A compact directed energy system is disclosed that is configured to generate directed energy beams. The compact directed energy system includes a radio frequency system configured to provide a directed energy beam in a frequency range between 500 MHz to 20 Ghz.

Methods and apparatus for limiting the input voltage (swing) of a power amplifier, such as a power amplifier in a radio frequency (RF) front-end of a wireless device. One example radio frequency front-end circuit generally includes a power amplifier, a matching circuit having an output coupled to an input of the power amplifier, and an overvoltage protection circuit coupled to the matching circuit. With an overvoltage protection circuit coupled to the matching circuit in this manner, the power amplifier may have enhanced ruggedness performance.

According to one aspect, an integrated circuit having a radio frequency amplifier includes at least two amplifier stages and an impedance matching device between two amplifier stages of the radio frequency amplifier. The matching device includes two lines which are coupled by electromagnetic induction. The first line is connected to an output of the first amplifier stage and the second line is connected to an input of the second amplifier stage.

Doherty power amplifiers with coupled line combiners are provided herein. In certain embodiments, a power amplifier system includes a carrier amplifier having a carrier output that provides a first radio frequency signal, a peaking amplifier having a peaking output that provides a second radio frequency signal, and a coupled line combiner including a first conductor line connected to the peaking output, a second conductor line electromagnetically coupled to the first conductor line, a third conductor line connected to the carrier output, and a fourth conductor line electromagnetically coupled to the third conductor line and in series with the second conductor line. The power amplifier system further includes an inductor in series with the fourth conductor line and the second conductor line and operable to provide a radio frequency output signal to an output terminal.

An electronic device includes: an antenna, a PAM including a PA configured to amplify a transmitting signal and a protection circuit, a PMIC configured to supply voltage to the PA, and at least one processor is configured to: provide a first signal, to a NAND gate in the protection circuit, provide to a AND gate in the protection circuit, a second signal indicating a result of a logical operation between the first signal and a bias enable signal for the PA, provide to the AND gate, a third signal indicating whether the transmitting signal is input to the PAM, provide to a switching circuit, a fourth signal indicating a result of logical operation between the second signal and the third signal, identify whether to apply a bias voltage to the PA based on the fourth signal, and transmit the transmitting signal, to the external electronic device, via the antenna.

A power amplifier module includes first and second amplifiers, a first bias circuit, and an adjusting circuit. The first amplifier amplifies a first signal. The second amplifier amplifies a second signal based on an output signal from the first amplifier. The first bias circuit supplies a bias current to the first amplifier via a current path on the basis of a bias drive signal. The adjusting circuit includes an adjusting transistor having first, second, and third terminals. A first voltage based on a power supply voltage is supplied to the first terminal. A second voltage based on the bias drive signal is supplied to the second terminal. The third terminal is connected to the current path. The adjusting circuit adjusts the bias current on the basis of the power supply voltage supplied to the first amplifier.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

A low-power standard-compliant NB-IoT wake-up receiver (WRX) is presented. The WRX is designed as a companion radio to a full NB-IoT receiver, only operating during discontinuous RX modes (DRX and eDRX), which allows the full high-power radio to turn off while the wake-up receiver efficiently receives NB-IoTWake-Up Signals (WUS). The fabricated receiver achieves 2.1 mW power at −109 dBm sensitivity with 180 kHz bandwidth over the 750-960 MHz bands. The WRX is fabricated in 28 nm CMOS and consumes 5× less power than the best previously published traditional NB-IoT receivers. This disclosure is the first designed dedicated wake-up receiver for the NB-IoT protocol and demonstrates the benefits of utilizing a WRX to reduce power consumption of NB-IoT radios.

A power amplifier circuit includes a first transistor that amplifies a first signal and outputs a second signal; a second transistor that amplifies the second signal and outputs a third signal; a bias circuit that supplies a bias current to a base of the second transistor; and a bias adjustment circuit that adjusts the bias current by subjecting the first signal to detection. The bias adjustment circuit controls the bias current such that a first current extracted from the bias circuit depends on a magnitude of the first signal.

A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.