A Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and first and second peaking amplifier dies. The RF signal splitter divides an input RF signal into first, second, and third input RF signals, and conveys the input RF signals to splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier dies each include one or more additional power transistors configured to amplify, along first and second peaking signal paths, the second and third input RF signals to produce amplified second and third RF signals. The dies are coupled to the substrate so that the RF signal paths through the carrier and one or more of the peaking amplifier dies extend in substantially different (e.g., orthogonal) directions.

Apparatus and methods for an inverted Doherty amplifier operating at gigahertz frequencies are described. RF fractional bandwidth and signal bandwidth may be increased over a conventional Doherty amplifier configuration when impedance-matching components and an impedance inverter in an output network of the inverted Doherty amplifier are designed based on characteristics of the main and peaking amplifier and asymmetry factor of the amplifier.

Apparatus and methods for an inverted Doherty amplifier operating at gigahertz frequencies are described. RF fractional bandwidth and signal bandwidth may be increased over a conventional Doherty amplifier configuration when impedance-matching components and an impedance inverter in an output network of the inverted Doherty amplifier are designed based on characteristics of the main and peaking amplifier and asymmetry factor of the amplifier.

A radio frequency power amplifier and a device are disclosed. A first microstrip line and a second microstrip line are coupled, one end of the second microstrip line is an open stub and another end of the second microstrip line is grounded; and the first microstrip line having a first width is connected to a first transmission line having a second width which is wider than the first width. Therefore, some harmonic bands suppression can be implemented independently. Furthermore, the harmonic termination is independent and may not impact one or more fundamental components during matching a network. In addition, it may not take up more space and is sufficiently compact. Furthermore, sufficient wide harmonic response bandwidth can be provided.

Apparatus and methods for an inverted Doherty amplifier operating at gigahertz frequencies are described. RF fractional bandwidth and signal bandwidth may be increased over a conventional Doherty amplifier configuration when impedance-matching components and an impedance inverter in an output network of the inverted Doherty amplifier are designed based on characteristics of the main and peaking amplifier and asymmetry factor of the amplifier.

CRLH lines including left-handed shunt inductors and left-handed series capacitors are provided on gate side transmission lines of a plurality of FETs.

Systems and methods for communicating electromagnetic signals and/or power and, more particularly for example, to power combiners and similar systems and methods for communicating electromagnetic signals and/or power generated by amplifiers to loads, are described herein. In at least example embodiment, a power amplifier system includes first and second amplifier circuits and a power combiner circuit coupled to each of the first and second amplifier circuits and having a first microstrip transmission line component, a slotline formation, and an additional coupling component that is capable of being at least indirectly coupled to a load, where the first microstrip transmission line component and additional coupling component are electromagnetically coupled by way of the slotline formation.

Apparatus and methods for a no-load-modulation power amplifier are described. No-load-modulation power amplifiers can comprise multiple amplifiers connected in parallel to amplify a signal that has been divided into parallel circuit branches. One of the amplifiers can operate as a main amplifier in a first amplification class and the remaining amplifiers can operate as peaking amplifiers in a second amplification class. The main amplifier can see essentially no modulation of its load between the power amplifier's fully-on and fully backed-off states. The power amplifiers can operate in symmetric and asymmetric modes. Improvements in bandwidth and drain efficiency over conventional Doherty amplifiers are obtained. Further improvements can be obtained by combining signals from the amplifiers with hybrid couplers.

A Doherty power amplifier and a device are disclosed. In a combiner of the Doherty power amplifier, a first input port and a termination port are open coupled by at least two coupled microstrip lines and/or a second input port and an output port are open coupled by at least two coupled microstrip lines. Therefore, a balanced amplitude bandwidth may be obtained and may be much broader than that of the existing solutions, in addition, a controllable size or a potentially small size may be realized. Furthermore, the Doherty power amplifier in this disclosure may provide large 2.sup.nd harmonic suppression to meet product spectrum mask requirements.

The present invention relates to a four-way Doherty amplifier. The invention further relates to a mobile telecommunications base station. The invention proposes a new Doherty combiner topology that allows peak efficiencies to be reached at deeper back-off levels than conventional Doherty combiners.