Radio Frequency (RF) amplifier design with RFIC suffers gain variations from gain variations due to wafer process variations, temperature changes, and supply voltage changes. Three methods are proposed to achieve constant amplifier gain, either through on-chip wafer calibration, or self-calibration. Through automatic adjustment of amplifier bias current, the proposed methods maintain constant amplifier gain over process, temperature, supply voltage variations. Under the proposed Method 1, a constant transconductance Gm with enhanced gain accuracy is maintained via wafer calibration. Under the proposed Method 2, a constant transconductance Gm is maintained by time-domain averaging through different transistors. Under the proposed Method 3, a constant Gm*R or RF gain is maintained considering the impedance of a matching network of the RF amplifier.

Embodiments of a method and a device are disclosed. In an embodiment, a method for operating a bias controller for an amplifier circuit involves obtaining temperature data corresponding to a temperature of the amplifier circuit, generating a proportional to absolute temperature (PTAT) bias voltage based on a first PTAT slope when the temperature is within a first range of temperatures or a second PTAT slope when the temperature is within a second range of temperatures, wherein the second PTAT slope is greater than the first PTAT slope, and biasing the amplifier circuit based on the generated PTAT bias voltage.

A device having device function circuitry configured to receive a device signal and output a modified device signal is disclosed. The device includes a device temperature sensor configured to generate a device temperature signal that is proportional to a temperature of the device function circuitry. The device function circuitry is further configured to maintain power dissipation of the device function circuitry to below a predetermined safe power dissipation level in response to a control signal that is generated based upon the device temperature signal.

An integrated cinema amplifier comprises a power supply stage that distributes power over a plurality of channels for rendering immersive audio content in a surround sound listening environment. The amplifier automatically detects maximum and net power availability and requirements based on audio content by decoding audio metadata and dynamically adjusts gains to each channel or sets of channels based on content and operational/environmental conditions. A power supply stage provides power to drive a plurality of channels corresponding to speaker feeds to a plurality of speakers. The amplifier has a front panel having an LED array with each LED associated with a respective channel or group of channels of the multi-channel amplifier, and a control unit configured to light the LEDs according to display patterns based on operating status or error conditions of the amplifier.

Radio frequency amplifier (200) assembly with effective prevention of RF interference. The radio frequency amplifier comprises an electrically conductive housing (301) that defines an enclosed interior of the radio frequency amplifier assembly, an electrically conductive cooling plate (415) disposed inside the electrically conductive housing and having a first side and an opposite second side, the electrically conductive cooling plate being configured to divide the enclosed interior into a first enclosed region (501) and a second enclosed region (503), and a radio frequency signal processing circuit board (223) equipped with a radio frequency signal processing circuit, the radio frequency signal processing circuit board being positioned in the first enclosed region and disposed on the first side of the electrically conductive cooling plate, and a power supply module and a controller module positioned in the second enclosed region and disposed on the opposite second side of the electrically conductive cooling plate.

An amplifier module includes a module substrate with a mounting surface, a signal conducting layer, a ground layer, and a ground terminal pad at the mounting surface. A thermal dissipation structure extends through the module substrate. A ground contact of a power transistor die is coupled to a surface of the thermal dissipation structure. Encapsulant material covers the mounting surface of the module substrate and the power transistor die, and a surface of the encapsulant material defines a contact surface of the amplifier module. A ground terminal is embedded within the encapsulant material. The ground terminal has a proximal end coupled to the ground terminal pad, and a distal end exposed at the contact surface. The ground terminal is electrically coupled to the ground contact of the power transistor die through the ground terminal pad, the ground layer of the module substrate, and the thermal dissipation structure.

A current steering comparator includes an amplifier circuit, a bias circuit, a latch circuit, and a detector circuit. The amplifier circuit is configured to compare a first input signal with a second input signal during a comparison phase, in order to output a first signal and a second signal. The bias circuit is configured to utilize a tunable capacitor to bias the amplifier circuit during the comparison phase. The latch circuit is configured to generate a first output signal and a second output signal according to the first signal and the second signal during the comparison phase. The detector circuit is configured to detect the first output signal and the second output signal according to a predetermined clock signal to generate a control signal, in order to adjust the tunable capacitor.

A second member is joined in surface contact with a first surface of a first member including a semiconductor region made from an elemental semiconductor. The second member includes a radio-frequency amplifier circuit made from a compound semiconductor. A conductive protrusion projects from the second member toward a side opposite to the first member. The first member includes a temperature measurement element that detects a temperature.

A capacitance sensor circuit is provided, including: a capacitance variable capacitor changing from a first capacitance to a second capacitance corresponding to environmental change; a reference capacitor; and an amplifier circuit charging the capacitance variable capacitor via a first node and the reference capacitor via a second node, and outputting a determination signal. In the amplifier circuit, a differential amplification part generates a potential difference signal obtained by amplifying the potential difference between the first and the second nodes; an output part outputs the determination signal based on the potential difference signal; and when the difference between the increase degrees of the potentials of the first and the second nodes is less than a predetermined value, the output part holds and outputs the determination signal immediately before that state and a bias control part stops a current flowing through the differential amplification part.

A power amplification device includes: a first semiconductor chip including a first main surface and a second main surface; a first field-effect transistor, a first drain finger part, a plurality of first gate finger parts, and a source finger part; a sub-mount substrate including a third main surface and a fourth main surface; and a first filled via provided penetrating from the third main surface to the fourth main surface. In plan view, the first filled via has a rectangular shape. A long side direction of the first filled via is parallel to a long side direction of the plurality of first gate finger parts. In plan view, the first filled via is positioned to overlap part of one first gate finger part included in the plurality of first gate finger parts.