The invention relates to a signal amplifier circuit for amplifying a signal, in particular an audio amplifier circuit, includes at least one first amplifier transistor (Q1) and at least one second amplifier transistor (Q2), wherein the first amplifier transistor (Q1) and the second amplifier transistor (Q2) are connected to one another in a push-pull circuit and are fed by an amplifier voltage source (V+, V−); and one or more bias diodes (D1, D2) thermally coupled in each case to an associated amplifier transistor (Q1, Q2), wherein the bias diodes (D1, D2) are arranged in a parallel connection with respect to the amplifying transistors (Q1, Q2) to reduce or avoid a crossover distortion, wherein the bias diodes (D1, D2) are fed at least partly by a voltage source (UA) which is independent of the amplifier voltage source (V+, V−). The invention furthermore relates to a system and a voltage converter for providing an output-side DC voltage, including a first transformer (T1) and a second transformer (T2) connected to the first transformer (T1).

A device includes an amplifier for amplifying and supplying a high frequency power supplied to a load, a parameter detector for detecting a parameter of a current, a voltage, or a power from the amplifier to the load, a current supply unit for supplying a driving current for the amplifier, and an output unit for outputting a command signal for changing an amplification degree of the amplifier based on the detected parameter such that the parameter becomes a target value. The device further includes a first abnormality detector for detecting an abnormality by monitoring the command signal, and/or a current detector for detecting the driving current, a current data storage unit storing an upper and a lower limit value of the driving current, and a second abnormality detector for detecting the abnormality based on at least one of the upper limit value or the lower limit value.

A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier configured to amplify a transmission signal; a first circuit component; and a power amplifier (PA) control circuit configured to control the power amplifier. The power amplifier and the PA control circuit are stacked on the first principal surface, and the first circuit component is disposed on the second principal surface.

An amplifier has a first amplifying circuit configured to receive a voltage input and to output an amplified current, a second amplifying circuit configured to receive the amplified current and to output an amplified voltage, the second amplifying circuit comprising a pair of feedback resistive elements, each feedback resistive element being coupled to a gate and drain of a corresponding transistor in a pair of output transistors in the second amplifying circuit, and a feedback circuit configured to provide a negative feedback loop between an input and an output of the pair of output transistors, the feedback circuit including a first transconductance amplification circuit and a first equalizing circuit.

A potentiostat circuit for controlling a work electrode voltage and for measuring a work electrode current is disclosed. The disclosed potentiostat circuit implementations have a topology and include elements to provide a plurality of benefits. The plurality of benefits includes an enlarged range of controllable work electrode voltages and bidirectional work electrode current measurements, high immunity from temperatures variations and process mismatch. The disclosed potentiostat circuit implementations can be used in applications requiring accuracy, low power consumption, and small size. The applications can include portable and/or multichannel electrochemical applications.

A power amplifier including a cascode output stage, a bias circuit, and a temperature compensation and bias boost circuit. The cascode output stage has an input and an output and includes first and second transistors connected in series. A base of the first transistor is coupled to the input, an emitter of the first transistor is coupled to a reference potential, a collector of the first transistor is coupled to an emitter of the second transistor, and a collector of the second transistor is coupled to a supply voltage and the output. The bias circuit is coupled to the base of the second transistor. The bias boost circuit is coupled to the base of the first transistor, compensates for changes in temperature of the cascode output stage, and increases a bias current provided to the first transistor responsive to an increase in the temperature of the cascode output stage.

A circuit comprises an amplifier network including a first amplifier and a second amplifier and a first transistor having a first base. The first transistor is thermally isolated from the second amplifier. The circuit further comprises a second transistor having a second base. The second transistor is thermally linked to the second amplifier. The circuit further comprises coupling circuitry configured to couple the first base to the second base.

There is provided a device that includes a MOS transistor and a bias circuit coupled to the MOS transistor. The bias circuit is configured to bias the MOS transistor thereby maintaining the MOS transistor outside of saturation. The MOS transistor is configured to operate as a buffer or an amplifier, while being outside of saturation.

A sensor interface includes a signal path configured to receive a sensing element output signal from a sensing element and to generate an interface output signal indicative of a parameter sensed by the sensing element, an NTC interface and a diode interface. The NTC interface is configured to be coupled to an NTC element having a non-linear resistance over temperature and to generate an NTC signal indicative of a linearized version of the non-linear resistance of the NTC element and the diode interface configured to be coupled to a diode and to generate a diode signal indicative of an absolute temperature.

An open loop process and temperature independent bias circuit for stacked device amplifiers is disclosed herein. In one or more embodiments, a method for biasing a stacked high-voltage signal amplifier with a voltage divider bias module comprises generating, by the voltage divider bias module from a power supply voltage (VDD), a plurality of control voltage biases, which comprise a plurality of voltage references plus an offset voltage term (Vtemp). In one or more embodiments, the plurality of voltage references are each proportional to a division of the power supply voltage (VDD), and the offset voltage term (Vtemp) is proportional to temperature and is a function of process variation. The method further comprises biasing, a plurality of devices of the stacked high-voltage signal amplifier, with the control voltage biases.