An envelope detection circuit and methods for detecting an envelope of a signal using such an envelope detection circuit. One example envelope detection circuit generally includes a first diode, a capacitive element, and a clamping circuit. The first diode has an anode coupled to an input node of the envelope detection circuit and has a cathode coupled to an output node of the envelope detection circuit. The capacitive element is coupled in shunt between the output node and a reference potential node, and the clamping circuit is coupled in shunt between the input node and the reference potential node. The clamping circuit generally includes a resistive element coupled in series with a second diode.

Apparatus and methods for radio frequency (RF) signal limiting are provided. In certain embodiments, an RF signal limiting system includes a cascade of a front limiter and a biased limiter. Additionally, the front limiter provides an initial amount of limiting to an RF signal, while the biased limiter serves to further limit the RF signal. The biased limiter is adaptively biased such that the amount of limiting provided to the RF signal increases in response to an increase in the RF signal level. Such an RF signal limiting system can be used in a variety of applications, including protecting an input of a low noise amplifier (LNA).

A semiconductor device capable of measuring a minute current is provided. The semiconductor device includes an operational amplifier and a diode element. An inverting input terminal of the operational amplifier and an input terminal of the diode element are electrically connected to a first terminal to which current is input, and an output terminal of the operational amplifier and an output terminal of the diode element are electrically connected to a second terminal from which voltage is output. A diode-connected transistor that includes a metal oxide in a channel formation region is used as the diode element. Since the off-state current of the transistor is extremely low, a minute current can flow between the first terminal and the second terminal. Thus, when voltage is output from the second terminal, a minute current that flows through the first terminal can be estimated from the voltage.

A first inductor is connected to an input terminal through a capacitive element. To the first inductor, an anti-parallel diode pair including a first diode and a second diode, and a second inductor are connected. The first inductor and the anti-parallel diode pair are coupled to each other by an electromagnetic field, thereby forming a coupling capacitance.

A first inductor is connected to an input terminal through a capacitive element. To the first inductor, an anti-parallel diode pair including a first diode and a second diode, and a second inductor are connected. The first inductor and the anti-parallel diode pair are coupled to each other by an electromagnetic field, thereby forming a coupling capacitance.

A method of testing a PIN diode for a power limiter circuit comprises measuring a reverse bias current of the PIN diode; applying a reverse bias voltage to the PIN diode; increasing the reverse bias voltage until the reverse bias current of the PIN diode reaches a threshold current indicative of a reverse voltage breakdown; and determining whether the reverse bias breakdown voltage of the PIN diode is within an acceptable range of reverse bias breakdown voltages corresponding to a power range at which the power limiter circuit would enter power limiting mode with the PIN diode.

A method of testing a PIN diode for a power limiter circuit comprises measuring a reverse bias current of the PIN diode; applying a reverse bias voltage to the PIN diode; increasing the reverse bias voltage until the reverse bias current of the PIN diode reaches a threshold current indicative of a reverse voltage breakdown; and determining whether the reverse bias breakdown voltage of the PIN diode is within an acceptable range of reverse bias breakdown voltages corresponding to a power range at which the power limiter circuit would enter power limiting mode with the PIN diode.

A number of diode limiter semiconductor structures are described. The diode limiters can include a hybrid arrangement of diodes with different intrinsic regions, all formed over the same semiconductor substrate. In one example, a diode limiter includes a first diode having a first doped region formed to a first depth into an intrinsic layer of a semiconductor structure, a second diode having a second doped region formed to a second depth into the intrinsic layer of the semiconductor structure, and at least one passive component. The first diode includes a first effective intrinsic region of a first thickness, the second diode includes a second effective intrinsic region of a second thickness. The first thickness is greater than the second thickness. The passive component is over the intrinsic layer and electrically coupled as part of the diode limiter.

A switch element is arranged between an input terminal and an output terminal. A signal from the input terminal is distributed by a capacitative element and supplied to the cathode side of a diode. An inductor is connected to the cathode side of the diode, and a smoothing circuit including a capacitative element and a resistor is connected to the anode side. The switch element has a control terminal connected to the anode of the diode, and turns off a path between the input terminal and the output terminal when a voltage is applied to the control terminal.

A clamping circuit that may be used to provide efficient and effective voltage clamping in an RF front end. The clamping circuit comprises two series coupled signal path switches and a bypass switch coupled in parallel with the series coupled signal path switches. A diode is coupled from a point between the series coupled signal path switches to a reference potential. In addition, an output selection switch within an RF front end has integrated voltage clamping to more effectively clamp the output voltage from the RF front end. Additional output clamping circuits can be used at various places along a direct gain signal path, along an attenuated gain path and along a bypass path.