The present disclosure discloses a gate voltage control circuit of an IGBT and a control method thereof. The gate voltage control circuit of the IGBT comprises a voltage control circuit, an active clamping circuit and a power amplifier circuit. A control voltage outputted by the voltage control circuit indirectly controls a gate voltage of the IGBT, so as to achieve a better control of the gate voltage of the IGBT with a smaller loss. It may prevent the active clamping circuit from a too-early response and may increase the active clamping circuit response speed; and may avoid the voltage oscillation of the collector-emitter voltage Vce and the gate voltage Vge, and may improve the reliability of the IGBTs connected in series.

One embodiment is an apparatus including a detector circuit electrically coupled between a signal source and a second circuit, the signal source generating a first signal, the detector circuit detecting a level of the first signal and generating a first control signal when the detected level of the first signal exceeds a first threshold value, and a clamping switch electrically coupled to receive the first control signal from the detector circuit, the clamping switch including a multi-terminal active device. The first control signal controls a state of the clamping switch such that the clamping switch clamps a level of a signal applied to the second circuit when the level of the first signal exceeds the first threshold value.

A linear amplifier is provided to have higher efficiency for an envelope tracking modulator. In one embodiment, a first stage amplifier circuit can be simply operated in a high gain mode or a high bandwidth mode for different applications, without using large chip area. In another embodiment, an output stage has a cascode structure whose dynamic range is controlled according to a voltage level of a supply voltage, to make a core device within the output stage have better protection and suitable dynamic range.

Base station antennas utilize RF transmitters and receivers, which operate with enhanced bias control to achieve very high speed switching during TDD operation. A radio frequency communication circuit for TDD includes a transmit/receive amplifier (e.g., MMIC) having first and second input terminals, which are responsive to a bias control voltage and radio frequency input signal. A bias control circuit is provided, which is electrically coupled to the first input terminal and a current receiving terminal of the transmit/receive amplifier. The bias control circuit includes a closed-loop feedback path between the current receiving terminal and the first input terminal, which is configured to regulate a magnitude of the bias control voltage with high precision to thereby achieve a substantially constant quiescent bias current at the current receiving terminal when the transmit/receive amplifier is enabled.

Devices, systems and methods for clamping output voltages of op-amps while minimizing post-clamping recovery delays are described. A circuit, which controls transitions between two operating modes, may include a first comparator for comparing an output voltage with a clamping voltage and outputting a first mode signal, a second comparator for comparing an input voltage with a reference voltage and outputting a second mode signal. A first logic component may receive the mode signals, perform a logical operation, and output a logic signal. A duplex output, based on a value of the logic signal, may output a track signal and an inversely corresponding hold signal, such track and hold signals being used by an op-amp circuit to configure adjusting blocks used to control transients during mode transitions.

One embodiment is an apparatus including a detector circuit electrically coupled between a signal source and a second circuit, the signal source generating a first signal, the detector circuit detecting a level of the first signal and generating a first control signal when the detected level of the first signal exceeds a first threshold value, and a clamping switch electrically coupled to receive the first control signal from the detector circuit, the clamping switch including a multi-terminal active device. The first control signal controls a state of the clamping switch such that the clamping switch clamps a level of a signal applied to the second circuit when the level of the first signal exceeds the first threshold value.

Base station antennas utilize RF transmitters and receivers, which operate with enhanced bias control to achieve very high speed switching during TDD operation. A radio frequency communication circuit for TDD includes a transmit/receive amplifier (e.g., MMIC) having first and second input terminals, which are responsive to a bias control voltage and radio frequency input signal. A bias control circuit is provided, which is electrically coupled to the first input terminal and a current receiving terminal of the transmit/receive amplifier. The bias control circuit includes a closed-loop feedback path between the current receiving terminal and the first input terminal, which is configured to regulate a magnitude of the bias control voltage with high precision to thereby achieve a substantially constant quiescent bias current at the current receiving terminal when the transmit/receive amplifier is enabled.

An automated testing system comprises a high side switch circuit coupled to an input/output (I/O) connection, a low side switch circuit coupled to the I/O connection, a high side force amplifier (HFA) coupled to the high side switch, a low side force amplifier (LFA) coupled to the low side switch, an adjusting circuit coupled to the HFA and the LFA, and a control circuit configured to change the adjusting circuit to change control of current at the I/O connection from one of the HFA or LFA to the other of the HFA or LFA.

An output stage of an operational amplifier includes a low voltage (LV) metal oxide semiconductor (MOS) device and a dynamic current limit circuit. An output current of the operational amplifier flows through the LV MOS device. The dynamic current limit circuit is configured to sense a drain voltage of the LV MOS device and increase a clamping voltage for the LV MOS device when the drain voltage of the LV MOS device is less than a threshold voltage.

One embodiment is an apparatus including a detector circuit electrically coupled between a signal source and a second circuit, the signal source generating a first signal, the detector circuit detecting a level of the first signal and generating a first control signal when the detected level of the first signal exceeds a first threshold value, and a clamping switch electrically coupled to receive the first control signal from the detector circuit, the clamping switch including a multi-terminal active device. The first control signal controls a state of the clamping switch such that the clamping switch clamps a level of a signal applied to the second circuit when the level of the first signal exceeds the first threshold value.