitter has been realized in 28 nm CMOS and satisfies all metal density and other manufacturing rules. It consumes 3.6 mW/5.5 mW while delivering 0 dBm/3 dBm RF power in Bluetooth Low-Energy.
Power amplifier module
In a power amplifier module for performing slope control of a transmitting signal, a gain variation due to a variation in battery voltage is suppressed while suppressing an increase in circuit size. The power amplifier module includes: a first regulator for outputting a first voltage corresponding to a control voltage for controlling a signal level; a second regulator for outputting a second voltage that rises as a battery voltage drops; a first amplifier supplied with the first voltage as a power-supply voltage to amplify an input signal and output an amplified signal; and a second amplifier for amplifying the amplified signal, wherein the second amplifier includes a first amplification unit supplied with the second voltage as the power-supply voltage to amplify the amplified signal, and a second amplification unit supplied with the battery voltage as the power-supply voltage to amplify the amplified signal.
BROADBAND POWER AMPLIFIER SYSTEMS AND METHODS
Disclosed are systems, devices, and methodologies to reduce harmonics in a radio frequency output signal. A power amplifier system comprises a power amplifier and a tunable output matching network electrically connected between the output of the power amplifier and an output of the tunable output matching network. The tunable output matching network reduces second-order harmonics in an amplified radio frequency signal when the power amplifier operates in a low frequency mode. The tunable output matching network includes traps such as a series inductor and a first capacitor in series with a first switch, a second capacitor in series with a second switch, and a third capacitor in series with a third switch, where the traps are tuned to selected harmonic frequencies when the power amplifier operates in the low frequency band of the operating band of frequencies.
POWER AMPLIFIER CIRCUIT
A power amplifier circuit includes a first amplifier transistor and a bias circuit. The first amplifier transistor amplifies a first signal and outputs a second signal. The bias circuit supplies a bias voltage or a bias current to the first amplifier transistor. The first amplifier transistor includes plural unit transistors disposed in a substantially rectangular region. The bias circuit includes first and second bias transistors and first and second voltage supply circuits. The first and second bias transistors respectively supply first and second bias voltages or first and second bias currents to the bases of unit transistors of first and second groups. The first and second voltage supply circuits respectively supply first and second voltages to the bases of the first and second bias transistors. The first and second voltages are decreased in accordance with a temperature increase. The second voltage supply circuit is disposed within the substantially rectangular region.