A transistor circuit includes a transistor having a gate terminal and first and second conduction terminals, a first circuit configured to convert an AC input signal of the transistor circuit to a gate bias voltage and to apply the gate bias voltage to the gate terminal of the transistor, a second circuit configured to convert the AC input signal of the transistor circuit to a control voltage, and a switching circuit configured to apply a first voltage to the first conduction terminal of the transistor in response to the control voltage.

A sensing system with an AC feedback to the non-signal and non-biased terminal of the transducer. An impedance element, such as two anti-parallel diodes, are provided at the amplifier input, and the amplifier gain is negative and has a size sufficient to ensure that the input on the one terminal does not exceed the forward voltage of the diode.

A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a common source configured input FET and a common gate configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. Further switches used for switching degeneration inductors, gate capacitors and gate to ground caps for each legs can be used to further improve the matching performance of the invention.

An amplifier includes a printed circuit board that includes an output terminal for outputting an electrical signal to an outside and a bias terminal for receiving a bias of the electrical signal from the outside, and an integrated circuit, a capacitor, an inductor, and a ferrite bead element mounted on the printed circuit board. The integrated circuit includes a driving circuit and an output end, and outputs the electrical signal generated by the driving circuit from the output end. The capacitor is connected between the output end and the output terminal. A series circuit includes the inductor and the ferrite bead element connected to each other in series, with the inductor connected to the output end, and the ferrite bead element connected to the bias terminal.

An amplifier includes a semiconductor substrate. A first conductive feature partially covers the bottom substrate surface to define a conductor-less region of the bottom substrate surface. A first current conducting terminal of a transistor is electrically coupled to the first conductive feature. Second and third conductive features may be coupled to other regions of the bottom substrate surface. A first filter circuit includes an inductor formed over a portion of the top substrate surface that is directly opposite the conductor-less region. The first filter circuit may be electrically coupled between a second current conducting terminal of the transistor and the second conductive feature. A second filter circuit may be electrically coupled between a control terminal of the transistor and the third conductive feature. Conductive leads may be coupled to the second and third conductive features, or the second and third conductive features may be coupled to a printed circuit board.

An amplifier circuit (AC) for amplifying an output signal (OS) of a capacitive sensor (M) comprises a first input terminal (AIN) to receive the output signal (OS) of the capacitive sensor (M) and a second input terminal (BIN) to receive a bias voltage (Vbias) of the capacitive sensor (M). The amplifier circuit (AC) comprises an amplifier (A) for amplifying the output signal (OS) and a control circuit (CF) arranged in a feedback loop (FL) of the amplifier (A) being configured to control a DC voltage level at an input connection (A1) of the amplifier (A). A bias voltage sensing circuit (BVS) senses a change of the level of the bias voltage (Vbias) at the second input terminal (BIN) and changes the bandwidth of the feedback loop (FL) in dependence on the sensed change of the level of the bias voltage (Vbias).

Methods and devices used in mobile receiver front end to support multiple paths and multiple frequency bands are described. The presented devices and methods provide benefits of scalability, frequency band agility, as well as size reduction by using one low noise amplifier per simultaneous outputs. Based on the disclosed teachings, variable gain amplification of multiband signals is also presented.

A transistor circuit includes a transistor having a gate terminal and first and second conduction terminals, a first circuit configured to convert an AC input signal of the transistor circuit to a gate bias voltage and to apply the gate bias voltage to the gate terminal of the transistor, a second circuit configured to convert the AC input signal of the transistor circuit to a control voltage, and a switching circuit configured to apply a first voltage to the first conduction terminal of the transistor in response to the control voltage.

A power amplifier includes a two-dimensional matrix of NM active cells formed by stacking main terminals of multiple active cells in series. The stacks are coupled in parallel to form the two-dimensional matrix. The power amplifier includes a driver structure to coordinate the driving of the active cells so that the effective output power of the two-dimensional matrix is approximately NM the output power of each of the active cells.

The present disclosure relates to a power amplifier (PA) system provided in a semiconductor device and having feed forward gain control. The PA system comprises a transmit path and control circuitry. The transmit path is configured to amplify an input radio frequency (RF) signal and comprises a first tank circuit and a PA stage. The control circuitry is configured to detect a power level associated with the input RF signal and control a first bias signal provided to the PA stage based on a first function of the power level and control a quality factor (Q) of the first tank circuit based on a second function of the power level.