Embodiments of a Surface Acoustic Wave (SAW) device and methods of fabrication thereof are disclosed. In some embodiments, a SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate, wherein a thickness of the piezoelectric layer is less than twice a transducer electrode period of the at least one interdigitated transducer. Using the piezoelectric layer on the carrier substrate suppresses acoustic radiation into the bulk, thereby improving the performance of the SAW device. Further, by utilizing quartz for the carrier substrate, additional advantages of small viscous losses, small permittivity, and small thermal sensitivity are achieved. Still further, as compared to Silicon, the use of quartz for the carrier substrate eliminates resistive losses.

Embodiments of a Surface Acoustic Wave (SAW) device and methods of fabrication thereof are disclosed. In some embodiments, a SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate, wherein a thickness of the piezoelectric layer is less than twice a transducer electrode period of the at least one interdigitated transducer. Using the piezoelectric layer on the carrier substrate suppresses acoustic radiation into the bulk, thereby improving the performance of the SAW device. Further, by utilizing quartz for the carrier substrate, additional advantages of small viscous losses, small permittivity, and small thermal sensitivity are achieved. Still further, as compared to Silicon, the use of quartz for the carrier substrate eliminates resistive losses.

A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.

The invention relates to a covering (1) for an electronic component (e.g. of the MEMS, BAW, or SAW type). The covering comprises at least one layer (5, 6, 7) having a structure (19, 20, 21) with a number of prominences (8, 9, 15) and/or depressions (10, 11, 16). The invention furthermore relates to a method for producing a covering (1) of this type.

The invention relates to a covering (1) for an electronic component (e.g. of the MEMS, BAW, or SAW type). The covering comprises at least one layer (5, 6, 7) having a structure (19, 20, 21) with a number of prominences (8, 9, 15) and/or depressions (10, 11, 16). The invention furthermore relates to a method for producing a covering (1) of this type.

A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing methods are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and the second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film in this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

A resonance device is provided that includes a lower cover; an upper cover coupled to the lower cover; and a resonator that has vibration arms that generate bending vibration in an interior space provided between the lower cover and the upper cover. Moreover, the vibration arms have distal ends provided with metal films on a side that faces the upper cover, and a gap is provided between the distal ends of the vibration arms and the upper cover that is larger than a gap between the distal ends of the vibration arms and the lower cover.

A wafer-level package for micro-acoustic devices and a method of manufacture is provided. The package comprises a base wafer with electric device structures. A frame structure is sitting on top of the base wafer enclosing particular device areas for the micro-acoustic devices. A cap wafer provided with a thin polymer coating is bonded to the frame structure to form a closed cavity over each device area and to enclose within the cavity the device structures arranged on the respective device area.

A wafer-level package for micro-acoustic devices and a method of manufacture is provided. The package comprises a base wafer with electric device structures. A frame structure is sitting on top of the base wafer enclosing particular device areas for the micro-acoustic devices. A cap wafer provided with a thin polymer coating is bonded to the frame structure to form a closed cavity over each device area and to enclose within the cavity the device structures arranged on the respective device area.

A crystal device includes a bearing base, an integrated chip and a conductive adhesive unit. The bearing base includes a conductive seat. The integrated chip includes a principal reference plane facing the conductive seat, and having a first major axis. The conductive adhesive unit has a second major axis and an aspect ratio, and is at least partly disposed between the conductive seat and the integrated chip. The aspect ratio ranges from 1.1 to 1.9. The principal reference plane further has a perpendicular projection straight line defined according to the second major axis. A practical angle is included by the first perpendicular projection straight line and the first major axis, and ranges from 0 degree to 90 degrees.