An electronic device may include wireless circuitry with a baseband processor, a transceiver circuit, a front-end module, and an antenna. The front-end module may include amplifier circuitry such as a low noise amplifier for amplifying received radio-frequency signals. The amplifier circuitry is operable in a non-carrier-aggregation mode and a carrier aggregation mode. The amplifier circuitry may include an input transformer that is coupled to multiple amplifier stages such as a common gate amplifier stage, a cascode amplifier stage, and a common source amplifier stage. The common gate amplifier stage may include switches for selectively activating a set of cross-coupled capacitors to help maintain input impedance matching in the non-carrier-aggregation mode and the carrier-aggregation mode. The common source amplifier stage may include additional switches for activating and deactivating the common source amplifier stage to help maintain the gain in the non-carrier-aggregation mode and the carrier-aggregation mode.

An outphasing amplifier includes a first class-E power amplifier having an output coupled to a first conductor and an input receiving a first RF drive signal. A first reactive element is coupled between the first conductor and a second conductor. A second reactive element is coupled between the second conductor and a third conductor. A second class-E power amplifier includes an output coupled to a fourth conductor and an input coupled to a second RF drive signal, a third reactive element coupled between the second and fourth conductors. Outputs of the first and second power amplifiers are combined by the first, second and third reactive elements to produce an output current in a load. An efficiency enhancement circuit is coupled between the first and fourth conductors to improve power efficiency at back-off power levels. Power enhancement circuits are coupled to the first and fourth conductors, respectively.

Systems and method for improving operation of a radio frequency system are provided. One embodiment includes a switching power amplifier that outputs an amplified analog electrical signal based on an input electrical signal and voltage of an envelope voltage supply rail. The switching power amplifier includes a first transistor with a gate that receives the input electrical signal, a source electrically coupled to the envelope voltage supply rail, and a drain electrically coupled to an output of the switching power amplifier; a second transistor with a gate that receives the input electrical signal, a source electrically coupled to ground, and a drain electrically coupled to the output; and a third transistor with a gate that receives the input electrical signal, a drain electrically coupled to the envelope voltage supply rail, and a source electrically coupled to an output of another switching power amplifier.

A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors. The plurality of unit transistors are arranged in a first direction. The bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction. The emitter of at least one of the plurality of unit transistors is displaced from a center line of the bump in the first direction toward a first side of a second direction which is perpendicular to the first direction. The emitter of at least another one of the plurality of unit transistors is displaced from the center line of the bump in the first direction toward a second side of the second direction.

A flip chip circuit comprising: a semiconductor substrate; a power amplifier provided on the semiconductor substrate; and a metal pad configured to receive an electrically conductive bump for connecting the flip chip to external circuitry. At least a portion of the power amplifier is positioned directly between the metal pad and the semiconductor substrate.

A biased-transistor-module comprising: a module-input-terminal; a module-output-terminal; a reference-terminal; a module-supply-terminal configured to receive a supply voltage; a module-reference-voltage-terminal configured to receive a module reference voltage; a main-transistor having a main-control-terminal, a main-first-conduction-channel-terminal and a main-second-conduction-channel-terminal, wherein the main-first-conduction-channel-terminal is connected to the module-output-terminal, and the main-second-conduction-channel-terminal is connected to the reference-terminal, and the main-control-terminal is connected to an input-signal-node, wherein the input-signal-node is connected to the module-input-terminal; and a bias-circuit. The bias-circuit comprises: a first-bias-transistor; a first-bias-resistor; a second-bias-transistor; and a second-bias-resistor.

A semiconductor device is provided with one or more gate fingers (20) that are provided in an active region on a semiconductor substrate (1), and a source finger (30) and a drain finger (40) that are provided in the active region and arranged alternately to allow each gate finger to be sandwiched between the source and drain fingers. The semiconductor device includes terminal circuit (60) that has inductive impedance at the frequency of a signal input to an input terminal of the one or more gate fingers, and is directly or indirectly connected to the one or more gate fingers at an area being spaced away from a connecting position of the input terminal (21a) of the one or more gate fingers (20).

Circuits and operating methods thereof for correcting phase errors introduced by amplifiers employing gallium nitride (GaN) transistors are described. The phase errors are caused by trapping effects exhibited by the GaN transistors. The circuits described herein pre-distort the phase of the input signal to compensate for the phase error introduced by the amplifier. Thereby, the phase of the output signal of the amplifier has a reduced phase error. For example, the output signal may have a near zero (or zero) phase error.

Provided is a bias circuit that supplies a first bias current or voltage to an amplifier that amplifies a radio frequency signal. The bias circuit includes: an FET that has a power supply voltage supplied to a drain thereof and that outputs the first bias current or voltage from a source thereof; a first bipolar transistor that has a collector thereof connected to a gate of the FET, that has a base thereof connected to the source of the FET, that has a common emitter and that has a constant current supplied to the collector thereof; and a first capacitor that has one end thereof connected to the collector of the first bipolar transistor and that suppresses variations in a collector voltage of the first bipolar transistor.

An electronically scanned antenna comprising a travelling wave guiding structure having a bottom conductor and a top conductor developing each along a first direction, the top conductor comprising a plurality of first conductive patches arranged periodically along said first direction and connected in series by tuning circuits; the electronically scanned antenna further comprising a plurality of amplifiers arranged for compensating resistive and radiation losses along the length of the travelling wave guiding structure.